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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Application to a Failure Analysis of Ultrasonic Beam Induced Resistance Change (SOBIRCH)
摘要： Failure analysis of the semiconductor device has the demand that the inspection should be performed without mold decapsulation. Conventional PEM(Photo Emission Microscope) and IR-OBIRCH(InfraRed Optical Beam Induced Resistance Change) cannot analyze in package state because the emission light and stimulation light for IR-OBIRCH cannot be transmitted through package mold. We developed new technique for package failure analysis based on ultrasonic stimulation. We named this technique as SOBIRCH(ultraSOnic Beam Induced Resistance Change). In this report, we describe the detection example of actual package IC and multilayer chip.
关键词： LIT,package failure analysis,ultrasonic,SOBIRCH,ultrasonic stimulation,IR-OBIRCH
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Short Circuit Ruggedness of New Generation 1.2 kV SiC MOSFETs
摘要： New generations of silicon carbide (SiC) based MOSFETs are commercially available from manufacturers featuring smaller chip size with higher power density demonstrating performance improvement compared to their previous generation counterparts. As the size of the chip is small, the volume available to dissipate energy during short-circuit (SC) like conditions is reduced, leading to increased self-heating of the device. Therefore, the short circuit withstand time (SCWT) is reduced. As a reliability aspect, ruggedness to extreme operating conditions like SC needs to be analyzed for these devices, to improve the design or to design better detection and protection circuits for these MOSFETs when used in specific SC vulnerable applications. In this work, the new third generation 1.2 kV SiC MOSFET from Wolfspeed in a TO-247-4 pin package having a smaller chip size is measured for SC ruggedness. The causes for device failure under different DC-link voltages, gate bias voltages, SC pulse durations and self-heating behavior are analyzed based on the destructive SC tests performed. The device is measured to have an SCWT of 2 μs at a DC-link voltage of 800 V compared to SCWT of 4.5 μs for the second generation 1.2 kV devices with larger chip size and TO-247-3 pin package. The presence of the Kelvin source contact demonstrates higher peak SC currents compared to the same devices without Kelvin source.
关键词： short-circuit ruggedness,SiC MOSFETs,Kelvin source contact,self-heating,failure analysis
更新于2025-09-04 15:30:14