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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Bosch Etching Study with Large Open Rate and Depth Application
摘要： With the development of semiconductor technology, Bosch etching technology is more and more used in 2.5D multi-die integration and 3D wafer level chip size package. Bosch etching can get a vertical via with anisotropic, which helps to promote miniaturization. Bosch etching process has a new challenge for large open rate and depth applications, such as PCR (polymerase chain reaction) chip and optical fingerprint chip scale package. This paper introduces some experiments with optimizing parameters, including chuck temperature, photo resist layer thickness and bias power. In this study, it is successful to develop a through-hole with 45% open rate and 350 um depth. The selectivity can be above 30:1 with 17 um photo resist layer under 5℃ chuck temperature. The etch rate can be 4.6 um/min with 3.1% uniformity in a good profile. At the same time, the scallop is about 50 nm. The bottom via open is 3 um larger than the top via with 51 um.
关键词： selectivity,uniformity,large open rate and depth,via side,etch rate,Bosch etching
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Singapore, Singapore (2018.4.22-2018.4.26)] 2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) - Wafer-Scale Fabrication of V-Shaped Silicon Nano-Slit Arrays
摘要： This paper presents a strategy of fabricating v-shaped nano-slit arrays in silicon substrates at wafer scale, by using a three-step wet anisotropic etching method with the combination of a color-feed mechanism. Through careful mask design, nano-slits with various aspect ratios and sizes were obtained at wafer scale. The minimum feature size of the obtained nano-slits was 5 nm, which holds great potential in bio-molecule analysis such as DNA and protein detection and analysis.
关键词： uniformity,v-shaped nano-slit arrays,wet anisotropic etching,feature size
更新于2025-09-23 15:22:29
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Process for fabricating microactuator membranes of piezoelectric inkjet print head using multi-step deep reactive ion etching process
摘要： As part of an effort to develop piezoelectric inkjet print head (PIPH), a process for fabricating its Si-cups and actuator membranes of multi-layered structures was investigated. The manufacture of this device was enabled by the use of deep reactive ion etching (DRIE). Based on that, multi-step DRIE process was proposed to etch the multi-layered actuator membranes on silicon on insulator wafers. Due to the appropriate parameters of the etching process, undesirable effects, such as Si grasses, notching effect of Si-cups and the bowing formation on the sidewalls, were also avoided. The way to eliminate the over-etching of SiO2 membranes by controlling the appropriate platen power and process duration simultaneously was also presented. High quality PIPH actuator membranes were ?nally obtained, making great contributes to the successful inkjet test.
关键词： multi-layered actuator membranes,deep reactive ion etching,piezoelectric inkjet print head,silicon on insulator wafers,over-etching
更新于2025-09-23 15:21:21
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Ag nanocrystals with nearly ideal optical quality: synthesis, growth mechanism, and characterizations
摘要： Though Ag nanocrystals are predicted as the best material for localized surface plasmon resonances (LSPR) in the visible light region, realization of their ideal LSPR properties is hindered by the stringent requirement, i.e., simultaneous control of their size, shape, crystallinity, and surface structure. To achieve this goal, a synthetic scheme in non-polar solvent coupled with mild oxidative-etching by H+ ions is established. With a trace amount of Cl- ions as catalysts, H+ ions (in the form of carboxylic acids) become active for selectively etching the nuclei (and small nanocrystals) with imperfect crystal structure, which results in a new growth mechanism for formation of monodisperse nanocrystals, namely “self-focusing of size/crystallinity distribution”. H+ ions, ligands, and other reagents in the scheme are confirmed to possess negligible effects on the surface dielectric properties of Ag nanocrystals. To eliminate radiative damping of LSPR, single-crystalline and monodisperse spherical Ag nanocrystals in the size range between 7 and 20 nm are synthesized using this one-pot scheme. With excellent control of all the structural parameters, the full-width-at-half-maximum of LSPR spectra of single-crystalline Ag nanocrystals match theoretical predictions in the entire size range, and the maximum quality factor (~20) of LSPR predicted by theory is realized. Raman enhancement factor of the single-crystalline Ag nanocrystals for crystal violet (excitation at 514 nm) is 5 times higher than that of the typical multi-twinned ones with the same size.
关键词： localized surface plasmon resonances,oxidative-etching,monodisperse,single-crystalline,Ag nanocrystals,Raman enhancement
更新于2025-09-23 15:21:21
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Silicon Nitride MOMS Oscillator for Room Temperature Quantum Optomechanics
摘要： Optomechanical SiN nano-oscillators in high-finesse Fabry–Perot cavities can be used to investigate the interaction between mechanical and optical degree of freedom for ultra-sensitive metrology and fundamental quantum mechanical studies. In this paper, we present a nano-oscillator made of a high-stress round-shaped SiN membrane with an integrated on-chip 3-D acoustic shield properly designed to reduce mechanical losses. This oscillator works in the range of 200 kHz to 5 MHz and features a mechanical quality factor of Q ≈ 107 and a Q-frequency product in excess of 6.2 × 1012 Hz at room temperature, fulfilling the minimum requirement for quantum ground-state cooling of the oscillator in an optomechanical cavity. The device is obtained by MEMS deep reactive-ion etching (DRIE) bulk micromachining with a two-side silicon processing on a silicon-on-insulator wafer. The microfabrication process is quite flexible such that additional layers could be deposited over the SiN membrane before the DRIE steps, if required for a sensing application. Therefore, such oscillator is a promising candidate for quantum sensing applications in the context of the emerging field of quantum technologies.
关键词： reactive ion etching,MOMS oscillator,quantum optomechanics,SiN thin membrane
更新于2025-09-23 15:21:21
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823 mA/mm drain current density and 945 MW/cm2 Baliga’s figure of merit enhancement-mode GaN MISFETs with a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric
摘要： In this letter, we demonstrate a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric employed in enhancement-mode GaN MISFETs, where the gate recess is fabricated based on our proposed self-terminating gate recess etching technique using GaN cap layer as recess mask. By using LPCVD-Si3N4 and PEALD-AlN dual gate dielectric layer, the devices exhibit a high quality gate dielectric and a good GaN channel interface, yielding a high gate swing up to 18V and a high channel effective mobility of 137 cm2/V?s at such high gate bias. Thus, the fabricated devices feature a high maximum drain current density of 823 mA/mm, a threshold voltage of 2.6 V, an on-resistance of 7.4 Ω?mm, and an ON/OFF current ratio of 108 with gate-drain distance of 2 μm. Meanwhile, a high OFF-state breakdown voltage of 1290 V is achieved with 10 μm gate-drain distance. The corresponding specific on-resistance is as low as 1.76 mΩ?cm2, leading to a high Baliga’s ?gure of merit of 945 MW/cm2.
关键词： self-terminating etching,enhancement-mode GaN MISFETs,plasma-enhanced atomic layer deposition (PEALD) AlN,LPCVD Si3N4
更新于2025-09-23 15:21:21
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Diamond nanofeathers
摘要： This paper reports a special diamond nanostructure which we call diamond nanofeathers (DNFs). The nanostructure was discovered after electrochemically etching doped nanocrystalline diamond (NCD) films. With high resolution SEM, we have repeatedly observed highly porous, fractal-like geometry with “shafts”, “barbs” and “barbules” of the DNFs. A DNF has very high aspect ratio, with a height comparable to the thickness of the etched diamond film and a lateral size as small as several nanometers. This diamond nanostructure seems not to belong to either conventionally defined NCD or ultrananocrystalline diamond (UNCD). The Raman spectra tell that after the electrochemical etch, the DNFs have lower signals from the grain boundaries, compared with the Raman spectra before the etch, which suggests the pores of the DNFs was related with mass loss from the grain boundaries. Preliminary electrochemical characterization has observed more than 300× capacitance increase after the DNFs are fabricated out of a NCD film. With the specific pore size and the ease of fabrication, the DNFs could be a great material choice for supercapacitors, batteries, sensors, and solar cells etc.
关键词： Diamond nanofeathers,Supercapacitors,Nanocrystalline diamond,Raman spectra,Electrochemical etching
更新于2025-09-23 15:21:21
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Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
摘要： In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7–14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study of photoluminescence (PL) spectra of SiNWs/ZnO samples showed the domination of defect emission bands, pointing to deviations of the stoichiometry of the prepared 3D ZnO nanostructures. Reduction of the PL intensity of the SiNWs/ZnO with the increase of SiNWs etching time was observed, depicting an advanced light scattering with the increase of the nanowire length. These results open up new prospects for the design of electronic and sensing devices.
关键词： nanosphere lithography (NSL),atomic layer deposition (ALD),Silicon nanowires (SiNWs),metal-assisted chemical etching (MACE),ZnO
更新于2025-09-23 15:21:21
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Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell
摘要： A homogeneous diamond wire sawing multicrystalline Si surface with nanoscale oval pits was obtained in an acid solution by adding NaNO2, polyethylene glycol–polyvinyl alcohol, and dodecylbenzene sulfonic acid at 12 °C for 130 s. The textured surface showed orientation dependence. The anisotropy of H/D caused different experimental results. The Rave of incident light originating from the direction parallel to saw marks was 22–27% larger than that from the direction perpendicular to saw marks. The photovoltaic conversion efficiency was 0.6–0.8% higher when the thin grid line of Ag electrode was parallel to the saw marks than when in the perpendicular direction. These results indicated that using saw marks can improve the conversion efficiency of solar cells.
关键词： Acid etching,Multi-crystalline silicon,Texturization,Wet chemical etching
更新于2025-09-23 15:21:01
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Subwavelength-scale nanorods implemented hexagonal pyramids structure as efficient light-extraction in Light-emitting diodes
摘要： Subwavelength-scale nanorods were implemented on the hexagonal pyramid of photochemically etched light-emitting diodes (LEDs) to improve light extraction efficiency (LEE). Sequential processes of Ag deposition and inductively coupled plasma etching successfully produce nanorods on both locally unetched flat surface and sidewall of hexagonal pyramids. The subwavelength-scale structures on flat surface offer gradually changed refractive index, and the structures on side wall of hexagonal pyramid reduce backward reflection, thereby enhancing further enhancement of the light extraction efficiency. Consequently, the nanorods implemented LED shows a remarkable enhancement in the light output power by 14% compared with that of the photochemically etched LEDs which is known to exhibit the highest light output power. Theoretical calculations using a rigorous coupled wave analysis method reveal that the subwavelength-scale nanorods are very effective in the elimination of TIR as well as backward reflections, thereby further enhancing LEE of the LEDs.
关键词： subwavelength-scale nanorods,light-emitting diodes,light extraction efficiency,hexagonal pyramids,photochemical etching
更新于2025-09-23 15:21:01