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New approach to raising the resolution of position sensitive detector with moving current-voltage characteristic
摘要： Position sensitive detectors (PSD) are widely applied for determining the coordinate of an optical signal and continuously tracking it. Currently, studies concerned with the possibility of further raising the spatial resolution of PSDs remain topical. In this paper, we present the results obtained in reaching an ultrahigh resolution for a device based on the PSD Multiscan with an integral operation principle which fundamentally differs from that of the lateral PSD. The PSD Multiscan design is based on an array of back-to-back photodiodes. Its optical signal coordinate read-out is formed via the moving current-voltage characteristic of the sensor directly on the PSD as an output potential proportional to the coordinate of the optical spot median. This measurement principle provides a continuous comparison of near-equal photocurrents, which maintains a high signal-to-noise ratio over the whole sensing area. The absence of computational operations in electronic circuits of the PSD Multiscan makes it possible to introduce a nonlinear amplifier element, which substantially improves the resolution of the device based on the sensor developed in the study (as good as 0.05 μm). It has been shown that the resolution remains high for detectors with different lengths and is independent of the position of the optical spot on the sensing area.
关键词： Analogue electronic circuits,Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc),Optical detector readout concepts
更新于2025-09-23 15:21:01
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Characteristics of an organic photodetector with a conjugated donor and non-fullerene acceptor for indirect X-ray detection
摘要： In this study, an organic photodetector with a small band-gap donor, PBDB-T, and a non-fullerene acceptor, ITIC, was investigated as the active element in an indirect imaging system using a scintillator of the detector for indirect X-ray imaging. Compared with the common organic photodetector with a P3HT:PC70BM active layer, higher conversion e?ciencies can be expected, because the proposed detector is advantageous for visible-light absorption and carrier transport. The absorption peak of the PBDB-T:ITIC layer was located at 640 nm and was not well-matched with the emission properties of a CsI(Tl) scintillator. Therefore, a ZnSe(Te) scintillator with an emission peak at 620 nm was also tested. Compared with the P3HT:PC70BM detector, the ZnSe(Te)-coupled detector with the PBDB-T:ITIC = 1:1 active layer was 191% higher in collected current density (CCD) and 205% higher in sensitivity. The frequency response was measured with a 520 nm green LED. The detector with the PBDB-T:ITIC layer showed the -3 dB cut-o? frequency of 31.5 kHz, which was higher than the cut-o? frequency of the P3HT:PC70BM detector.
关键词： Materials for solid-state detectors,Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc),X-ray detectors
更新于2025-09-12 10:27:22
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Study of silicon photomultiplier performance in external electric fields
摘要： We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.
关键词： Cryogenic detectors,Double-beta decay detectors,Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc),Noble liquid detectors (scintillation, ionization, double-phase)
更新于2025-09-04 15:30:14