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- 摘要
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- 实验方案
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Photothermally Assisted Thinning of Silicon Nitride Membranes for Ultrathin Asymmetric Nanopores
摘要： Sculpting solid-state materials at the nanoscale is an important step in manufacturing of numerous types of sensor devices, in particular solid-state nanopore sensors. Here we present mechanistic insight into laser-induced thinning of low-stress silicon nitride (SiNx) membranes and films. In a recent study, we observed that focusing a visible wavelength laser beam on a SiNx membrane results in efficient localized heating, and used this effect to control temperature at a solid-state nanopore sensor. A side-effect of the observed heating was that the pores expand/degrade under prolonged high-power illumination, prompting us to study the mechanism of this etching process. We find that SiNx can be etched under exposure to light of ~107 W/cm2 average intensity, with etch rates that are influenced by the supporting electrolyte. Combining this controlled etching with dielectric breakdown, an electrokinetic process for making pores, nanopores of arbitrary dimensions as small as 1-2 nm in diameter and thickness can easily be fabricated. Evidence gathered from biomolecule-pore interactions suggests that the pore geometries obtained using this method are more funnel-like, rather than hourglass-shaped. Refined control over pore dimensions can expand the range of applications of solid-state nanopores, for example, biopolymer sequencing and detection of specific biomarkers.
关键词： photothermal heating,single-molecule,dielectric breakdown,Nanopores,nanofabrication
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - Bochum, Germany (2019.7.16-2019.7.18)] 2019 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) - New approach for the simulation of bent and crumpled antennas on a flexible substrate
摘要： First-ever 28 nm embedded split-gate MONOS (SG-MONOS) ?ash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from C to 170 C as demanded strongly in automotive uses. Much attention has been paid to the degradation of the reliability characteristics along with the process shrinkage. Temperature-adjusted word-line overdrive scheme improves random read access frequency by 15% and realizes both of 6.4 GB/s read throughput by 200 MHz no-wait random access of code ?ash macros and more than ten times longer TDDB lifetime of WL drivers. Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric ?lms between metal interconnect layers by three times. TASPEC is particularly useful for a data ?ash macro with one million rewrite cycles. Source-side injection (SSI) program with negative back-bias voltage achieves 63% reduction of program pulse time and, consequently, realizes 2.0 MB/s write throughput of code ?ash macros. A spread spectrum clock generation and a clock phase shift technique are introduced for charge pump clock generation in order to suppress EMI noise due to high write throughput of code ?ash macros, and peak power of EMI noise is reduced by 19 dB.
关键词： high reliability,spread spectrum clock generation,word-line overdrive,Automotive application,split-gate MONOS(SG-MONOS),embedded ?ash memory,time dependent dielectric breakdown,high-temperature operation,Fast random read operation
更新于2025-09-23 15:19:57
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Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films
摘要： The outstanding thermal properties, mechanical properties and large optical bandgap of hexagonal boron nitride (h-BN) make it very attractive for various applications in ultrathin 2D microelectronics. However, the synthesis of large lateral size and uniform h-BN thin films with a high breakdown strength still remains a great challenge. Here, we comprehensively investigated the effect of growth conditions on the thickness of h-BN films via low pressure chemical vapor deposition (LPCVD). By optimizing the LPCVD growth parameters with electropolished Cu foils as the deposition substrates and developing customized "enclosure" quartz-boat reactors, we achieved thickness-tunable (1.50–10.30 nm) growth of h-BN thin films with a smooth surface (RMS roughness is 0.26 nm) and an ultra-large area (1.0 cm × 1.0 cm), meanwhile, the as-grown h-BN films exhibited an ultra-high breakdown strength of ~10.0 MV cm?1, which is highly promising for the development of electrically reliable 2D microelectronic devices with an ultrathin feature.
关键词： dielectric breakdown strength,h-BN,thin films,LPCVD,2D microelectronics,hexagonal boron nitride
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Computed tomography dataset analysis for stereotaxic neurosurgery navigation
摘要： First-ever 28 nm embedded split-gate MONOS (SG-MONOS) ?ash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from C to 170 C as demanded strongly in automotive uses. Much attention has been paid to the degradation of the reliability characteristics along with the process shrinkage. Temperature-adjusted word-line overdrive scheme improves random read access frequency by 15% and realizes both of 6.4 GB/s read throughput by 200 MHz no-wait random access of code ?ash macros and more than ten times longer TDDB lifetime of WL drivers. Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric ?lms between metal interconnect layers by three times. TASPEC is particularly useful for a data ?ash macro with one million rewrite cycles. Source-side injection (SSI) program with negative back-bias voltage achieves 63% reduction of program pulse time and, consequently, realizes 2.0 MB/s write throughput of code ?ash macros. A spread spectrum clock generation and a clock phase shift technique are introduced for charge pump clock generation in order to suppress EMI noise due to high write throughput of code ?ash macros, and peak power of EMI noise is reduced by 19 dB.
关键词： high-temperature operation,time dependent dielectric breakdown,Automotive application,high reliability,spread spectrum clock generation,word-line over-drive,split-gate MONOS(SG-MONOS),embedded ?ash memory,Fast random read operation
更新于2025-09-19 17:13:59
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Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique
摘要： In this paper we report the detailed analysis of the effect of in-situ annealing on the electrical properties of yttrium stabilized zirconium oxide (YSZ) thin films grown by pulsed laser deposition on silicon substrates. The optimized metal/YSZ/Si devices showed low leakage current, good dielectric strength and a breakdown field strength of 4.13 MV/cm. The magnitudes of flat band voltage, and interfacial charge density have been extracted from the capacitance-voltage (C-V) characteristics of the MOS structure. The C-V characteristics show a small hysteresis which indicates the presence of traps. The observed shift in the flat band voltage and hysteresis are explained with the help of X-ray photoelectron spectroscopy. From the XPS depth profile analysis of the samples it was found that as we go from the surface to the interface, oxygen concentration in the deposited film decreases, i.e. the oxide becomes zirconium rich. This has been correlated with the observed electrical properties.
关键词： Thin films,Interface,Dielectric breakdown,Gate dielectric,Zirconium oxide (ZrO2),Pulsed laser deposition
更新于2025-09-16 10:30:52
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An apparatus based on an atomic force microscope for implementing tip-controlled local breakdown
摘要： Solid-state nanopores are powerful tools for sensing of single biomolecules in solution. Fabrication of solid-state nanopores is still challenging, however; in particular, new methods are needed to facilitate the integration of pores with larger nanofluidic and electronic device architectures. We have developed the tip-controlled local breakdown (TCLB) approach, in which an atomic force microscope (AFM) tip is brought into contact with a silicon nitride membrane that is placed onto an electrolyte reservoir. The application of a voltage bias at the AFM tip induces a dielectric breakdown that leads to the formation of a nanopore at the tip position. In this work, we report on the details of the apparatus used to fabricate nanopores using the TCLB method, and we demonstrate the formation of nanopores with smaller, more controlled diameters using a current limiting circuit that zeroes the voltage upon pore formation. Additionally, we demonstrate the capability of TCLB to fabricate pores aligned to embedded topographical features on the membranes.
关键词： dielectric breakdown,atomic force microscope,nanopore fabrication,tip-controlled local breakdown,solid-state nanopores
更新于2025-09-12 10:27:22
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Effects of Copper Migration on the Reliability of Through-Silicon Via (TSV)
摘要： Non-destructive electrical characterization was performed to detect copper migration in a degraded through-silicon via structure after various stressing conditions such as elevated temperature exposure, temperature cycling and electrical biasing. They were performed either independently or as a combination with electrical bias for comparison. Variations in the electrical characteristics reflect the presence of copper. The electrical characteristics were also able to monitor the transport of copper ions from an applied electric field. Physical failure analysis was performed to verify the presence of migrated copper, correlating to the changes observed during electrical measurement. With this understanding, reliability assessments become possible where this paper seeks to value add to verify the influence of Cu migration on the conduction mechanism and TDDB lifetime, understanding.
关键词： Electrical characterization,Through-silicon vias,Reliability testing,Dielectric breakdown,Copper
更新于2025-09-10 09:29:36
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Streamer characteristics of dielectric natural ester-based liquids under long gap distances
摘要： Natural esters, as the renewable resources, offer excellent physiochemical and dielectric properties such as the fire-resistance, high biodegradability and satisfactory dielectric breakdown performance. Thus, natural esters are selected as the insulation and heat dissipation medium for electrical equipment. However, the electrical performance of natural esters with different structures under the long gap and higher electrical stress needs further evaluations. In this paper, streamer propagation of various natural esters under the long gap and higher electrical stress were observed optically. The influence of voltage polarity, liquid types and gap distances on streamer characteristics of natural esters were analyzed. Results show that the maximum propagation velocity of streamer in natural esters is greater than that in the hydrocarbon liquids. Breakdown voltage of natural esters under negative polarity is much higher than that under positive polarity for the same gap distance. Among all the natural esters concerned, the camellia liquid demonstrates slower streamer velocity and slight greater lightning breakdown voltages for the positive and negative polarity. The lower content of unsaturation triacylglycerol molecules in camellia liquid contributes to the inhibition of ionization and streamers propagation. Results would be valuable reference for the design, manufacture and operation of the electrical equipment filled with natural ester.
关键词： hydrocarbon liquids,streamer propagation,natural esters,dielectric breakdown,long gap distances
更新于2025-09-09 09:28:46
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Improvement of dielectric breakdown strength and energy storage performance in Er2O3–modified 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3 lead-free ceramics
摘要： In this study, 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3-x wt. % Er2O3 ceramics (SBNCTEx; x = 0-5) were synthesized using traditional solid-state method, and we investigated the microstructure, energy storage properties as well as the relationship between dielectric breakdown strength and interfacial polarization. As compared with pure 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3 ceramics, the Er2O3 dopants suppressed the grain growth of SBNCTEx, and the doped ones showed the dense microstructure. The secondary phase was found for x ≥ 1 according to the EDS results, and the influence of the secondary phase on relative dielectric breakdown strength has also been studied. The dielectric breakdown strength increased from 18.1kV/mm to 34.4 kV/mm, which is good for energy storage. The energy storage density of 0.28J/cm3 and the energy storage efficiency of 91.4% were obtained in the SBNCTE5 ceramics. The results indicate that SBNCTE ceramics can be used as energy storage capacitors.
关键词： Impedance,Er2O3 addition,Dielectric breakdown strength,Energy storage
更新于2025-09-09 09:28:46