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Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$HfO2 interfacial layer formed by atomic layer deposition
摘要： X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO2/n-GaAs structures with 3- and 5-nm HfO2 interfacial layers, respectively, have been obtained from the I–V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal–insulating layer–semiconductor (MIS) devices with 3- and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde’s method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the (cid:2)b(V ) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the (cid:2)b(V ) vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde’s method for the same bias voltage values.
关键词： metal–insulating layer–semiconductor (MIS) device,Barrier height modification and inhomogeneous,bias-dependent barrier height,temperature-dependent MIS diode parameters,atomic layer deposition (ALD)
更新于2025-09-23 15:23:52
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Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode
摘要： In this paper, of primary interest is to synthesis 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid (INSA) and to evaluate the main parameters of Au/INSA/n-Si/Al diode in dark and under illumination. Different techniques are used for interpreting the proposed INSA chemical structure. The dark current-voltage measurements were achieved in the temperature range of 293?413 K. It is noticed that INSA films modify the interfacial barrier height of classical Au/n-Si junction. At low applied voltages, the I–V relation shows exponential behavior. The values ideality factor, n, and the barrier height, ?, are improved by heating. The abnormal trend of n and ? is discussed, and a homogenous barrier height of 1.45 eV is evaluated. The series resistance is also calculated using Norde’s function and it changes inversely with temperature. The space charge limited current ruled with exponential trap distribution dominates at relatively high potentials, trap concentration and carriers mobility are extracted. The reverse current of the diode has illumination intensity dependence with a good photosensitivity indicating that the device is promising for photodiode applications.
关键词： Diode parameters,Photodiodes,Conduction mechanism,Azo compounds
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON) - Lviv, Ukraine (2019.7.2-2019.7.6)] 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON) - Dependence of the Thin Film Solar Cells Efficiency from Operating Temperature
摘要： The made research results of the dependence of the film photovoltaic converters efficiency on their operating temperature and their comparison are considered in the paper. The physical mechanisms of temperature influence analysis on output, diode and electronic parameters of photovoltaic converters was conducted. The efficiency temperature coefficients of the photovoltaic converter, which make up for devices with a CdTe of -0.14 rel.%/C, CuInSe -0.36 rel.%/C, amorphous silicon -0.21 rel.%/C were obtained. The analytical processing and analysis of the light diode characteristic effect on the PVC efficiency based on the CdTe showed that the temperature stability of their efficiency is ensured by the diode current density, the incision which increases by 50% from 1.9·10-9 A to 2.7·10-9 A with the temperature rise from 20°С to 50°С.
关键词： solar cells,thin films,output and diode parameters,working temperature,photovoltaic converters,efficiency
更新于2025-09-11 14:15:04