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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - InGaAs FinFETs 3D Sequentially Integrated on FDSOI Si CMOS with Record Perfomance
摘要： In this paper, we demonstrate InGaAs FinFETs 3D sequentially (3DS) integrated on top of a fully-depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si CMOS compatible HKMG replacement gate flow and self-aligned raised source-drain regrowth. The low thermal budget of the top layer process caused no performance degradation of the lower level FETs. Record ION of 200 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V) for 3DS integrated III-V FETs on silicon is demonstrated, with a 50% reduction of RON compared to previous work. The achieved improved performance can be attributed to the introduction of doped extensions underneath the gate region as well as improvements in the direct wafer bonding technique.
关键词： 3DS,monolithic integration,wafer bonding,III-V,sequential integration,FinFETs
更新于2025-09-04 15:30:14
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Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode
摘要： We successfully fabricated core-multishell nanowires using low-pressure metal organic vapor phase epitaxy (MOVPE) in self-catalytic vapor-liquid-solid (VLS) mode. The central core consists of an InP nanowire, and the shells are composed of alternating InP and GaInAs layers. The dependence of the shape and optical characteristics of the nanowires on the number of InP/GaInAs periods were investigated. By increasing the shell-periods, we observed a star-shaped cross section. The optical characteristics of the nanowires were investigated by room-temperature photoluminescence (PL) spectroscopy. The number of PL peaks was found to increase with increasing number of periods, and the peaks became redshifted.
关键词： A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III-V materials,A1. Nanostructures,B2. Semiconducting indium phosphide
更新于2025-09-04 15:30:14
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Insight of surface treatments for CMOS compatibility of InAs nanowires
摘要： A CMOS compatible process is presented in order to grow self-catalyzed InAs nanowires on silicon by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas or plasma) during the substrate degassing combined with an in-situ arsenic annealing prior to growth. Morphological and structural characterizations of the InAs nanowires are presented and growth mechanisms are discussed in detail. The major influence of surface termination is exposed both experimentally and theoretically using statistics on ensemble of nanowires and density functional theory (DFT) calculations. The differences observed between Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) growth of InAs nanowires can be explained by these different surfaces terminations. The transition between a vapor solid (VS) and a vapor liquid solid (VLS) growth mechanism is presented. Optimized growth conditions lead to very high aspect ratio nanowires (up to 50 nm in diameter and 3 micron in length) without passing the 410 °C thermal limit, which makes the whole process CMOS compatible. Overall, our results suggest a new method for surface preparation and a possible tuning of the growth mechanism using different surface terminations.
关键词： nanowires,growth modeling,self-catalyzed growth,hydrogen preparation,density functional theory (DFT) modeling,III-V semiconductors on silicon,InAs
更新于2025-09-04 15:30:14
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Iron(III) β-diketonates: CVD precursors for iron oxide film formation
摘要： Within this study, the synthesis of three iron(III) β-diketonate complexes [Fe(β-diketonate)3] (β-diketonate = 2-acetylcyclopentanoate (3a), = 2-acetylcyclohexanoate (3b), = 4,4-dimethyl-1-phenyl pentanedionate (3c)) is described. The synthesis of 3a–c was performed by the reaction of the respective β-diketones with FeCl3 in the ratio of 3:1 in presence of NaOH. TG and DSC studies were carried out under an atmosphere of argon and oxygen, showing that 3b,c partly evaporate during the heating process. PXRD measurements of the as-obtained residues of 3a–c from the TG measurements confirmed the formation of crystalline α-Fe2O3 at 800 °C. Vapor pressure studies confirmed that complexes 3b and 3c show a better volatility (17.3 mbar (3b), 5.4 mbar (3c) at 120 °C) than the iron β-diketonate complexes [Fe(tfa)3] and [Fe(acac)3], respectively [62,63]. CVD studies carried out with 3a,b resulted in the formation of iron oxide thin films in presence of oxygen as reactive gas. However, complex 3c did not result in iron oxide film formation. All received layers were dense and coherent as proven by SEM studies. With metal-organic 3a and 3b, crystalline γ- and α-Fe2O3 layers were obtained at 450 °C, respectively. The XPS studies confirmed the formation of Fe2O3 layers with carbon impurities on the layer surfaces, however, in the layers no carbon could be detected.
关键词： TG,Vapor pressure,Iron,Solid-state structure,β-Diketonate,Iron(III) oxide,CVD
更新于2025-09-04 15:30:14
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Life sensors: current advances in oxygen sensing by lanthanide complexes
摘要： Aerobes, such as animals, plants, fungi, and several bacteria, depend upon oxygen to live. Consequently, oxygen sensing comprises an emerging technique in many research fields, ranging from medicine to marine science. In the last few years, lanthanide-based oxygen sensors have seen significant progress in the field of optical sensing technology owing to their long luminescence lifetimes and sharp luminescence bands. These sensors provide an alternative to expensive transition metal-based sensors, such as platinum and ruthenium complexes. This review covers the development and design of lanthanide-based oxygen sensors, along with their photophysical properties related to oxygen sensing. These lanthanide complexes achieve oxygen sensing through the excited state quenching of the intermediate triplet state of the antenna chromophore, which suggests that the sensitivity to pO2 arises from the rate of forward intramolecular energy transfer from the antenna triplet state to the accepting Ln3+ ion being competitive with bimolecular quenching by oxygen. As Tb(III) complexes are highly oxygen sensitive, they are favored to be good oxygen sensors, while the sensitivity of Eu(III), Dy(III), Nd(III), and Gd(III) complexes is low.
关键词： oxygen sensing,lanthanide complexes,Tb(III) complexes,optical sensing technology,photophysical properties
更新于2025-09-04 15:30:14
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Electrogenerated Chemiluminescent Chemodosimeter Based on a Cyclometalated Iridium(III) Complex for Rapid and Sensitive Detection of Thiophenol
摘要： Thiophenol is the simplest aromatic thiol that is utilized for various applications in industry and agriculture. However, it should be used with care because thiophenol is readily absorbed into the human body by inhalation and ingestion, which leads to serious internal injuries. Thus, there is an urgent need for real-time and accurate monitoring of thiophenol. Despite remarkable advantages of electrogenerated chemiluminescence (ECL) analysis, ECL thiophenol probes have never been reported. Herein, a new strategy for the rapid detection of thiophenol using an ECL turn-on chemodosimeter based on a cyclometalated Ir(III) complex is described. This analytical system showed superior sensitivity (limit of detection (LOD) value, 3.8 nM) in comparison to the conventional fluorescence method. In addition, our system exhibited remarkable selectivity and reaction rate towards thiophenol over other analytes. Moreover, it was successfully applied to quantify thiophenol in real water samples, providing a new proof-of-concept for field-monitoring based on ECL.
关键词： Cyclometalated Ir(III) complex,Electrogenerated chemiluminescence,Chemodosimeter,Sensitive detection,Thiophenol
更新于2025-09-04 15:30:14
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On the Fluorescent, Steric and Electronic Factors Affecting the Detection of Metallic Ions Using an Imidazolyl-Phenolic Derived Fluorescent Probe
摘要： The imidazolyl-phenolic probe used at the present study has its photophysic properties regulated by a tautomeric equilibrium. After the absorption of a photon, an excited state intramolecular proton transfer process generates a ketonic species, responsible for the 440 nm emission (in CH3CN/H2O, 95:5, v/v). Addition of Cu2+, Al3+, Cr3+ and Fe3+ suppresses emission through a combination of dynamic and static-like quenching, as indicated by Stern-Volmer plots, with a higher sensitivity for Cu2+ (KSV = 1.90 × 105 and 2.40 × 104 L mol–1, respectively, for Cu2+ and Fe3+). The trivalent ions led to the formation of a locked-enol tautomer that emits at shorter wavelengths; this coordinated compound is also quenched at metallic ions concentrations above 20 μmol L–1, due to a collisional process. When compared to another imidazolyl-phenolic probe, experimental and simulated data revealed that fluorescent, steric and electronic effects regulate their sensitivity towards the ions.
关键词： iron(III),copper(II),fluorescent sensor,ESIPT,tautomerization
更新于2025-09-04 15:30:14