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P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs
摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.
关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width
更新于2025-09-23 15:23:52
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Investigation of RF and DC Performance of E-Mode In <sub/>0.80</sub> Ga <sub/>0.20</sub> As/InAs/In <sub/>0.80</sub> Ga <sub/>0.20</sub> as Channel based DG-HEMTs for Future Submillimetre Wave and THz Applications
摘要： In this paper, we systematically investigated the DC and RF behaviour of the novel Enhancement-Mode (E-Mode) Double-Gate High Electron Mobility Transistors (DGHEMTs) using Sentaurus-TCAD software. The scalability of the novel DGHEMT is also studied by analysing the short channel effects. The attractive features of the proposed DGHEMT are intrinsic In0.80Ga0.20As/InAs/In0.80Ga0.20As channel, dual silicon delta doping sheets and platinum (Pt) buried gate technology. The proposed DGHEMT with Lg = 20 nm exhibits a gm_max of 3970 mS/mm and IDS_max of 1650 mA/mm at VGS = 0.6 V and VDS = 0.8 V. The proposed DGHEMT exhibits a threshold voltage of 20 mV which indicates its E-Mode behaviour. The sub-threshold swing (SS) and DIBL values obtained for Lg = 20 nm DGHEMT at VDS = 0.5 V are 74 mV/dec and 78 mV/V respectively. The Lg = 20 nm proposed E-Mode DGHEMT also exhibit a fT and fmax of 826 and 1615 GHz respectively at VDS = 0.6 V. The computed logic gate delay for the Lg = 20 nm DGHEMT is 31.25 fS with an electron velocity under the gate of 6.4 × 107 cm/S. This excellent RF and DC behaviour of the proposed DGHEMT makes them an excellent choice for future sub-millimetre wave and THz frequency applications.
关键词： quantum well (QW),InAs,Drain induced barrier lowering (DIBL),short channel effects (SCEs),gate delay,sub-threshold swing (SS)
更新于2025-09-23 15:23:52
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Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs
摘要： Aluminum-doped ZnO (AZO) has huge prospects in the field of conductive electrodes, due to its low price, high transparency, and pro-environment. However, enhancing the conductivity of AZO and realizing ohmic contact between the semiconductor and AZO source/drain (S/D) electrodes without thermal annealing remains a challenge. Here, an approach called pulsed laser deposition (PLD) is reported to improve the comprehensive quality of AZO films due to the high energy of the laser and non-existence of the ion damage. The 80-nm-thick AZO S/D electrodes show remarkable optical properties (transparency: 90.43%, optical band gap: 3.42 eV), good electrical properties (resistivity: 16 × 10?4 ?·cm, hall mobility: 3.47 cm2/V·s, carrier concentration: 9.77 × 1020 cm?3), and superior surface roughness (Rq = 1.15 nm with scanning area of 5 × 5 μm2). More significantly, their corresponding thin film transistor (TFT) with low contact resistance (RSD = 0.3 M?) exhibits excellent performance with a saturation mobility (μsat) of 8.59 cm2/V·s, an Ion/Ioff ratio of 4.13 × 106, a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. Furthermore, the average transparency of the unpatterned multi-films composing this transparent TFT can reach 78.5%. The fabrication of this TFT can be suitably transferred to transparent arrays or flexible substrates, which is in line with the trend of display development.
关键词： PLD,TFT,AZO,transparency,source/drain electrodes
更新于2025-09-23 15:23:52
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A Simulation Perspective: The Potential and Limitation of Ge GAA CMOS Devices
摘要： The electrical characteristics of <110> n/p Ge nanowire transistors (NWTs) with the cross section of 6×6nm2 have been studied. The ION performance and the subthreshold swing are simulated by multi-subband Boltzmann transport equation and ballistic quantum transport solvers, respectively. The performance of <110> nGe NWTs is sensitive to the barrier height of interfacial layer due to highly-anisotropic Λ-valleys. The dimension-dependent k·p parameters based on tight-binding full band are used to address the strong confinement of pGe NWTs. Comparing to Si NWTs, the intrinsic ION is twice as high for both n/p Ge NWTs at 28nm channel length. As the channel length is scaled down, such ION benefit is maintained till the tunneling effect comes in and degrades the subthreshold swing.
关键词： source-to-drain tunneling,Ge,ballistic ratio,nanowire,CMOSFETs,interfacial layer
更新于2025-09-23 15:22:29
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An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si <sub/> 1? <i>x</i> </sub> Ge <sub/><i>x</i> </sub> Films for Non-Alloyed Ohmic Contact
摘要： In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1?xGex contact region by preventing penetration into the Si1?xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1?xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1?xGex film with various levels of germanium (Ge) concentration. The case of Si0.7Ge0.3 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si0.7Ge0.3 structure is reduced 80-fold compared to that of a Ti/Si0.7Ge0.3 structure. The effect of the MIS structure has been well demonstrated on Si1?xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1?xGex complementary metal-oxide-semiconductor (CMOS) technology.
关键词： Epitaxial Growth,Metal-Interlayer-Semiconductor,Source/Drain Contact,Silicon-Germanium,Fermi-Level Pinning,Specific Contact Resistivity
更新于2025-09-23 15:22:29
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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
摘要： The impact of the manufacturing process on the radiation induced degradation effects observed in CMOS image sensors at the MGy total ionizing dose levels is investigated. Moreover, the vulnerability of the partially pinned photodiodes at moderate to high total ionizing doses is evaluated for the first time to our knowledge. It is shown that the 3T standard partially pinned photodiode has the lowest dark current before irradiation, but its dark current increases to ~1 pA at 10 kGy(SiO2). Beyond 10 kGy(SiO2), the pixel functionality is lost. The comparison between several CIS technologies points out that the manufacturing process impacts the two main radiation induced degradations: the threshold voltage shift of the readout chain MOSFETs and the dark current increase. For all the tested technologies, 1.8V MOSFETs exhibit the lower threshold voltage shift and the N MOSFETs are the most radiation tolerant. Among all the tested devices, 1.8V sensors achieve the best dark current performance. Several radiation-hard-by-design solutions are evaluated at MGy level to improve further the understanding of CIS radiation hardening at extreme total ionizing dose.
关键词： Gate Overlap,Radiation Effects,Drain,CMOS Image sensors,Partially Pinned Photodiode,Dark Current,TID,Threshold shift,RHBD
更新于2025-09-23 15:21:01
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[Lecture Notes in Electrical Engineering] Advances in Signal Processing and Communication Volume 526 (Select Proceedings of ICSC 2018) || Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)
摘要： In this paper, the single-gate junctionless (JL) MOSFET with extremely thin silicon germanium (SiGe) device layer on insulator (ETSG-OI) is explored to identify the short channel effects (SCEs) and electrical behavior of the device. The device incorporates various engineering schemes (channel and spacer engineering scheme) with JL topology on SOI platform. The in?uence of the SiGe device layer with mole fraction (x) variation (x (cid:2) 0.25, 0.5, 0.75) is investigated to understand the bandgap differences of the device. Depending on the change in Ge mole fraction, the energy potential, electric ?eld, and drain induced barrier lowering (DIBL) performances are analyzed. From the simulation results at x (cid:2) 0.25, the ETSG-OI JLCT shows reasonable improvement in ON current (I ON) and DIBL at both linear and saturation drain voltages. For different values of x, the energy bandgap tends to vary from 0.6?1.1 eV. It is observed that at x (cid:2) 0.25 the bandgap is 0.8 eV which is almost near to the bandgap of Si material due to the 25% existence of Ge material.
关键词： Electrical performances,Silicon germanium,Drain induced barrier lowering,I ON-I OFF,Junctionless MOSFET
更新于2025-09-10 09:29:36
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Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain
摘要： Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p- and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope (?? factor). Especially, ??d of 0.2 ??A/??m is revealed at ??g ? ??th = ??d = ±0.5 V for Ge pTFETs, with the ?? factor of 28 mV/dec at 7 K.
关键词： ON-state current,NiGe metal source/drain,Ge complementary tunneling field-effect transistors,sub-threshold slope,Schottky barrier heights,dopant segregation
更新于2025-09-10 09:29:36
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Growth and electrical properties of in situ Sb-doped Ge <sub/>1?</sub><i> <sub/>x</sub></i> Sn <i> <sub/>x</sub></i> epitaxial layers for source/drain stressor of strained-Ge transistors
摘要： We have investigated the thermal stability of heavily Sb-doped n+-Ge and n+-Ge0.94Sn0.06 epitaxial layers grown on a Ge substrate by annealing up to a temperature of 400 °C. The Ge0.94Sn0.06 sample with a Sb concentration higher than 1020 cm%3 retained superior crystallinity and a smooth surface even after annealing. It also maintained an electron concentration higher than the solid solubility of Sb and the highest substitutional Sb concentration after 400 °C annealing. We found the possibility of a low-contact-resistivity device employing Ge0.94Sn0.06 with a high electron concentration and a metal with an electrode fabrication temperature lower than 400 °C.
关键词： thermal stability,Sb-doped Ge1-xSnx,source/drain stressor,strained-Ge transistors,epitaxial layers
更新于2025-09-09 09:28:46
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Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors
摘要： Scaling down the bandgap is considered as an essential approach to enhance the performance of tunnel field-effect transistors (TFETs). Using two-dimensional simulations, this study examines the dependence of short-channel effects on the semiconductor bandgap in TFETs. It is shown that the short-channel effect is more severe with using lower bandgap materials although the supply voltage is scaled in parallel with the bandgap. For a given bandgap material, the short-channel effect can be well evaluated by the increase of drain-induced barrier thinning (DIBT) with decreasing the channel length. For different bandgap TFETs, however, their short-channel effects cannot be compared properly by comparing the DIBTs. Adequately considering the effect of bandgap on the TFET scalability is necessary in designing scaled integrated circuits.
关键词： drain-induced barrier thinning,tunnel field-effect transistors,DIBT,semiconductor bandgap,TFETs,short-channel effects
更新于2025-09-09 09:28:46