Prospects of Impact Avalanche Transit-Time Diode Based on Chemical-Vapor-Deposited Diamond Substrate

摘要： We propose a chemical-vapor-deposited (CVD) diamond-based double-drift-region (DDR) impact avalanche transit-time diode (IMPATT) for use in microwave applications. CVD diamond is taken as the base substrate material. Simulations were carried out to perform direct-current (DC), small-signal, and noise analyses on the IMPATT. The results are in agreement with experimental reports. The IMPATT based on CVD diamond offers better performance compared with other materials reported to date at 26 GHz to 40 GHz. In the near future, this device could represent the best alternative for designers and semiconductor industry, due to its numerous advantages including higher DC-to-radiofrequency (RF) conversion efficiency (27.81%), highest power density (6.206 9 109 W m?2), minimum noise measure value (?98.22 dBm), and best optimized conductance–susceptance profile with lower quality factor (0.0215).