- 标题
- 摘要
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- 实验方案
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Facile enhancement of optical sensitivity in GaN ultraviolet photodetectors by using in-situ plano-convex polymer lens
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,frequency conversion,FETs,millimeter wave communication,InP,graphene,HEMTs,radio access networks
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Solution-processed ultrathin SnO <sub/>2</sub> passivation of Absorber/Buffer Heterointerface and Grain Boundaries for High Efficiency Kesterite Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Solar Cells
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,radio access networks,graphene,FETs,HEMTs,InP,millimeter wave communication,frequency conversion
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Numerical modeling and experimental realization of wide bandgap ZnTe-based solar cells for semi-transparent PV application
摘要： InP-based high electron mobility transistors (InP-HEMTs) and graphene-channel FETs (G-FETs) are experimentally examined as photonic frequency converters for future broadband optical and wireless communication systems. Optoelectronic properties and three-terminal functionalities of the InP-HEMTs and G-FETs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A 10 Gbit/s-class data signal on a 112.5 GHz carrier is mixed down to a 25 GHz IF band with an 87.5 GHz LO signal that is simultaneously self-generated from an optically injected photomixed beat note. The results suggest that the intrinsic channel of the G-FET can achieve a speed performance that is superior to that of an InP-HEMT having an equivalent device feature size. The reduction of the extrinsic parasitic resistances and the implementation of an efficient photo-absorption structure in the G-FET may allow a millimeter-wave and sub-THz photonic frequency conversion with a sufficiently high conversion gain for practical purposes.
关键词： millimeter wave photonics,radio access networks,graphene,FETs,HEMTs,InP,millimeter wave communication,frequency conversion
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Plug-and-Play Generation and Manipulation of Squeezing on Chip
摘要： We propose a novel graphic method to enable the analysis of the field-effect transistor (FET) threshold voltage variation (cid:2)Vth due to random telegraph signals in a percolative channel. First, through technology computer-aided design simulation with no percolation, both a minimum (cid:2)Vth and a critical curve in a mloc ? σloc plot are produced. The former constitutes a statistical distribution far away from the conventional log-normal one. In the latter, mloc and σloc are the mean and the standard deviation, respectively, of a well-known normal variable in Mueller–Schulz’s percolation theory. The critical mloc ? σloc curve divides the plot into the allowed region and the forbidden region and will go down with increasing gate size. Then, (cid:2)Vth contours in the allowed region are graphically created. While applying to existing experimental (cid:2)Vth statistical distributions of SiON- and high-k metal gate (HKMG)-scaled FETs, resulting paired mloc and σloc at high (cid:2)Vth remain intact, regardless of gate size or gate stack type. This means that the underlying percolation patterns resemble each other, due to the same manufacturing process used. However, if these paired mloc and σloc fall in the forbidden region, it is the critical mloc ? σloc curve dominating. Application to bias and temperature instability statistical data in literature is straightforwardly well done.
关键词： percolation,technology computer-aided design (TCAD),Bias and temperature instability (BTI),trap,random telegraph signals (RTSs),field-effect transistors (FETs)
更新于2025-09-16 10:30:52
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Layer-Dependent Optoelectronic Properties of 2D van der Waals SnS Grown by Pulsed Laser Deposition
摘要： Layered metal monochalcogenides have attracted significant interest in the 2D family since they show different unique properties from their bulk counterparts. The comprehensive synthesis, characterization, and optoelectrical applications of 2D-layered tin monosulfide (SnS) grown by pulsed laser deposition are reported. Few-layer SnS-based field-effect transistors (FETs) and photodetectors are fabricated on Si/SiO2 substrates. The premium 2D SnS FETs yield an on/off ratio of 3.41 × 106, a subthreshold swing of 180 mV dec?1, and a field effect mobility (μFE) of 1.48 cm2 V?1 s?1 in a 14-monolayer SnS device. The layered SnS photodetectors show a broad photoresponse from ultraviolet to near-infrared (365–820 nm). In addition, the SnS phototransistors present an improved detectivity of 9.78 × 1010 cm2 Hz1/2 W?1 and rapid response constants of 60 ms for grow-time constant τg and 10 ms for decay-time constant τd under extremely weak 365 nm illumination. This study sheds light on layer-dependent optoelectronic properties of 2D SnS that promise to be important in next-generation 2D optoelectronic devices.
关键词： phototransistors,field effect transistors,2D materials,tin monosulfide,p-type FETs
更新于2025-09-11 14:15:04
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Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
摘要： Herein, GaN driver FETs with a high energy bandgap are employed in photosensitive inverters to eliminate light-shield layers (LSLs). This configuration exhibits full-swing characteristics of photosensitive inverters comprised of multi-layered MoS2 FETs loads in photosensitive pseudo-depletion mode. The GaN FETs provide both high current drivability and excellent photo-leakage immunity under visible light (Eg~3.1 eV). This allows the photosensitive inverters to be successfully operational without LSLs. The relative degradation (%) of voltage gain for photosensitive inverters with GaN drivers from dark to blue light exposure is improved from 67.7% to 53.0 %, as compared to previously reported MoS2 inverters with LSLs.
关键词： light-shield layers (LSLs),GaN FETs,photosensitive inverters,MoS2 FETs,biosensors,low noise margin
更新于2025-09-09 09:28:46
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Gallium Oxide || Growth, properties, and applications of β-Ga2O3 nanostructures
摘要： This chapter provided a brief overview for β-Ga2O3 nanostructures from a growth aspect to device applications. The outstanding properties of β-Ga2O3 such as large bandgap, high breakdown field, thermal and chemical stability, along with advantageous properties due to its nanostructures morphology such as large surface-to-volume ratio, fewer defects, and less strain makes it a potential material for development of high-performance nanoscale devices. β-Ga2O3 nanostructures have shown great promise for nanoscale devices such as deep-UV photodetectors, gas sensors, and FETs. In addition, functional nanowires based on β-Ga2O3 nanostructures can also be utilized for establishing the nanoscale device platform.
关键词： device applications,photodetectors,FETs,β-Ga2O3 nanostructures,gas sensors,growth techniques
更新于2025-09-09 09:28:46
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) van der Waals Heterojunctions
摘要： Van der Waals heterojunctions (vdWHs) have gained extensive attention because they can integrate the excellent characteristics of the stacked materials and most vdWHs exhibit type-II band alignment. However, type-III vdWHs with broken gaps are still very rare, which limits the development and application of two-dimensional (2D) materials in the fields of tunnel FETs (TFETs). Here, we theoretically demonstrate that 2D phosphorene/SnS2 (SnSe2) vdWHs possess type-III (broken-gap) band alignment, and their I-V curves present negative differential resistance (NDR) effects. The BTBT transport mechanism and its applications in TFETs are analyzed. Interestingly, a positive electric field can enlarge the tunnelling window and a negative electric field can realize multiple-band-alignment transformation (type I, type II, and type III). Thus, this work presents the intrinsic physics mechanism and electric field tunable multiple-band alignments in 2D type-III vdWHs and related electronic devices.
关键词： tunnel FETs,SnS2,phosphorene,type-III band alignment,Van der Waals heterojunctions,electric field,SnSe2
更新于2025-09-09 09:28:46
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Effects of parasitic capacitance on both static and dynamic electrical characteristics of back-gated two-dimensional semiconductor negative-capacitance field-effect transistors
摘要： Negative-capacitance ?eld-e?ect transistors (NC-FETs) are a promising candidate for future low-power Internet of Things (IoT) applications. In this work, a uni?ed analytical drain-current model for back-gated two-dimensional (2D) NC-FETs has been proposed for both static and dynamic is calibrated to experimental data. E?ects of parasitic capacitance on both the static and dynamic electrical simulations, and this model characteristics of back-gated 2D NC-FETs are investigated systematically on the basis of the model. It is found that parasitic capacitance contributes to the reduction in subthreshold swing but leads to a larger dynamic hysteresis. Thus, a balance between both should be carefully taken into account.
关键词： Negative-capacitance ?eld-e?ect transistors,NC-FETs,dynamic hysteresis,subthreshold swing,parasitic capacitance
更新于2025-09-09 09:28:46
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - First and Second Order Piezoresistive Characteristics of CMOS FETs: Weak through Strong Inversion
摘要： Experimental results validate a continuous model describing the stress dependencies of CMOS FETs from weak through strong inversion. The model incorporates the significant impact of threshold voltage changes (through ni2) on the stress responses in all regions of operation and describes both first- and second-order longitudinal and traverse piezoresistive coefficients for PMOS and NMOS devices. Orthogonal differential pairs of MOSFETs can be utilized to directly measure the mobility component of the overall stress response.
关键词： threshold voltage,piezoresistive characteristics,CMOS FETs,stress dependencies,mobility variations
更新于2025-09-04 15:30:14