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Low Frequency Noise Characteristics in Multilayer MoTe2 FETs with Hydrophobic Amorphous Fluoropolymers
摘要： This paper investigates the low-frequency noise (LFN) properties of multilayer MoTe2 field effect transistors (FETs) before and after hydrophobic amorphous polymer (CYTOP) encapsulation in the subthreshold and linear regimes. Noise spectrum density of drain current (SID) shows that the low-frequency noise in multilayer MoTe2 FETs nicely fits to a 1/fγ power law with γ～1 in the frequency range of 10 Hz to 200 Hz. From the dependence of SID on the drain current, carrier number fluctuation(Δn) is considered as a dominant low frequency noise mechanism from all operation regimes in multilayer MoTe2 FETs. Extracted trap density(Nt) based on McWhorter model in this study was reduced at least more than one order level, as compared to multilayered MoTe2 FETs without CYTOP passivation.
关键词： CYTOP,1/f noise,MoTe2 FETs
更新于2025-09-23 15:23:52
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Biaxial Strain based Performance Modulation of Negative-Capacitance FETs
摘要： In this work, we report device simulations conducted to study the performance of biaxially strained ferroelectric-based negative capacitance FETs (NCFETs). We adopted PbZr0.5Ti0.5O3 (PZT) and HfO2 as ferroelectric materials and applied biaxial strain using the first-principles method. It was found that PZT and HfO2 show different trends in the negative capacitance (NC) region under biaxial strain. Biaxial strain strongly affects the NC of PZT, whereas HfO2 is not as susceptible to biaxial strain as PZT. When no strain is applied, HfO2-based NCFETs exhibit a better performance than PZT-based NCFETs. However, the subthreshold slope and ON-state current are improved in the case of PZT-based NCFETs when the compressive biaxial strain is increased, whereas the performance of HfO2-based NCFETs is slightly degraded. In particular, the negative drain-induced barrier lowering and negative differential resistance vary considerably when compressive strain is applied to PZT-based NCFETs.
关键词： strain,negative capacitance FETs,ferroelectrics,density functional theory,HfO2,PZT
更新于2025-09-23 15:22:29
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Improvement of Conversion Loss of Resistive Mixers Using Bernal-stacked Bilayer Graphene
摘要： In this letter, we present dual-gate Bernal-stacked bilayer graphene FETs which are used for gate-pumped resistive mixers. The results show that conversion loss improves when the device on/off ratio increases. At 2 GHz, a record conversion loss of 12.7 dB has been obtained from 160 nm device among graphene resistive mixers. Furthermore, more than 10 dB change of conversion loss has been obtained by adjusting the electric displacement field by dual-gate voltage. Finally, high-temperature characteristics of this type of graphene mixer exhibit excellent thermal stability with only 2 dB degradation in conversion loss from 300 to 380 K. This result shows the Bernal-stacked bilayer graphene mixer is promising for low-loss and high-temperature radio frequency circuit applications.
关键词： conversion loss,high temperature,bilayer graphene,resistive mixer,FETs
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Common Mode Noise Analysis for a High Step-Up Converter with GaN Devices
摘要： High Step-up converters have numerous applications in renewable energy systems and electric automotive industry. To improve the power density, an interleaved high step-up boost converter with coupled inductor was proposed. However, for practical applications is compulsory that this topology must comply with the CISPR standards. Therefore, to identify the noise sources in the analyzed converter, an equivalent noise modelling is conducted. These models revealed the dependency of inductor windings on different noise sources. For experimental analysis of the conducted emissions of this topology, GaN FETs based prototype is designed. Several tests were carried out to find the effect of various factors on noise emission. As results of tests, 1) Increasing the switching frequency generates increase in the noise spikes 2) Noise emissions from the converter do depend on its mode of operation 3) High peaks of noise are generated at low frequency range by reducing the voltage transition time across the switch.
关键词： Coupled-Inductor,High Step-Up,GaN FETs,CM Noise,DC-DC Converter,EMI Noise
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Local Modification of Defective Edge Hamiltonian for Graphene Nanoribbon Devices
摘要： The impact of edge defect on C-C bond is revealed to be localized in short range by ab initio calculation. Thus we propose a the tight-bind (TB) Hamiltonian. Except for the edge parameter correction, local C-C bond distortion and the diversity of different armchair GNRs. It is demonstrated that this method significantly reduces TB fitting errors with two typical GNR edge defects. In addition, using the modified Hamiltonian, device simulation results are shown.
关键词： tight-binding (TB) Hamiltonian,local modification,Graphene nanoribbon FETs (GNR FETs),edge defect
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared
摘要： An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit. It is fully extracted from S-parameters and IV curves. The final result are closed-form expressions for the frequency dependence of the noise equivalent power (NEP) in terms of the FET intrinsic capacitances and parasitic resistances. Excellent model agreement to measured NEP of coplanar access graphene FETs with varying channel dimensions up to 67 GHz is obtained. The influence of gate length on responsivity and NEP is theoretically and experimentally studied.
关键词： field-effect transistors (FETs),Volterra,terahertz detectors,microwave detectors,graphene,power detectors,Analytical model
更新于2025-09-23 15:21:01
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<i>(Invited) The Scaling-Down and Performance Optimization of InAs Nanowire Field Effect Transistors</i>
摘要： Due to their fascinating properties, InAs nanowires have drawn great attention for the channel material in future transistors. Scaling-down has been an effective way to improve the performance of transistors continuously for decades. Here, we review our recent progresses on InAs nanowire field effect transistors (FETs) when they are scaled down. Our group investigates the electrical characteristics of InAs nanowire thinner than 10 nm. Both the size-effect and the contact properties of ultrathin nanowires are explored. Moreover, the effects of InAs crystal phase and orientation are studied for further optimizing the device performance. In addition, FETs with partial gate are studied to suppress the BTBT-induced off-current. Furthermore, to improve the electrostatics control of the gate, our group develops a method to fabricate vertical GAA FETs with all-metal electrodes based on self-catalyzed grown InAs nanowire arrays.
关键词： orientation,crystal phase,performance optimization,field effect transistors,partial gate,vertical GAA FETs,InAs nanowires,scaling-down
更新于2025-09-23 15:21:01
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[IEEE ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC) - Dresden, Germany (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET
摘要： This study reports the interfacial engineering by means of SAM (Self-assembled monolayer)-based gate dielectric on channel mobility in molybdenum disulfide (MoS2) field-effect transistors (FETs). A gated four-probe method was implemented to eliminate the effect of contact resistance on channel mobility. The formation of SAM significantly plays an important role in the improvement of channel mobility as high as 19 cm2/Vs in MoS2 FETs because the superior interfacial properties can be realized in MoS2/SAM structure. This study opens up interesting direction of interface engineering for research in the applications and developments of 2-dimensional materials-based thin film devices.
关键词： FETs,Interface properties,Channel mobility,Self-assembled monolayer,MoS2
更新于2025-09-23 15:21:01
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Nanoscale Transfer Printing for the Heterogeneous Integration of Semiconductor Nanowire Lasers
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks
更新于2025-09-19 17:13:59
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[IEEE 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Grenoble, France (2019.4.1-2019.4.3)] 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Nanowire & Nanosheet FETs for Ultra-Scaled, High-Density Logic and Memory Applications
摘要： We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around (GAA) FET devices as promising candidates to obtain a better power-performance metric for logic applications for advanced sub-5nm technology nodes, in comparison to finFETs. In addition, vertical NW/NS GAA FETs appear particularly attractive for enabling highly dense memory cells such as SRAMs (with improved read and write stability), and as the selector devices for ultra-scaled MRAMs with lower energy consumption values. These cells can be manufactured by a cost-effective, co-integration scheme with a finFET or NW/NS FET high-performance logic platform for increased on-chip memory content.
关键词： lateral and vertical nanowire and nanosheet gate-all-around FETs,memory,CMOS,logic,scaling,MRAM
更新于2025-09-19 17:13:59