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<i>(Invited)</i> Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review
摘要： We developed high gettering capability silicon wafers for advanced CMOS image sensors using hydrocarbon molecular ion implantation and surface activated direct wafer bonding (SAB). We found that this novel wafer has three unique characteristics for the improvement of CMOS image sensor device performance. The first is metallic impurity gettering capability in the hydrocarbon ion implantation projection range during CMOS device fabrication. The second is the oxygen out-diffusion barrier effect; this wafer can control out-diffusion to the device active region from the CZ grown silicon substrate during CMOS device heat treatment. The third is the hydrogen passivation effect; hydrogen passivates to the Si/SiO2 gate oxide interface state defects which out-diffuse to the device active region from the hydrocarbon ion implantation projection range during the CMOS device fabrication. Moreover, we demonstrated that this novel wafer can improve the pn-junction leakage current under the actual device fabrication.
关键词： CMOS image sensors,hydrocarbon molecular ion implantation,surface activated direct wafer bonding,gettering capability,oxygen out-diffusion barrier,hydrogen passivation
更新于2025-09-23 15:21:21
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Synthesis of TiN, Ti, and TiSi2 Thin Films for the Contact System of Solar Cells
摘要： The influence of deposition parameters, such as: the magnetron power in the range 690–1400 W, the silicon substrate temperature 23–170°C, the N2 gas flow rate 0.9–3.6 L/h, the Ar gas flow rate 0.06?3.6 L/h, the ratio of N2/Ar gas flows 1–60 on the thickness, the density, and the composition of the deposited films is analyzed. The maximum density 5.247 g/cm3 corresponding to the TiN0.786 = Ti56N44 composition has been achieved at the following deposition parameters: 1200 W, N/Ar = 1.8/0.06 L/h = 30, 0.8 Pa, 320 s, and 100°C. At temperatures 700–800°C, the mutual diffusion of titanium and silicon atoms through the interface leads to the active nucleation, the formation of nanocrystals and low-resistance metallization layers. X-ray diffraction shows that, during annealing at 700°C (30 min, Ar), the formation of phase TiSi2 due to the diffusion of Ti atoms into silicon is twice more intense than the formation of Ti5Si3 due to the diffusion of silicon atoms into titanium as a result of high hardness of titanium. The average sizes of TiSi2 decreases from 7.1 to 5.6 nm at 750°C due to the crystallization of the nuclei and increase to 9.2 nm at 800°C.
关键词： solar cell,diffusion barrier,titanium,silicon,titanium nitride
更新于2025-09-19 17:13:59
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Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation
摘要： An amorphous Si (a-Si) solar cell with a back reflector composed of zinc oxide (ZnO) and silver (Ag) is potentially the most plausible and flexible solar cell if a graphite sheet is used as the substrate. Graphite supplies lightness, conductivity and flexibility to devices. When a graphite sheet is used as the substrate, carbon can diffuse into the Ag layer in the subsequent p-i-n process at 200–400 °C. To prevent this, we added an oxide layer as a carbon diffusion barrier between the carbon substrate and the back reflector. For the carbon diffusion barrier, silicon oxide (SiO2) or tin oxide (SnOx) was used. We evaluated the thermal stability of the back reflector of a carbon substrate using secondary-ion mass spectrometry (SIMS) to analyze the carbon diffusion barrier material. We confirmed the deposition characteristics, reflectance and prevention of carbon diffusion with and without the barrier. Finally, the structures were incorporated into the solar cell and their performances compared. The results showed that the back reflectors that were connected to a carbon diffusion barrier presented better performance, and the reflector with an SnOx layer presented the best performance.
关键词： flexible device,carbon diffusion barrier,a-Si solar cell,carbon substrate,graphite sheet
更新于2025-09-16 10:30:52
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Optimization of a rear system based on Titanium Nitride for a flexible CuInSe2 solar cell
摘要： Flexible thin film solar cells represent the future. This study concentrates on making CuInSe2 based solar cells non rigid by depositing the rear molybdenum contact onto inox 316. In order to overcome the Inox316 disadvantages such as the metallic impurities diffusion and the surface roughness, a bi-layer TiN/Ti have been introduced between the Mo rear contact and Inox 316. Two techniques have been employed: spray pyrolysis for CuInSe2 and by cathodic magnetron sputtering for Mo/TiN/Ti. CuInSe2 layers deposited onto glass substrates present high crystallinity with (112) preferred orientation at 550°C. However, these properties disappear for CuInSe2 on Inox316 with missing peak (112) and fall in the ratio Se/Cu from 1.9 to 1.1. According to EDS analysis, these results may be due to the Fe and Cu diffusion from Inox316 to CuInSe2 film, this is why the presence of TiN/Ti bi-layer improves the surface condition of Inox 316 and reduces Iron presence from 9.7% to 1.9% and Cr from 3.8% to 0.5%; this confirms its efficiency to improve the solar cell performance using Inox316 substrate.
关键词： CuInSe2 solar cells,TiN/Ti,roughness substrate,diffusion barrier,Inox 316
更新于2025-09-16 10:30:52
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Graphene interfacial diffusion barrier between CuSCN and Au layers for stable perovskite solar cells
摘要： Perovskite solar cells (PSCs) have rapidly achieved a remarkable power conversion efficiency (PCE). However, the inherent instability of components has impeded industrialization. Here we employed atomically-thin impermeable graphene (3 layers) as an interfacial barrier for moisture, I? ion, and Au diffusion. A new graphene transfer method was developed, and the position was carefully optimized between the CuSCN and Au electrode in a full cell considering the band alignment of cell components. There was a negligible change in maximum PCE (15.2-15.8%) with the incorporation of graphene due to the high hole mobility of graphene. The moisture intrusion was significantly reduced under 85% relative humidity (RH) for 3 weeks, suppressing PbI2 formation. The graphene barrier maintained >94% of initial PCE under 50% RH for 30 days. It mostly inhibited I? ion migration and perfectly blocked Au diffusion between the perovskite and Au electrode, allowing reversible recovery of electrical power during 3 continuous illumination/dark cycles (12 h each) with a positive bias. A further improvement in the graphene transfer method may enable a perfect single-layer graphene barrier, without compromising the average PCE of multiple devices.
关键词： CuSCN,Graphene,Diffusion barrier,Au layers,Stability,Perovskite solar cells
更新于2025-09-12 10:27:22
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A DLTS Perspective on Electrically Active Defects in Plated Crystalline Silicon n <sup>+</sup> p Solar Cells
摘要： Laser ablation (LA) has been compared with standard wet etching for contact opening in crystalline silicon n+p solar cells, from a perspective of electrically active defects, assessed by Deep-Level Transient Spectroscopy (DLTS). Copper metallization is employed, including a plated nickel diffusion barrier. It is shown that a hole trap around 0.17 eV above the valence band is systematically present in the depletion region of the junctions, irrespective of the contact opening method. This level could correspond with the substitutional nickel donor level in silicon and indicates that Ni in-diffusion occurs during the contact processing. No clear evidence for the presence of electrically active copper has been found. In addition, two other hole traps H2 and H3, belonging to point defects, have been observed after wet etching and standard LA, while for the highest laser power (hard LA) a broad band develops around 175 K, which is believed to be associated with dislocations, penetrating the p-type base region. Evidence will also be given for the impurity decoration of the dislocations, which enhances their electrical activity.
关键词： Deep-Level Transient Spectroscopy (DLTS),copper metallization,electrically active defects,laser ablation,nickel diffusion barrier,wet etching,crystalline silicon n+p solar cells
更新于2025-09-11 14:15:04