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Dopant Activation of In Situ Phosphorusa??Doped Silicon Using Multia??Pulse Nanosecond Laser Annealing
摘要： Nanosecond laser annealing was performed on ISPD silicon in single- and multi-pulse modes. the active phosphorus concentration was increased with the laser power density and number of laser pulses and more phosphorus was activated with nanosecond lasers than with millisecond lasers. Moreover, almost all the incorporated phosphorus atoms were activated by the nanosecond laser without major strain loss when ISPD silicon melt
关键词： phosphorus-doped silicon,nanosecond laser annealing,diffusion,dopant activation,strain
更新于2025-09-23 15:19:57
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Thermal Activation of Boron- and Phosphorus-Doped Amorphous Silicon and the Contribution to Improved Efficiency in Hydrogenated Amorphous Silicon Solar Cells
摘要： Hydrogenated amorphous silicon (a-Si:H) is an interesting candidate as an absorber material for solar cells. Despite the wealth of research to improve the e?ciency of a-Si:H solar cells by improving either the material quality of the absorber layer or by means of light trapping approaches, e?orts to improve the e?ciency by means of doped layer manipulation are relatively rare. In this work, single-junction a-Si:H solar cells with improved e?ciency due to thermal activation of doped layers via thermal annealing will be presented. Temperature-dependent dark conductivity measurements revealed that p- and n-type doped a-Si:H materials show di?erent equilibrium temperatures. External quantum e?ciency at di?erent annealing temperatures revealed that front surface collection probability was improved with the activation of a p layer, after which the collection probability of the back surface was improved with the activation of an n layer.
关键词： Dopant activation,Amorphous silicon,Solar cells
更新于2025-09-16 10:30:52
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A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si <sub/>1?</sub><i> <sub/>x</sub></i> Ge <i> <sub/>x</sub></i> and Si layers
摘要： In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the most challenging process, we show the reliability of the SC1 chemical solution (NH4OH/H2O2/H2O) with its slow etch rate, stoichiometry conservation and low roughness generation. The reliability of a complete DHE procedure, with an etching step as small as 0.5 nm, is demonstrated on a dedicated 20 nm thick SiGe test structure fabricated by CVD and uniformly doped in situ during growth. The developed method is finally applied to the investigation of dopant activation achieved by advanced annealing methods (including millisecond and nanosecond laser annealing) in two material systems: 6 nm thick SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultra-shallow layers, providing sub-nanometre resolution for both dopant concentration and carrier mobility depth profiles.
关键词： contact resistance,sub-nanometre resolution,fully depleted silicon on insulator (FDSOI),carrier mobility,differential Hall effect,dopant activation,laser annealing
更新于2025-09-10 09:29:36