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Electrical Properties of a ZTO Thin-Film Transistor Prepared with Near-Field Electrohydrodynamic Jet Spraying
摘要： Zinc-tin oxide (ZTO) thin-films were prepared by applying a near-field around the tip of electro-hydrodynamic (EHD) jet spray system and characterized. Oval shaped multi droplets were obtained by the near-field assisted EHD (NF-EHD) jet spray. The optimized condition of an approximately 2.5 to 3 volts difference between the tip and near-field enabled the oxide semiconductor solution to spray properly. The electrical properties of ZTO thin-film transistor showed a mobility of 2.96 cm2/Vs, an on-to-off ratio of 107, a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability under bias stress and relaxation after stress were observed after applying a near-field to the EHD jet spray system.
关键词： Oxide TFT,Electrohydrodynamic Jet,Near-field,Spray,Electrical Properties
更新于2025-09-19 17:15:36
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Optimization of Quantum Dot Thin Films using Electrohydrodynamic Jet Spraying for Solution-Processed Quantum Dot Light-Emitting Diodes
摘要： the electrohydrodynamic (eHD) jet spraying process is a good method for making quantum dot (QD) layers in light-emitting diodes (LeDs). However, controlling the morphology and large-scale fabrication of the QD layers are critical for realizing all-solution-processed QD-LeDs with high performance. three spraying techniques were used with the EHD jet spraying technique: a big circular film method, a spiral-line method, and a straight-line method. These techniques were used to obtain QD films with good uniformity. the straight-line spray showed the most promise to obtain a uniform QD layer with large area, and QD-LeDs made with this method showed better performance with a low turn-on voltage of 3.0 V, a luminance of 7801 cd/m2, and a maximum current efficiency of 2.93 cd/A.
关键词： Solution-processed,Quantum Dot,electrohydrodynamic Jet Spraying,thin films,Quantum Dot Light-emitting Diodes
更新于2025-09-12 10:27:22