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Tuning the excitonic properties of ZnO:Sn thin films
摘要： The effects of Sn doping, deposition temperature, and post-annealing treatment on the excitonic behavior of ZnO:Sn (SZO) thin films deposited by dc-unbalanced magnetron sputtering have been studied. Sn doping induces the decrease of grain size and promotes the formation of oxygen vacancy-related trap states as indicated by A1 LO mode in Raman spectra and green emission in photoluminescence spectra. Using a critical point analysis of the dielectric functions from spectroscopic ellipsometry data analysis, Sn doping blueshifts the excitonic absorption and decreases the exciton lifetime via screening the electron-hole Coulomb interaction. By varying the deposition temperature from room temperature up to 300 °C (SZO-3), there is no change in excitonic absorption. Then, annealing of SZO-3 at 600 °C under oxygen environment (SZO-6) strongly improves the excitonic absorption as well as its lifetime. Critical point analysis on SZO-6 sample clearly reveals the excitonic transition at 3.38 eV and exciton-phonon complexes at 3.66 eV. Thus, the result is important to improve the functionality of doped ZnO with strong excitonic absorption for optoelectronic applications.
关键词： Annealing,Dc-unbalanced magnetron sputtering,Exciton,Thin films,Sn doped ZnO
更新于2025-09-23 15:23:52
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Characteristics of Vanadium Oxide Thin Films Fabricated by Unbalanced Magnetron Sputtering for Smart Window Application
摘要： Vanadium oxide (VOx) thin films were deposited by an unbalanced magnetron (UBM) sputtering system with a vanadium metal target and O2 reaction gas, and thermally treated at various annealing temperatures. In this work, the structural, electrical, and optical properties of the fabricated VOx films with various annealing temperatures were experimentally investigated. The UBM sputter grown VOx thin films exhibited amorphous structure, and had a very weak peak of V2O5 (002) owing to very thin films. However, the crystallite size of VOx films increased with increasing annealing temperature. The surface roughness of VOx films and average transmittance decreased with increasing annealing temperature. The resistivity of VOx films also decreased with increasing annealing temperature, while the electrical properties of films improved.
关键词： Transmittance,Unbalanced Magnetron Sputtering,Vanadium Oxide,Surface Roughness,Resistivity
更新于2025-09-23 15:23:52
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Plasma source based on an unbalanced magnetron sputtering system
摘要： The paper presents research results on the capabilities of an unbalanced magnetron sputtering (UMS) system with a coefficient of geometrical unbalance KG=0.3 to produce gas discharge plasma far from its target. Using argon as the working gas and silicon as the target material, it is shown that the proposed UMS system provides the generation of plasma with an ion current density of ≈ 0.2 mA/cm2 in the region of treated material at 440 mm from the Si target. The research data on the maximum power at which the UMS system produces high-density plasma without melting the Si target are also presented.
关键词： unbalanced magnetron sputtering,plasma source,ion current density,silicon target
更新于2025-09-11 14:15:04