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Enhancement of dopant solubility in compound semiconductors during crystal growth
摘要： Doping of semiconductors is a process of intentionally incorporating impurity into the materials to adjust and optimize the electrical properties during the processing of semiconductors. The doping level has certain upper limit, which is usually corresponding to the solubility of the dopant in the host material under processing conditions. Sometimes, the maximum solubility level is still not high enough to provide the desired opto-electronic properties and a higher doping level is needed. Hence, enhancing the dopant level is one of the critical issues in the semiconductor industry, especially for those advanced devices made from compound semiconductors, including binary, ternary, as well as multi-component compounds. In this report, we designed a processing method, by simply varying a processing parameter during melt growth, to increase the doping level in the compound semiconductors well above the maximum values obtained under otherwise regular processing procedures and demonstrated it in the melt growth of Cl-doped PbTe.
关键词： Dopant,Lead telluride,Directional solidification,Solubility
更新于2025-09-23 15:21:21
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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Stable Operation of an Automotive Photovoltaic System under Moving Shadows
摘要： This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to derive an analytical model to compute the standard deviation, σ Vth,RDD of the Vth-distribution for any arbitrary channel doping profiles. The model shows that the Vth-variability in JFETs depends on the active device area, channel doping concentration, and the depth of the channel depletion region of the gate/channel pn-junction. The model is applied to compute σ Vth,RDD for symmetric and asymmetric source/drain double-gate n-channel JFETs. The simulation results show that the model can be used for predicting Vth-variability in JFETs.
关键词： statistical dopant fluctuations,random discrete doping,process variability in JFETs,modeling threshold voltage variability,JFET threshold voltage variability,Junction field-effect transistor (JFET)
更新于2025-09-23 15:21:01
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Fabrication and characterization of Mg-doped ?μ-Ga2O3 solar-blind photodetector
摘要： In this work, Mg-doped ε-Ga2O3 (3.38 cation % of Mg) solar-blind photodetector is fabricated by using radio-frequency magnetron sputtering and metal-organic chemical vapor deposition methods on sapphire substrate. The results show that the Mg-doped ε-Ga2O3 thin film solar-blind photodetector exhibit a photo-to-dark current ratio of 1.68 102, responsivity of 77.2 mA/W, specific detectivity of 2.85 1012 Jones, and external quantum efficiency of 37.8 % at 5 V under 40 μW/cm2 254 nm ultraviolet light illumination, as well as the stable light switching property driven by different applied voltages and light intensities. The achieved Mg-doped ε-Ga2O3 solar-blind photodetector is promised to advance relevant developments of the metastable Ga2O3 optoelectronic devices.
关键词： MOCVD,solar-blind,Mg dopant,magnetron sputtering,ε-Ga2O3
更新于2025-09-23 15:21:01
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Nona??Conjugated Polymer Based on Polyethylene Backbone as Dopanta??Free Holea??Transporting Material for Efficient and Stable Inverted Quasia??2D Perovskite Solar Cells
摘要： Novel non-conjugated polymer based on polyethylene backbone, PVCz-OMeTPA with suitable energy levels, good hole mobility as well as excellent film-forming ability assisting the formation of high-quality perovskite films, is developed as efficient dopant-free hole-transporting materials (HTMs) for inverted quasi-2D perovskite solar cells (PSCs). Quasi-2D PSCs using ultra-thin, dopant-free PVCz-OMeTPA as HTM exhibited excellent power conversion efficiency of 17.22% and long-term environmental stability.
关键词： low-cost,quasi-2D perovskite solar cells,main-chain non-conjugated polymer,dopant-free hole-transporting materials
更新于2025-09-23 15:21:01
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Highly Stable and Efficient Perovskite Solar Cells with 22.0% Efficiency Based on Inorganic-Organic Dopant-Free Double Hole Transporting Layers
摘要： Most of the high performance in perovskite solar cells (PSCs) have only been achieved with two organic hole transporting materials: 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene (Spiro-OMeTAD) and poly(triarylamine) (PTAA), but their high cost and low stability caused by the hygroscopic dopant greatly hinder the commercialization of PSCs. One effective alternative to address this problem is to utilize inexpensive inorganic hole transporting layer (i-HTL), but obtaining high efficiency via i-HTLs has remained a challenge. Herein, a well-designed inorganic–organic double HTL is constructed by introducing an ultrathin polymer layer dithiophene-benzene (DTB) between CuSCN and Au contact. This strategy not only enhances the hole extraction efficiency through the formation of cascaded energy levels, but also prevents the degradation of CuSCN caused by the reaction between CuSCN and Au electrode. Furthermore, the CuSCN layer also promotes the formation of a pinhole-free and compact DTB over layer in the CuSCN/DTB structure. Consequently, the PSCs fabricated with this CuSCN/DTB layer achieves the power conversion efficiency of 22.0% (certified: 21.7%), which is among the top efficiencies for PSCs based on dopant-free HTLs. Moreover, the fabricated PSCs exhibit high light stability under more than 1000 h of light illumination and excellent environmental stability at high temperature (85 °C) or high relative humidity (>60% RH).
关键词： dopant-free,high efficiency,stabilities,perovskite solar cells,double hole transporting layers
更新于2025-09-23 15:21:01
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Establishing a new hot electrons transfer channel by ion doping in plasmonic metal/semiconductor photocatalyst
摘要： A straightforward strategy is developed to improve the injection efficiency of hot electrons in Ag/TiO2 plasmonic photocatalyst by introducing the Fe dopant. The Fe dopant energy level formed within the bandgap of TiO2 provides an extra electron transfer channel for transferring the hot electrons induced by plasmonic Ag nanoparticles.
关键词： hot electrons,plasmonic photocatalyst,Ag nanoparticles,TiO2,Fe dopant
更新于2025-09-23 15:21:01
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On the role of magnesium in LiF:Mg,Ti thermoluminescent dosimeter
摘要： LiF doped with Mg and Ti is the most widely used thermoluminescent (TL) dosimeter for a large variety of applications. It has been argued that the Mg dopant is the most important defect in the TL process. Besides the common F-centre defects in LiF, optical absorption measurements have suggested the presence of Mg-related absorption bands at 380 nm (3.26 eV), and 310 nm (4.0 eV) when LiF:Mg is exposed to ionizing radiation, whose origin is not yet well understood. This work presents an investigation of the role of defects induced by Mg in LiF through electronic structure calculations. The calculations show that Mg interstitials induce a local lattice distortion characterized by the displacement of two opposite fluorine atoms, adjacent to the magnesium, away from their original sites by an average distance of 0.6 ? each, while the closest Li atoms are displaced by 0.1 ?. This defect introduces electronic states in the band-gap that can trap excess electrons produced during irradiation, thus enhancing the efficiency of the detector. Holes, on the other hand, are created and trapped in orbitals of mainly Mg-3s character. Additionally, the results suggest that irradiation can simultaneously remove a Li atom nearby a Mg interstitial; substitute a Li by a Mg atom or create a Li vacancy plus a Mg substitutional, giving rise to defects within the LiF gap that are more stable thermodynamically than the Mg interstitial itself.
关键词： magnesium dopant,LiF:Mg,Ti,thermoluminescent dosimeter,electronic structure calculations,defect states
更新于2025-09-23 15:21:01
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs
摘要： We present a systematic investigation of random dopant fluctuations and random telegraph noise instabilities in Nanowire and Macaroni MOSFETs via 3D atomistic Monte Carlo simulations. We discuss their dependence on geometry and doping and show that different trends appear with respect to planar devices. Some unexpected results are explained in terms of 3D percolation and electrostatic integrity of the structures.
关键词： Macaroni MOSFET,Nanowire MOSFET,random telegraph noise,random dopant fluctuations
更新于2025-09-23 15:21:01
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Synthesis and Application of Fe-Doped WO3 Nanoparticles for Photocatalytic Degradation of Methylparaben Using Visible–Light Radiation and H2O2
摘要： Synthesis of WO3 and Fe-doped WO3 nanoparticles is done by use of Microwave irradiation technique. X-ray powder diffraction confirmed the formation of a monoclinic crystalline structure. The as-prepared samples are characterised by transmission electron microscope, Braunuer, Emmett and Teller, Raman spectroscopy, photoluminescence, X-ray photoelectron spectroscopy and ultraviolet diffuse reflectance spectroscopy. Confirmation of the morphology of the nanostructures showed ovoid-like form. The photocatalytic activity of WO3 and nominal percentage of Fe-doped WO3 (3, 5 and 10 wt%) are evaluated for the degradation of methylparaben (MeP) in aqueous solution after being irradiated with visible light. The results show that 5 wt% Fe–WO3 is the best dopant in the photodegradation of MeP at 50.8% with H2O2. A chemometric model analysis is applied to estimate both individual and interaction factors that included pH, contact time, hydrogen peroxide (H2O2) concentration and catalyst dosage. The optimal conditions at pH 3, 10 mg, 5 wt% Fe–WO3 and 120 min are achieved.
关键词： Nanostructures,Dopant,Microwave,Methylparaben,Photodegradation
更新于2025-09-23 15:21:01
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Lithography-free and dopant-free back-contact silicon heterojunction solar cells with solution-processed TiO2 as the efficient electron selective layer
摘要： Lithography-free interdigitated back-contact silicon heterojunction (IBC-SHJ) solar cells with dopant-free metal oxides (TiO2 and MoOx) as the carriers selective transport layers were investigated. Spin-coating and hot-wire reactive-sublimation deposition together with low cost mask technology were used to fabricate the solar cells. Insertion of a SiOx layer with the thickness of about 2.4 nm between the intrinsic amorphous Si (a-Si:H(i)) passivation layer and the spin-coated TiO2 layer greatly improves the solar cell performance due to the enhanced field-effect passivation of the a-Si:H(i)/SiOx/TiO2 layer stack. Efficiency up to 20.24% was achieved on the lithography-free and dopant-free IBC-SHJ devices with a-Si:H(i)/SiOx/TiO2 layer stack as the electron selective transport layer, a-Si:H(i)/MoOx as the hole selective transport layer, and WOx as the antireflection layer. The novel IBC-SHJ solar cells show significant advantages in simplification of the technology and process compared with the IBC-SHJ devices whose back surface pattering and carrier selective layers relied on photolithography and plasma enhanced chemical vapor deposition (PECVD).
关键词： Heterojunction,Dopant-free,Back-contact,Lithography-free,Passivation
更新于2025-09-23 15:19:57