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Determination of Phonon Deformation Potentials in Carbon-Doped Silicon
摘要： Carbon-doped silicon (Si:C) is used as a stressor to the channel of n-type metal oxide semiconductor field-effect-transistor (MOSFET). In this study, we determined PDPs, phonon deformation potentials, (p and q) of Si:C to realize evaluation of anisotropic biaxial stress by using water-immersion Raman spectroscopy. Raman peak shift in longitudinal and transverse optical (LO and TO) phonon modes were measured by water-immersion Raman spectroscopy. Furthermore, in-plane and out-of-plane strain were measured by X-ray diffraction (XRD). Based on the Raman shift and the in-plane strain, p and q in each sample were derived. As a result, it took a different value from pure-Si, and the PDPs tended to increase as the C concentration increased.
关键词： phonon deformation potentials,strain evaluation,Carbon-doped silicon,X-ray diffraction,water-immersion Raman spectroscopy
更新于2025-09-23 15:21:01
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Near-Field Radiative Heat Transfer between Dissimilar Materials Mediated by Coupled Surface Phonon- and Plasmon-Polaritons
摘要： Near-field radiative heat transfer (NFRHT) between dissimilar materials supporting surface polaritons in the infrared is of critical importance for applications such as photonic thermal rectification and near-field thermophotovoltaics. Here, we measure NFRHT between millimeter-size surfaces made of 6H-SiC and doped Si, respectively supporting surface phonon-polaritons (SPhPs) and surface plasmon-polaritons (SPPs) in the infrared, separated by a 150-nm-thick vacuum gap spacing maintained via SiO2 nanopillars. For purpose of comparison, measurements are also performed between two doped Si surfaces. The measured radiative flux is in good agreement with theoretical predictions based on fluctuational electrodynamics. A flux enhancement beyond the blackbody limit of ~ 8.2 is obtained for the SiC-Si sample, which is smaller than the enhancement for the Si-Si sample (~ 12.5) owing to the spectral mismatch of the SiC and Si light lines, and SPhP and SPP resonances. However, due to lower losses in SiC than Si and weaker SPhP-SPP coupling than SPP coupling, the near-field enhancement for the SiC-Si sample exhibits a more pronounced monochromatic behavior with a resonant flux that is ~ 5 times larger than the resonant flux for the Si-Si sample. This work demonstrates that it is possible to modulate NFRHT via surface polariton coupling, and will accelerate the development of energy conversion and thermal management devices capitalizing on the near-field effects of thermal radiation between dissimilar materials.
关键词： radiative flux measurement,doped silicon,near-field radiative heat transfer,dissimilar materials,coupled surface phonon- and plasmon-polaritons,silicon carbide
更新于2025-09-23 15:19:57
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Dopant Activation of In Situ Phosphorusa??Doped Silicon Using Multia??Pulse Nanosecond Laser Annealing
摘要： Nanosecond laser annealing was performed on ISPD silicon in single- and multi-pulse modes. the active phosphorus concentration was increased with the laser power density and number of laser pulses and more phosphorus was activated with nanosecond lasers than with millisecond lasers. Moreover, almost all the incorporated phosphorus atoms were activated by the nanosecond laser without major strain loss when ISPD silicon melt
关键词： phosphorus-doped silicon,nanosecond laser annealing,diffusion,dopant activation,strain
更新于2025-09-23 15:19:57
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Imaging Interstitial Iron Concentrations in Gallium-Doped Silicon Wafers
摘要： In this work, the established method of iron imaging is transferred from B-doped silicon to Ga-doped material. For this purpose, the pairing and splitting conditions are investigated and a preparation procedure suggested that ensures a sufficient fraction of iron–gallium pairing and splitting, respectively. Furthermore the defect parameters available in literature are compared and evaluated for a suitable description of the injection dependent carrier lifetime measurements. A parameter set that enables a coherent and adequate iron evaluation is suggested. Thus, a robust method for spatially resolved determination of the interstitial iron concentration in Ga-doped silicon wafers is presented.
关键词： multicrystalline silicon,defect parameters,photoluminescence,iron imaging,Ga-doped silicon
更新于2025-09-19 17:15:36
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Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing
摘要： Highly phosphorus-doped silicon source/drains are investigated to improve the performance of N-type metal-oxide-semiconductor field-effect transistors by decreasing their resistance and imparting strain to their channels. To find effective high temperature annealing for the activation of phosphorus in the source/drains, we apply single- and multi-pulse nanosecond laser annealing on highly phosphorus-doped silicon. The microstructure, strain, and electrical properties of highly phosphorus-doped silicon before and after laser annealing are analyzed. Our results demonstrate that the defects in both the recrystallized silicon and the end of range are decreased with 600 mJ cm?2 10-pulse annealing while considerable increase in phosphorus activation is achieved.
关键词： nanosecond laser annealing,strain engineering,activation,phosphorus-doped silicon,recrystallization
更新于2025-09-16 10:30:52
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Full Activation of Boron in Silicon Doped by Self-assembled Molecular Monolayers
摘要： The self-assembled molecular monolayer (SAMM) doping has great potential in state-of-the-art nanoelectronics with unique features of atomically precision and non-destructive doping on complex 3D surfaces. However, it was recently found that carbon impurities introduced by the SAMM significantly reduced the activation rate of phosphorus dopants by forming majority carrier traps. Developing a defect-free SAMM doping technique with a high activation rate for dopants becomes critical for reliable applications. Considering that susbstitutional boron does not interact with carbon in silicon, herein we employ Hall measurements and secondary ion mass spectrometry (SIMS) to investigate boron activation rate, and then deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) to analyze defects in boron-doped silicon by the SAMM technique. Unlike the phosphorus dopants, the activation rate of boron dopants is close to 100%, which is consistent with the defect measurement results (DLTS and MCTS). Only less than 1% boron dopants bind with oxygen impurities, forming majority hole traps. Interestingly carbon-related defects in form of CsH and CsOH act as minority trap states in boron-doped silicon which will only capture electrons. As a result, the high concentration of carbon impurities have no impact on the activation rate of boron dopants.
关键词： boron-doped silicon,Full activation,molecular monolayer doping,carbon-related defects,minority carrier trap
更新于2025-09-12 10:27:22
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Mechanical modeling and characterization of suspended cooled silicon bolometers for sub-millimeter and millimeter waves polarization detection
摘要： Silicon bolometers for space and astronomy applications, fabricated in standard CMOS-SOI technology are now successfully used as cryogenic detectors working at very low temperature, typically in the range of 0.05–0.1 K. They feature a remarkably high electromagnetic absorption, high temperature sensitivity and low noise. However, the mechanical behavior of suspended silicon bolometers results from the fabrication process parameters and a good understanding of these mechanisms is necessary to better control their deformation. In this work, silicon bolometer pixels with a pitch of 1200 μm and 500 μm for millimeter-wave (mm-wave) polarization detection have been fabricated and their mechanical behavior is investigated at room temperature and cryogenic temperature. First, a mechanical model was developed based on simulated and experimental deformations at room temperature of multi-layer cantilever test structures with different Young’s modulus and thickness (Ei, hi). The actual multi-layer suspended structures are modeled as an equivalent composite layer with an effective Young’s modulus (Eeff), an effective thickness (heff) and residual stresses (σ0, σ1). The residual stress values are positive, corresponding to a tensile stress in the fabricated multilayer stack. The impact of the a-Si passivation thickness on the total stress is discussed. The equivalent model is used in the simulation of the full pixel structure and results in excellent agreement with optical measurements of the deflection at room temperature. At cryogenic temperatures, mechanical deformations can hardly be measured, so the mechanical behavior of a 500-μm pixel was simulated at 0.1 K assuming that tensile residual stresses coming from defects are independent on temperature, and a good mechanical stability of the pixel was obtained. The optical performance simulation of this 500-μm pixel is discussed and showed that the mechanical deformations result in a degradation of the Noise Equivalent Power (NEP) from 1.59 × 10?18 to 1.05 × 10?17 W/Hz1/2 for an optical load of 6 × 10?15 W at 0.1 K.
关键词： Multilayer mechanical model,Cantilever,Doped silicon,FEM,Bolometer
更新于2025-09-11 14:15:04