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Near-ultraviolet Raman and micro-Raman analysis of electronic materials
摘要： Raman and micro-Raman analysis methods have been extensively investigated for the study of materials used in electronic and photonic devices. Raman studies are used to understand fundamental phonon properties, along with effects related to the crystal structure, disorder, doping, and external factors such as temperature and stress. Micro-Raman extends these investigations to the micron scale. This article reviews diverse benefits of Raman measurements when carried out using laser excitation in the near-ultraviolet wavelength range, nominally 400 to 325 nm. Micro-Raman methods in the near ultraviolet exploit the key advantage of reduced focal spot size, achievable at shorter wavelengths when using diffraction-limited optics, for mapping with high spatial resolution. There are distinct advantages common to Raman and micro-Raman spectroscopy in the near ultraviolet when compared to the widely used visible excitation. One advantage exploits the shallower optical penetration depth in select materials for probing near-surface regions or interfaces. A second advantage is related to tuning of the excitation photon energy relative to the electronic levels of a material for investigating resonance effects. Finally, the application of Raman scattering to materials which exhibit strong fluorescence requires tuning to a wavelength range away from the potentially obscuring emission. This article overviews several examples of these key advantages to study diverse applied physics problems in electronic and photonic materials. Topics covered include stress mapping in silicon and related materials, stress and thermal effects in gallium nitride and other group-III-nitride semiconductors, and carbon materials ranging from graphite and graphene to diamond grown using chemical vapor deposition. The fundamental effects of stress- and temperature-induced shifts in phonon energies and their application to study epitaxy and device-related effects are also briefly reviewed.
关键词： near-ultraviolet,stress mapping,carbon materials,chemical vapor deposition,phonon properties,Raman spectroscopy,electronic materials,micro-Raman,gallium nitride
更新于2025-09-23 15:21:01
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Raman and photoluminescence spectral studies in double perovskite epitaxial Nd2CoMnO6 thin films deposited by pulse laser deposition
摘要： The detailed temperature dependent optical properties in double perovskite type Nd2CoMnO6-SrTiO3 (NCMO-STO) thin films have been investigated the experimentally grown epitaxial thin films on STO substrates using pulsed laser deposition technique. At first order room temperature, a Raman spectrum of NCMO/STO thin films are measured in unpolarized geometry using 488 nm laser excitation and confirms its monoclinic bulk like crystal structure. Temperature dependent Raman spectra confirms the appearance of a sharp, intense phonon mode below magnetic ordering, signifies structural phase transition accompanied by magnetic transition. The phonon mode position and line-width are fitted by anharmonic model and found to be strongly softened phonon mode position below TC and strong spin-phonon coupling in the system. The excitation spectrum and the bandgap in NCMO film confirms the yellow emission resulting from energy transfer within the non- centrosymmetric structure.
关键词： Optical properties,Thin films,Photoluminescence spectroscopy,Raman spectroscopy
更新于2025-09-23 15:21:01
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Controlled Quantum-Dot Formation in Atomically-Engineered Graphene Nanoribbons Field-Effect Transistors
摘要： Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size (< 50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5-nm nanogap. We demonstrate that the narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNRs is accounted for. By demonstrating the preservation of the 5-AGNRs molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realisation of more exotic GNR-based nano-electronic devices.
关键词： graphene nanoribbons,Coulomb blockade,molecular spectroscopy,device integration,Raman spectroscopy
更新于2025-09-23 15:21:01
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Epitaxial Growth of Monolayer MoS <sub/>2</sub> on SrTiO <sub/>3</sub> Single Crystal Substrates for Applications in Nanoelectronics
摘要： Monolayer molybdenum disulfide (MoS2) crystals grown on amorphous substrates such as SiO2 are randomly oriented. However, when MoS2 is grown on crystalline substrates, the crystal shapes and orientations are also influenced by their epitaxial interaction with the substrate. In this paper we present the results from chemical vapor deposition growth of MoS2 on three different terminations of single crystal strontium titanate (SrTiO3) substrates. On SrTiO3(111) the monolayer MoS2 crystals form equilateral triangles with two main orientations, in which they align their <21?1?0>-type directions (i.e., the sulfur-terminated edge directions) with the <11?0>-type directions on SrTiO3. This arrangement allows near perfect coincidence epitaxy between seven MoS2 unit cells and four SrTiO3 unit cells. On SrTiO3(110) the MoS2 crystals tend to align their edges with both <11?0> and <11?2?> directions on SrTiO3 as these both provide favorable coincidence lattice registry. This distorts the crystal shapes and introduces an additional strain detectable by photoluminescence. When triangular MoS2 crystals are grown on SrTiO3(001), they again show a preference to align their edges with the <11?0> directions on SrTiO3. Our observations can be explained if the interfacial van der Waals (vdW) bonding between MoS2 monolayers and SrTiO3 is greatest when the maximum commensuration between the lattices is achieved. Therefore, a key finding of this paper is that the vdW interaction between MoS2 and SrTiO3 substrates determines the supported crystal shapes and orientations by the epitaxial relations. Controlled crystal orientations make the growth of large sheets of MoS2 possible when there are multiple nucleation sites. This minimizes the number of grain boundaries and optimizes electronic properties of the material, e.g., charge mobility, which is crucial for the application of monolayer MoS2 in next-generation nanoelectronic devices.
关键词： Raman spectroscopy,van der Waals epitaxy,scanning tunneling microscopy,SrTiO3,2D materials,chemical vapor deposition,MoS2,photoluminescence spectroscopy
更新于2025-09-23 15:21:01
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Thermal stability study of transition metal perovskite sulfides
摘要： Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lattice thermal conductivity and smaller band gap, making them promising material candidates for high temperature thermoelectrics. Thus, it is necessary to study the thermal properties of these materials in detail, especially thermal stability, to evaluate their potential. In this work, we report the synthesis and thermal stability study of five compounds, a-SrZrS3, b-SrZrS3, BaZrS3, Ba2ZrS4, and Ba3Zr2S7. These materials cover several structural types including distorted perovskite, needle-like, and Ruddlesden–Popper phases. Differential scanning calorimeter and thermogravimetric analysis measurements were performed up to 1200 °C in air. Structural and chemical characterizations such as X-ray diffraction, Raman spectroscopy, and energy dispersive analytical X-ray spectroscopy were performed on all the samples before and after the heat treatment to understand the oxidation process. Our studies show that perovskite chalcogenides possess excellent thermal stability in air at least up to 550 °C.
关键词： differential scanning calorimeter,thermoelectric materials,Transition metal perovskite chalcogenides,thermal stability,thermogravimetric analysis,Raman spectroscopy,Ruddlesden–Popper phases,X-ray diffraction,energy dispersive analytical X-ray spectroscopy
更新于2025-09-23 15:21:01
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Functional phase bistability in a nanocrystalline RbMn[Fe(CN)6] thin film fabricated by matrix-assisted laser evaporation
摘要： One of the main barriers hindering applications of Prussian blue metal assemblies is their poor processability, which makes the fabrication of intact thin films very difficult. In this work, a nanocrystalline RbMn[Fe(CN)6]·xH2O film on silicon substrate was obtained for the first time via laser-stimulated deposition and investigated. Temperature-induced phase transition and bistability within broad hysteresis loop (120 K), along with transition temperatures up to 317 K, which is the highest in the RbMnFe series, were observed using variable-temperature Raman spectroscopy. This study thus proposes a reliable deposition approach for preparing a functional magnetic materials that operate at room temperature.
关键词： Bistable-phase transition,Thin films,Laser deposition,Nanocrystalline materials,Raman spectroscopy
更新于2025-09-23 15:21:01
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Residual stress analysis of thin film photovoltaic cells subjected to massive micro-particle impact
摘要： Residual stresses play a crucial role in both light-electricity conversion performances and the lifespan of photovoltaic (PV) cells. In this paper, the residual stress of triple junction cells (i.e. GaInP/GaInAs/Ge) induced by laser-driven massive micro-particle impact is analyzed with a novel method based on backscattering Raman spectroscopy. The impact process, which induces damage to the PV cells and brings the residual stress, is also investigated by optical microscopy (OM) and Scanning Electron Microscopy (SEM). The results show that the PV cells would exhibit various damage patterns. At the same time, strong residual stresses up to hundreds of MPa introduced in the damaged PV cells after impact have been analysis, providing an effective perspective to better understand the damage behavior and residual stress features of PV cells during their service life.
关键词： Damage behavior,Residual stress,Photovoltaic cells,Micro-particle impact,Raman spectroscopy
更新于2025-09-23 15:21:01
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Sensitive and Direct DNA Mutation Detection by Surface-enhanced Raman Spectroscopy using Rational Designed and Tunable Plasmonic Nanostructures
摘要： Efficient DNA mutation-detection methods are required for diagnosis, personalized therapy development, and prognosis assessment for diseases such as cancer. To address this issue, we proposed a straightforward approach by combining active plasmonic nanostructures, surface enhanced Raman spectroscopy (SERS), and polymerase chain reaction (PCR), with a statistical tool to identify and classify BRAF wild type (WT) and V600E mutant genes. The nanostructures provide enhanced sensitivity, while PCR offers the high specificity towards target DNA. A series of positively charged plasmonic nanostructures including gold/silver nanospheres, nanoshells, nanoflowers and nanostars, were synthesized with a one-pot strategy and characterized. By changing the shape of nanostructures, we are able to vary the surface plasmon resonance from 551 nm to 693 nm. The gold/silver nanostar showed the highest SERS activity, which was employed for DNA mutation detection. We reproducibly analyzed as few as 100 copies of target DNA sequences using gold/silver nanostars, thus demonstrating the high sensitivity of the direct SERS detection. By means of statistical analysis (principal component analysis-linear discriminant analysis, PCA-LDA), this method was successfully applied to differentiate the WT and V600E mutant both from whole genome DNA (gDNA) lysed from cell line and from cell-free DNA (cfDNA) collected from cell culture media. We further proved that this assay is capable of specifically amplifying and accurately classifying a real plasma sample. Thus, this direct SERS strategy combined with the active plasmonic nanostructures has the potential for wide applications as an alternative tool for sensitively monitoring and evaluating clinical important nucleotide biomarkers.
关键词： PCR,statistical analysis,plasmonic nanostructures,surface-enhanced Raman spectroscopy,DNA mutation detection
更新于2025-09-23 15:21:01
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Optical phase change in bismuth through structural distortions induced by laser irradiation
摘要： Semimetal bismuth (Bi) is known to possess a wide range of peculiar properties, owing to its unique electronic band structure. Its electronic band can easily be distorted by structural changes, and thereby undergo transitions between semimetal to either semiconductor or metal states. Utilising a focused laser beam, one can easily introduce structural defects, along with phase changes, oxidation, and morphological modifications. Confocal Raman microscopy indicated that the as-fabricated Bi droplets inhibit the Raman signal from the underlying silicon (Si) substrate. After a laser flash heating step, the intensity of Si optical phonons was strongly enhanced at the positions of Bi droplets, and exceeding the intensity from the bare Si substrate. Thus, such laser irradiating step on the Bi droplets induces an optical phase change. The optical phase change was detected as going from inhibition to strong enhancement of the underlying Si substrate Raman signal. From the observed Bi optical phonon modes (Eg and A1g), alterations in the Raman peaks due to laser exposure indicated that the ordered crystallinity in pristine Bi droplets became deteriorated. The effects of atomic displacements and loss of structural order in Bi droplets impacts its dielectric response. The observed Si Raman signal enhancement is similar to the surface-enhanced Raman scattering effect typically known for noble metals.
关键词： phase change,Bismuth,structural defects,laser irradiation,Raman spectroscopy
更新于2025-09-23 15:21:01
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Mutated Human P-Selectin Glycoprotein Ligand-1 and Viral Protein-1 of Enterovirus 71 Interactions on Au Nanoplasmonic Substrate for Specific Recognition by Surface-Enhanced Raman Spectroscopy
摘要： Protein tyrosine sulfation is a common post-translational modification that stimulates intercellular or extracellular protein-protein interactions and is responsible for various important biological processes, including coagulation, inflammation, and virus infections. Recently, human P-selectin glycoprotein ligand-1 (PSGL-1) has been shown to serve as a functional receptor for enterovirus 71 (EV71). It has been proposed that the capsid viral protein VP1 of EV71 is directly involved in this specific interaction with sulfated or mutated PSGL-1. Surface-enhanced Raman spectroscopy (SERS) is used to distinguish PSGL-1 and VP1 interactions on an Au nanoporous substrate and identify specific VP1 interaction positions of tyrosine residue sites (46, 48, and 51). The three tyrosine sites in PSGL-1 were replaced by phenylalanine (F), as determined using SERS. A strong phenylalanine SERS signal was obtained in three regions of the mutated protein on the nanoporous substrate. The mutated protein positions at (51F) and (48F, 51F) produced a strong SERS peak at 1599–1666 cm?1, which could be related to a binding with the mutated protein and anti-sulfotyrosine interactions on the nanoporous substrate. A strong SERS effect of the mutated protein and VP1 interactions appeared at (48F), (51F), and (46F, 48F). In these positions, there was less interaction with VP1, as indicated by a strong phenylalanine signal from the mutated protein.
关键词： viral protein 1,P-selectin glycoprotein ligand-1,surface-enhanced Raman spectroscopy,nanoporous,phenylalanine
更新于2025-09-23 15:21:01