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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Characterization of Multilayered Ceramic Capacitors via Piezoelectric Force Microscopy
摘要： The coupling between an electrical and mechanical response in a material is a fundamental property that provides functionality to a variety of applications ranging from sensors and actuators to energy harvesting and biology. Most materials exhibit electromechanical coupling in nanometer-sized domains. Therefore, to understand the relationship between structure and function of these materials, characterization on the nanoscale is required. This property can be directly measured in a non-destructive manner using piezoelectric force microscopy (PFM), a mode that comes standard in all atomic force microscopes (AFMs) from Park Systems. Additionally, PFM can be used as a spectroscopic tool to evaluate switching of piezoelectric domains. Here we demonstrate the utility of PFM for failure analysis of a multilayered ceramic capacitor. Correlative imaging of topography and electrical signals revealed discontinuous structures in the device that likely had a direct effect on device performance. Spectroscopy was also performed at a specific piezoelectric region to measure domain properties, such as the electric field required to flip the polarization direction (coercive voltage).
关键词： topography,atomic force microscopy,multilayered ceramic capacitor,electromechanics,piezoelectric microscopy,polarization,failure analysis
更新于2025-09-23 15:23:52
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Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETs
摘要： This paper presents the impact of a short-circuit event on the gate reliability in planar SiC MOSFETs, which becomes more critical with increased junction temperature and higher bias voltages. The electrical waveforms indicate that a gate degradation mechanism takes place, showing a large gate leakage current that increases as the gate degrades more and more. A failure analysis has been performed on the degraded SiC MOSFET and then compared to the structure of a new device to identify possible defects/abnormalities. A Focused-Ion Beam cut is performed showing a number of differences in comparison to the new device: (i) cracks between the poly-silicon gate and aluminium source, (ii) metal particles near the source contact, and (iii) alterations in the top surface of the aluminium source. The defects have been correlated with the increase in gate-leakage current and drain-leakage current.
关键词： Focused-Ion Beam,Short circuit,Gate-oxide breakdown,Gate oxide,Degradation,Defects,Reliability,SiC MOSFET,Failure analysis,SEM
更新于2025-09-23 15:22:29
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Apply DFT Integrated Enhanced EBAC Methodology on Defect Isolations
摘要： Design for test (DFT) has been widely applied to digital circuit failure analysis (FA) in semiconductor industries. The FA methods based on DFT involve layer-by-layer checks using a polisher and an SEM for defect identification and localization. Yet these methods have limitations with high risks of sample damages. Besides, they are highly dependent on the technical proficiencies of operators and, thus, they are not effective for precise defect isolations. This problem has been aggravated, especially at advanced nodes. The nano-probing electron beam absorbed current (EBAC) has significant advantages on precisely locating defects. This technique is to directly identify specific defects without layer-by-layer checks. Therefore, it can minimize sample damages during sample pretreatment. EBAC is an efficient technique to isolate the defects when the circuit is at the floating condition. Because the ground lines exist almost everywhere in a chip and they are for, e.g., electronic static discharge charge releases or connecting with sources for pickup, EBAC becomes a natural option for us. However, due to poor EBAC images, EBAC’s applications are restricted when the circuits under test have grounding paths. In this paper, we propose two enhanced EBAC analysis methods, based on the DFT and EBAC integrated system, for the defect isolations with grounded connections. It is the first time the DFT and EBAC integrated system is reported, and we successfully demonstrated EBAC applicability by real FA cases.
关键词： Design for test (DFT),Grounding line,Fault isolation,Electron beam absorbed current (EBAC),Failure analysis (FA)
更新于2025-09-23 15:21:21
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Failure Analysis on Space Electronics: Best Practices, Challenges and Trends
摘要： Failure Analysis (FA) concerns all the industrial domains. Nevertheless, it is important to underline similarities and differences that are encountered in space related activities. Even if the process is the same, there are many differences related to space domain. They are due to the very high quality and reliability of satellites their cost, their mission duration and no reparability of satellites in orbit. Failure Analysis pays a key role in quality assessment to balance the lack of statistical approaches for the very low volume spacecraft market. Usually, we have only one failed part to analyze, sometime none (satellite in orbit issue) while the expertise output, including corrective actions, is mandatory to avoid repetition of similar issues. FA for space covers the full range of parts, including Mechanical, material and Electrical, Electronic and Electromechanical (EEE) parts. The failed EEE components from connectors to commercial VLSI, are analyzed in our CNES facilities. We will illustrate the wide range of targets, from components to system, through some case studies, including VLSI. Increasing number of commercial VLSI is a big trend and challenge, forcing us to develop new "CAD less" techniques to deal with the lack of netlist and layout for these critical complex devices.
关键词： Laser Stimulation,Satellite,Laucher,Expertise,Time Resolved Imaging,Laser Probing,VLSI,defect localization,Failure Analysis,Counterfeit,Integrated Circuits
更新于2025-09-23 15:21:01
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Failure analysis of 650?V enhancement mode GaN HEMT after short circuit tests
摘要： The paper presents the results of a post failure analysis performed on commercial 650 V GaN power HEMT after short circuit destructive tests. The used experiment set up includes a protection circuit able to avoid the explosion of the sample during the test. Moreover, it limits the energy involved in the failure and facilitates the identification of the areas where the failure is initiated. The post failure analysis confirms that DUTs exhibit two kinds of failures. In the first failure mode, for which large energies are dissipated in the device before the failure, the damaged area of the chip is quite large and is located close to external drain contacts. In this area, very likely, the temperature exceeds the melting temperature of the metallization. The second failure mode is observed for higher values of the drain voltage and involves lower energies dissipated in the DUT during SC before the failure. In this case, the damaged area is very small and is located below the source field plate at gate edge on the drain side. 2D finite element simulations show that in this region the dissipated power density becomes very high and can cause the local temperature to exceed the temperature limit of GaN/AlGaN structure.
关键词： GaN power HEMT,Short circuit,Failure analysis
更新于2025-09-23 15:21:01
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[IEEE 2019 International Conference on Electrical, Electronics and Computer Engineering (UPCON) - ALIGARH, India (2019.11.8-2019.11.10)] 2019 International Conference on Electrical, Electronics and Computer Engineering (UPCON) - A Study on the Influence of Open Circuit Voltage (Voc) and Short Circuit Current (Isc) on Maximum Power Generated in a Photovoltaic Module/Array
摘要： A technique is described, to efficiently evaluate the reliability of an RF semiconductor device when several different mechanisms contribute simultaneously to its wearout. This is of interest for present-day GaN HEMT devices because symptoms of several simultaneous degradation mechanisms have been reported widely. The technique involves first finding DC parameters that are “signatures” of each mechanism. Then, separate DC-stress lifetests are performed to find the degradation rates for the signature parameters, at several temperatures, and the corresponding Arrhenius curves. Next, an RF-stress lifetest (with only one stress condition) is performed, while monitoring all of the signature parameters and the RF performance. This is utilized to determine the “scaling factors” between the rates of change in the DC lifetests and the rates of change in the RF application. Applying these scaling factors to the original Arrhenius curves gives an “overall” Arrhenius plot for the RF application with several different lines, for the different degradation mechanisms. The technique can be extended to further degradation mechanisms, by conducting further DC and RF lifetests while monitoring appropriate signature parameters.
关键词： semiconductor device reliability,lifetesting,gallium nitride,HEMTs,Failure analysis
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE International Ultrasonics Symposium (IUS) - Glasgow, United Kingdom (2019.10.6-2019.10.9)] 2019 IEEE International Ultrasonics Symposium (IUS) - Tiled Large Element 1.75D Aperture with Dual Array Modules by Adjacent Integration of PIN-PMN-PT Transducers and Custom High Voltage Switching ASICs
摘要： A technique is described, to efficiently evaluate the reliability of an RF semiconductor device when several different mechanisms contribute simultaneously to its wearout. This is of interest for present-day GaN HEMT devices because symptoms of several simultaneous degradation mechanisms have been reported widely. The technique involves first finding DC parameters that are “signatures” of each mechanism. Then, separate DC-stress lifetests are performed to find the degradation rates for the signature parameters, at several temperatures, and the corresponding Arrhenius curves. Next, an RF-stress lifetest (with only one stress condition) is performed, while monitoring all of the signature parameters and the RF performance. This is utilized to determine the “scaling factors” between the rates of change in the DC lifetests and the rates of change in the RF application. Applying these scaling factors to the original Arrhenius curves gives an “overall” Arrhenius plot for the RF application with several different lines, for the different degradation mechanisms. The technique can be extended to further degradation mechanisms, by conducting further DC and RF lifetests while monitoring appropriate signature parameters.
关键词： lifetesting,semiconductor device reliability,gallium nitride,Failure analysis,HEMTs
更新于2025-09-23 15:19:57
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Photovoltaic Module Reliability || Failure Analysis Tools
摘要： Regardless of whether a module has degraded from field exposure or accelerated stress testing, it is important to understand what has actually changed within the module that led to lost peak power. If we want to use the results to improve the module construction so that future modules will not degrade, we must understand what particular changes have occurred. In this chapter, we will explore some of the methods used to better understand what has gone wrong within the module. Methods reviewed include, analysis of the I–V parameters, measurement of performance at different irradiances, visual inspection, Infrared (IR) Inspection, Electroluminescence (EL) and evaluation of adhesion. Each will be discussed in the subsections that follow.
关键词： Infrared Inspection,Electroluminescence,Adhesion,I–V Curve,PV Module,Failure Analysis,Visual Inspection
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE Conference on Power Electronics and Renewable Energy (CPERE) - Aswan City, Egypt (2019.10.23-2019.10.25)] 2019 IEEE Conference on Power Electronics and Renewable Energy (CPERE) - Thermal Performance Evaluation of 1500-VDC Photovoltaic Inverters Under Constant Power Generation Operation
摘要： A technique is described, to efficiently evaluate the reliability of an RF semiconductor device when several different mechanisms contribute simultaneously to its wearout. This is of interest for present-day GaN HEMT devices because symptoms of several simultaneous degradation mechanisms have been reported widely. The technique involves first finding DC parameters that are “signatures” of each mechanism. Then, separate DC-stress lifetests are performed to find the degradation rates for the signature parameters, at several temperatures, and the corresponding Arrhenius curves. Next, an RF-stress lifetest (with only one stress condition) is performed, while monitoring all of the signature parameters and the RF performance. This is utilized to determine the “scaling factors” between the rates of change in the DC lifetests and the rates of change in the RF application. Applying these scaling factors to the original Arrhenius curves gives an “overall” Arrhenius plot for the RF application with several different lines, for the different degradation mechanisms. The technique can be extended to further degradation mechanisms, by conducting further DC and RF lifetests while monitoring appropriate signature parameters.
关键词： semiconductor device reliability,lifetesting,gallium nitride,HEMTs,Failure analysis
更新于2025-09-19 17:13:59
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Temperature Accelerated Life Test and Failure Analysis on Upright Metamorphic Ga <sub/>0.37</sub> In <sub/>0.63</sub> P/Ga <sub/>0.83</sub> In <sub/>0.17</sub> As/Ge Triple Junction Solar Cells
摘要： A temperature accelerated life test on Upright Metamorphic Ga0.37In0.63P/Ga0.83In0.17As/Ge triple‐junction solar cells has been carried out. The acceleration has been accomplished by subjecting the solar cells to temperatures (125, 145 and 165°C) significantly higher than the nominal working temperature inside a concentrator (90°C), while the nominal photo‐current (500×) has been emulated by injecting current in darkness. The failure distributions have been fitted to an Arrhenius–Weibull model resulting in an activation energy of 1.39 eV. Accordingly, a 72 years warranty time for those solar cells for a place like Tucson (AZ, USA), was determined. After the ALT, an intense characterization campaign has been carried out in order to determine the failure origin. We have detected that temperature soak alone is enough to degrade the cell performance by increasing the leakage currents, the series resistance, and the recombination currents. When solar cells were also forward biased an increase of series resistance together with a reduction of short circuit current is detected. The failure analysis shows that: a) several metallization sub‐products concentrate in several regions of front metal grid where they poison the silver, resulting in a two times reduction of the metal sheet resistance; b) the metal/cap layer interface is greatly degraded and there is also a deterioration of the cap layer crystalline quality producing a huge increase of the specific front contact resistance, c) the decrease of short circuit current is mainly due to the GaInP top subcell degradation.
关键词： CPV,upright metamorphic solar cells,triple‐junction solar cells,solar cell reliability,failure analysis
更新于2025-09-16 10:30:52