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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Electrical Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
摘要： We present a comprehensive description of electrical properties of vertical-cavity surface-emitting lasers (VCSELs) based on a drift-diffusion model applied to carrier transport in 3D multilayer semiconductor laser heterostructure with a p-n junction. We address the impact of interface grading in distributed Bragg reflectors (DBRs), modulation doping of the DBRs and surrounding layers of the quantum well (QW) as well as material-dependent carrier mobilities and recombination constants and are focused on oxide-confined GaAs/AlGaAs VCSELs. We evaluate both depletion and diffusion capacitance and show that both contributions to the capacitance as well as the differential series resistance critically depend on the injection current and chip design such that, in general, VCSEL cannot be properly modeled by an equivalent circuit approximation. Current profiles demonstrate significant increase of the current density at the edges of the oxide-confined aperture (current crowding) which could be suppressed by a proper design.
关键词： current crowding,differential resistance,oxide aperture,carrier transport,capacitance,modulation frequency bandwidth,vertical cavity surface-emitting laser
更新于2025-09-12 10:27:22
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Characteristics of Micro LEDs With Snowflake p-Electrode and Composite Textured Sidewalls
摘要： We demonstrate a hybrid structure incorporating textured sidewalls and composite concave-convex circular snowflake-like p-electrode, which is an effective approach to improve optical properties without deteriorating the electrical characteristics for micro-LEDs. Compared to the device with flat sidewalls and disk p-electrode, the device with concave-convex 6-branches circular snowflake-like p-electrode exhibits a saturation light output power enhancement of 36.85%. And the forward voltage decreases by 7.6% at current density of 1732.4 A/cm2. The enhanced performances are mainly attributed to the decrease of total internal reflection at the concave-convex circular composite textured sidewalls and improvement of current distribution provided by 6-branches snowflake-like p-electrode.
关键词： Composite textured sidewalls,micro light-emitting diode,InGaN/GaN,Electrode pattern,Current crowding
更新于2025-09-11 14:15:04