- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Selective Wet-Etching of Polymer/Fullerene Blend Films for Surface- and Nanoscale Morphology-Controlled Organic Transistors and Sensitivity-Enhanced Gas Sensors
摘要： Surface and nanoscale morphology of thin poly(3-hexylthiophene) (P3HT) ?lms are e?ectively controlled by blending the polymer with a soluble derivative of fullerene, and then selectively dissolving out the fullerene from the blend ?lms. A combination of the polymer blending with fullerene and a use of diiodooctane (DIO) as a processing additive enhances the molecular ordering of P3HT through nanoscale phase separation, compared to the pristine P3HT. In organic thin-?lm transistors, such morphological changes in the blend induce a positive e?ect on the ?eld-e?ect mobility, as the mobility is ~5–7 times higher than in the pristine P3HT. Simple dipping of the blend ?lms in butyl acetate (BA) causes a selective dissolution of the small molecular component, resulting in a rough surface with nanoscale features of P3HT ?lms. Chemical sensors utilizing these morphological features show an enhanced sensitivity in detection of gas-phase ammonia, water, and ethanol.
关键词： selective etching process,morphology,polymer blend,chemical sensor,organic thin-?lm transistor
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Mechatronics, Robotics and Systems Engineering (MoRSE) - Bali, Indonesia (2019.12.4-2019.12.6)] 2019 International Conference on Mechatronics, Robotics and Systems Engineering (MoRSE) - Bottled Water Identification & Fraud Detection Using Spectroscopy & Convolutional Neural Network
摘要： In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (VF), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of ～1 nA/mm and an ION/IOFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (～1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the dif?cult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I–V characterization, and a more ALE-dependent dynamic ON-resistance is observed.
关键词： atomic layer etching (ALE),200-mm,leakage,metal–insulator–semiconductor high-electron mobility transistor (MISHEMT),GET-SBD,diode,AlGaN/GaN
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Control of Texture Size on As-Cut Crystalline Silicon by Microparticle-Assisted Texturing (MPAT) Process
摘要： The texture size on as-cut crystalline silicon (c-Si) is drastically reduced from ~22 μm to <2.7 μm when mixing glass microparticles with conventional alkaline texturing solutions. The processing time and c-Si loss are considerably reduced from >15 to ~3 min and from >8 to 2 μm (for one side), respectively. Thus, this process is applicable to very thin c-Si. High-quality surface passivation with the effective minority carrier lifetimes >7 ms, corresponding to surface recombination velocity of 0.38 cm/s was possible. After anti-reflection coating, the reflectivity ~0.4% at 600nm, and <2% in wide wavelength 450?950nm was achieved on this new texture.
关键词： photovoltaic cells,light trapping,charge carrier lifetime,etching,cleaning,silicon,chemical processes
更新于2025-09-19 17:13:59
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27.2: <i>Invited Paper:</i> High resolution FMM process for AMOLED displays
摘要： Fine metal mask (FMM) is one of the biggest hurdles to realize high resolution AMOLED displays for smartphone and virtual reality (VR). Various kinds of the material and processing technologies for high resolution FMMs are discussed.
关键词： Invar,Chemical Etching,VR (Virtual Reality),Electroforming,Laser patterning,FMM (Fine Metal Mask),UHD (Ultra High Definition),AMOLED
更新于2025-09-19 17:13:59
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Broadband Anti-Reflection in Black Silicon Fabricated by Two-Step Silver-Assisted Wet Chemical Etching for Photovoltaics
摘要： This paper reports broadband anti-reflection in black silicon (b-Si) fabricated by two-step metal-assisted chemical etching (MACE) for potential photovoltaic (PV) applications. The method involves deposition of silver nanoparticles (Ag NPs) in aqueous solution of HF:AgNO3, followed by etching in HF:H2O2:DI H2O solution for different duration (10-25 s). Effects of etching time towards surface morphological and optical properties of b-Si nanowires are investigated. Surface morphological characterization confirms presence of b-Si nanowires with heights of 350-570 nm and diameter of 150-300 nm. The b-Si nanowires exhibit outstanding broadband anti-reflection due to refractive index grading effect. This is represented as weighted average reflection (WAR) in the 300-1100 nm wavelength region. After 20 s of etching, b-Si nanowires with height of 570 nm and width of about 200 nm are produced. The nanowires demonstrate WAR of 5.5%, which represents the lowest WAR in this investigation. This results in absorption of 95.6% at wavelength of 600 nm. The enhanced broadband light absorption yields maximum potential short-circuit current density (Jsc(max)) of up to 39.7 mA/cm2, or 51% enhancement compared to c-Si reference. This facile b-Si fabrication method for broadband enhanced anti-reflection could be a promising technique to produce potential PV devices with high photocurrent.
关键词： black silicon,nanowires,silver-assisted etching,refractive index grading,anti-reflection
更新于2025-09-19 17:13:59
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Effect of normal scratch load and HF etching on the mechanical behavior of annealed and chemically strengthened aluminosilicate glass
摘要： Micro-cracks generated by hard body scratch are a major cause of strength decrease for silicate glass. The influence of normal scratch load on the cracking patterns and flexural strength of annealed glass (AG) and chemically strengthened glass (CSG) were studied. With the increase of the normal load, the load capacity of scratched AG specimens decreased to about 40MPa at 20gf immediately. However, the residual strength of CSG decreased to a steady value of 145MPa as the scratch load increased to 500gf. Then the effect of hydrofluoric acid (HF) etching on the surface morphology and mechanical properties of the 500gf scratched glass were investigated. After 8min (for CSG) and 16 min (for AG) acid treatment, the flexural strength of CSG and AG increased to a considerable value of 900MPa, which is 3.6 and 5.5 times higher than the flexural strength of undamaged specimens. Microscopic observations show that the blunting and eliminating of median cracks as well as the formation of new surfaces are the main causes of strength enhancement.
关键词： morphology,aluminosilicate glass,scratch,flexural strength,HF etching
更新于2025-09-19 17:13:59
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Economical Solution for Cladding Etched Optical Fibers
摘要： We demonstrate an economical wet etching solution for optical fibers using glass etching cream. The etching performance and surface quality on optical fibers are investigated. The solution offers good controllability and repeatable outcomes.
关键词： optical fibers,glass etching cream,Chemical wet etching
更新于2025-09-16 10:30:52
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Hollow Porous Gold Nanoshells with Controlled Nanojunctions for Highly Tunable Plasmon Resonances and Intense Field Enhancements for Surface-Enhanced Raman Scattering
摘要： Plasmonic metal nanostructures with nanogaps have attracted great interest owing to their controllable optical properties and intense electromagnetic fields that can be useful for a variety of applications, but precise and reliable control of nanogaps in three-dimensional nanostructures remains a great challenge. Here, we report the control of nanojunctions of hollow porous gold nanoshell (HPAuNS) structures by a facile oxygen plasma-etching process and the influence of changes in nanocrevices of the interparticle junction on the optical and sensing characteristics of HPAuNSs. We demonstrate a high tunability of the localized surface plasmon resonance (LSPR) peaks and surface-enhanced Raman scattering (SERS) detection of rhodamine 6G (R6G) using HPAuNS structures with different nanojunctions by varying the degree of gold sintering. As the neck region of the nanojunction is further sintered, the main LSPR peak shifts from 785 to 1350 nm with broadening because the charge transfer plasmon mode becomes more dominant than the dipolar plasmon mode, resulting from the increase of conductance at the interparticle junctions. In addition, it is demonstrated that an increase in the sharpness of the nanojunction neck can enhance the SERS enhancement factor of the HPAuNS by up to 4.8-fold. This enhancement can be ascribed to the more intense local electromagnetic fields at the sharper nanocrevices of interparticle junctions. The delicate change of nanojunction structures in HPAuNSs can significantly affect their optical spectrum and electromagnetic field intensity, which are critical for their practical use in a SERS-based analytical sensor as well as multiple-wavelength compatible applications.
关键词： sintering,plasma etching,nanoporous gold,nanocrevice junction,surface-enhanced Raman scattering,plasmonic nanostructure
更新于2025-09-16 10:30:52
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Selective seed layer patterning of PVD metal stacks by electrochemical screen printing for solar cell applications
摘要： A proof of principle for electrochemical screen printing (ESP) as a patterning process for thin metal stacks that can be employed, eg, in interdigitated back contact (IBC) or silicon heterojunction (SHJ) solar cells, is demonstrated. By using the ESP process, a 125 × 125‐mm2 interdigitated back contact grid was successfully patterned into a 100‐nm physical vapor deposited (PVD) aluminum layer. Optimizations of the ESP process were performed to improve the patterning resolution. Rectangular trenches with a mean width of 36 ± 5 μm could be demonstrated on a 100‐nm–thick aluminum layer. Up to now, ESP can be applied to PVD aluminum, copper, or stacks of both materials. Finally, metal stacks of aluminum and copper were structured, which allow a more homogeneous current distribution for the ESP process and additionally for the subsequent copper electroplating because of the second metal layer underneath the layer to be structured. The successful transfer from wafer substrate to polymer foils increases the application options of ESP technology enormously, where the topography of the surface to be structured affects the printing results.
关键词： silicon,screen printing,flexible circuit board,plating,interdigitated back contact (IBC) solar cell,electrochemical etching,water‐based printing paste,Al/Cu stack
更新于2025-09-16 10:30:52
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Enhanced metal assisted etching method for high aspect ratio microstructures: Applications in silicon micropillar array solar cells
摘要： A solar cell device, fabricated on high density array cylindrical pillars, enables photogenerated carrier collection in the radial direction, thus shortening the path length of the carriers reaching the junction. It also provides advantages over conventional planar junction solar cells, such as reduced surface re?ectance and enhanced light trapping. In this study, highly ordered Si micropillars were fabricated by photolithography and metal assisted etching (MAE) methods. It is shown that the use of ethanol as a solvent during the etching process and increasing HF concentration in the MAE solution both improve the quality of the surfaces of the pillars. Micropillars with smooth sidewalls and a high aspect ratio were obtained in this way. Solar cells with a radial junction were then fabricated on these micropillars. Standard doping, SiO2/SiNx passivation, and metallisation steps were carried out for the fabrication of solar cells with di?erent micropillar lengths. A signi?cant decrease in re?ectance values was observed as the micropillar length increased, as expected. Solar cell short circuit current density (Jsc) and e?ciency (η) of the solar cells tended to increase with micropillar length up to 11.5 μm and then decrease due to increased surface recombination. The maximum e?ciency achieved in this study is 17.26%.
关键词： Solar cell,Ethanol,Micropillar,Metal assisted etching,High aspect ratio,Radial junction
更新于2025-09-16 10:30:52