- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Engineered Nano-Structured Virus/ZnO Hybrid Materials with Dedicated Functional Properties
摘要： Bio-inspired mineralization for the production of new functional materials offers mild reaction conditions suitable to integrate biological templates and build hierarchically organized hybrid nanostructures with defined properties. In this respect, tobacco mosaic virus (TMV) stands out due to its unique structural dimensions. Here, we present a novel mineralization pathway for synthesis of virus-based ZnO hybrids with multifunctional properties. Wild-type TMV (wt-TMV), two TMV mutants (E50Q and TMV-Cys) and amino-functionalized self-assembled monolayers (NH2-SAMs), as a reference, were used as templates. This mineralization approach allows control of the particle size of the inorganic phase. Further, the virus contributes additionally to the texturing of ZnO. Field effect transistors (FETs) built from the hybrid films showed reproducible results at optimized conditions at close to ambient conditions and without post-treatment. The significantly reduced threshold voltage of the E50Q/ZnO FET compared to NH2-SAMs/ZnO FET points to the impact of the organic template on FET performance. Nacre-like virus-based ZnO multilayers and corresponding monolithic references were prepared. The mechanical properties by means of Young’s modulus, hardness and fracture toughness were determined and an increase of the mechanical performance by genetic modification was observed.
关键词： field effect transistors,Bio-inspired mineralization,ZnO hybrids,mechanical properties,tobacco mosaic virus
更新于2025-09-11 14:15:04
-
Stability of diamond/Si bonding interface during device fabrication process
摘要： Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5 nm thick SixCx-1 layer was formed at the interface with annealing at 1000 °C. The layer was formed by the inter-diffusion of carbon and Si atoms near the bonding interface, which plays a role of residual stress relaxation between diamond and Si. These results suggest that diamond/Si heterostructures are applicable for combining diamond devices with Si LSI.
关键词： surface activated bonding,diamond/Si bonding,heterostructures,thermal stability,field-effect transistors
更新于2025-09-10 09:29:36
-
Polyelectrolyte Dielectrics for Flexible Low-Voltage Organic Thin-Film Transistors in Highly Sensitive Pressure Sensing
摘要： Organic thin-film transistors (OTFTs) can provide an effective platform to develop flexible pressure sensors in wearable electronics due to their good signal amplification function. However, it is particularly difficult to realize OTFT-based pressure sensors with both low-voltage operation and high sensitivity. Here, controllable polyelectrolyte composites based on poly(ethylene glycol) (PEG) and polyacrylic acid (PAA) are developed as a type of high-capacitance dielectrics for flexible OTFTs and ultrasensitive pressure sensors with sub-1 V operation. Flexible OTFTs using the PAA:PEG dielectrics show good universality and greatly enhanced electrical performance under a much smaller operating voltage of ?0.7 V than those with a pristine PAA dielectric. The low-voltage OTFTs also exhibit excellent flexibility and bending stability under various bending radii and long cycles. Flexible OTFT-based pressure sensors with low-voltage operation and superhigh sensitivity are demonstrated by using a suspended semiconductor/dielectric/gate structure in combination with the PAA:PEG dielectric. The sensors deliver a record high sensitivity of 452.7 kPa?1 under a low-voltage of ?0.7 V, and excellent operating stability over 5000 cycles. The OTFT sensors can be built into a wearable sensor array for spatial pressure mapping, which shows a bright potential in flexible electronics such as wearable devices and smart skins.
关键词： composite materials,organic field-effect transistors,flexible electronics,pressure sensors,dielectrics
更新于2025-09-10 09:29:36
-
Intrinsic Carrier Transport of Phase-Pure Homologous 2D Organolead Halide Hybrid Perovskite Single Crystals
摘要： This work reveals the intrinsic carrier transport behavior of 2D organolead halide perovskites based on phase-pure homologous (n = 1, 2, and 3) Ruddelsden–Popper perovskite (RPP) (BA)2(MA)n?1PbnI3n+1 single crystals. The 2D perovskite field effect transistors with high-quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single-crystal flakes with various n values under different temperatures. Unipolar n-type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 × 10?3, 8.3 × 10?2, and 1.25 cm2 V?1 s?1 at 77 K, respectively. Furthermore, by combining temperature-dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic–inorganic hybrid perovskites based on phase-pure homologous single crystals.
关键词： solution growth,field-effect transistors,photoluminescence,intrinsic charge transport,2D RPP single crystals
更新于2025-09-10 09:29:36
-
Suppressing Ambipolar Characteristics of WSe <sub/>2</sub> Field Effect Transistors Using Graphene Oxide
摘要： Monolayer (1L) tungsten diselenide (WSe2) is of interest for next generation ultrathin flexible electronic devices. However, typical WSe2 field effect transistors (FETs) show ambipolar characteristics that are not desirable for complementary field-effect-transistors and circuits. Here, significant suppression of the ambipolar characteristics of a 1L-WSe2 FET is demonstrated by using an electron withdrawing functional group of graphene oxide (GO). The pristine 1L-WSe2 FET shows n-type dominant ambipolar characteristics, whereas the GO coated 1L-WSe2 FET shows unipolar p-type behavior with a huge decrease (1/106) of current level of the n-channel. Also, the current level of the p-channel increases up to ten times that of the pristine 1L-WSe2 FET. These results are applicable for the realization of flexible nanoscale digital logic devices by using transition metal dichalcogenides.
关键词： field-effect-transistors,ambipolar,monolayer WSe2,unipolar,electron-withdrawing group
更新于2025-09-10 09:29:36
-
Impact of Post-Lithography Polymer Residue on the Electrical Characteristics of MoS <sub/>2</sub> and WSe <sub/>2</sub> Field Effect Transistors
摘要： The residue of common photo- and electron-beam resists, such as poly(methyl methacrylate) (PMMA), is often present on the surface of 2D crystals after device fabrication. The residue degrades device properties by decreasing carrier mobility and creating unwanted doping. Here, MoS2 and WSe2 field effect transistors (FETs) with residue are cleaned by contact mode atomic force microscopy (AFM) and the impact of the residue on: 1) the intrinsic electrical properties, and 2) the effectiveness of electric double layer (EDL) gating are measured. After cleaning, AFM measurements confirm that the surface roughness decreases to its intrinsic state (i.e., ≈0.23 nm for exfoliated MoS2 and WSe2) and Raman spectroscopy shows that the characteristic peak intensities (E2g and A1g) increase. PMMA residue causes p-type doping corresponding to a charge density of ≈7 × 1011 cm?2 on back-gated MoS2 and WSe2 FETs. For FETs gated with polyethylene oxide (PEO)76:CsClO4, removing the residue increases the charge density by 4.5 × 1012 cm?2, and the maximum drain current by 247% (statistically significant, p < 0.05). Removing the residue likely allows the ions to be positioned closer to the channel surface, which is essential for achieving the best possible electrostatic gate control in ion-gated devices.
关键词： MoS2,ionic gating,WSe2,field effect transistor,polymer residue
更新于2025-09-10 09:29:36
-
Probing the Electronic Properties of Monolayer MoS <sub/>2</sub> via Interaction with Molecular Hydrogen
摘要： This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H2) and monolayer MoS2 field effect transistors (MoS2 FET), aiming for sensing application. The MoS2 FET exhibits a response to H2 that covers a broad range of concentration (0.1–90%) at a relatively low operating temperature range (300–473 K). Most important, H2 sensors based on MoS2 FETs show desirable properties such as full reversibility and absence of catalytic metal dopants (Pt or Pd). The experimental results indicate that the conductivity of MoS2 monotonically increases as a function of the H2 concentration due to a reversible charge transferring process. It is proposed that such process involves dissociative H2 adsorption driven by interaction with sulfur vacancies in the MoS2 surface (VS). This description is in agreement with related density functional theory studies about H2 adsorption on MoS2. Finally, measurements on partially defect-passivated MoS2 FETs using atomic layer deposited aluminum oxide consist of an experimental indication that the VS plays an important role in the H2 interaction with the MoS2. These findings provide insights for future applications in catalytic process between monolayer MoS2 and H2 and also introduce MoS2 FETs as promising H2 sensors.
关键词： hydrogen gas sensor,gas interaction,hydrogen detection,monolayer MoS2,field effect transistors
更新于2025-09-10 09:29:36
-
Field Effect in PbSnTe:In Films with Low Conductivity in the Mode of Injection from Contacts and Space-Charge Limitation of the Current
摘要： At T = 4.2 K, a strong change (up to 4 times) in the space-charge-limited current (SCLC) is observed for the first time at samples based on semi-insulating PbSnTe:In films grown by molecular-beam epitaxy on BaF2(111) substrates. The obtained results agree with experiments on the effect of treatment of the surface of PbSnTe:In films on the space-charge-limited current with a variation in the current to 103 times or more. At a qualitative level, the model is considered which assumes the substantial contribution of localized surface states to space charge formed in the mode of space-charge-limited current due to the injection of charge carriers from contacts.
关键词： field effect,surface states,molecular-beam epitaxy,space-charge-limited current,PbSnTe:In films
更新于2025-09-10 09:29:36
-
Detection of Alpha-Fetoprotein in Hepatocellular Carcinoma Patient Plasma with Graphene Field-Effect Transistor
摘要： The detection of alpha-fetoprotein (AFP) in plasma is important in the diagnosis of hepatocellular carcinoma (HCC) in humans. We developed a biosensor to detect AFP in HCC patient plasma and in a phosphate buffer saline (PBS) solution using a graphene field-effect transistor (G-FET). The G-FET was functionalized with 1-pyrenebutyric acid N-hydroxysuccinimide ester (PBASE) for immobilization of an anti-AFP antibody. AFP was detected by assessing the shift in the voltage of the Dirac point (?VDirac) after binding of AFP to the anti-AFP-immobilized G-FET channel surface. This anti-AFP-immobilized G-FET biosensor was able to detect AFP at a concentration of 0.1 ng mL?1 in PBS, and the detection sensitivity was 16.91 mV. In HCC patient plasma, the biosensor was able to detect AFP at a concentration of 12.9 ng mL?1, with a detection sensitivity of 5.68 mV. The sensitivity (?VDirac) depended on the concentration of AFP in either PBS or HCC patient plasma. These data suggest that G-FET biosensors could have practical applications in diagnostics.
关键词： alpha-fetoprotein,biosensor,graphene,hepatocellular carcinoma,field-effect transistor
更新于2025-09-10 09:29:36
-
Ge Complementary Tunneling Field-Effect Transistors Featuring Dopant Segregated NiGe Source/Drain
摘要： Ge complementary tunneling field-effect transistors (TFETs) are fabricated with the NiGe metal source/drain (S/D) structure. The dopant segregation method is employed to form the NiGe/Ge tunneling junctions of sufficiently high Schottky barrier heights. As a result, the Ge p- and n-TFETs exhibit decent electrical properties of large ON-state current and steep sub-threshold slope (?? factor). Especially, ??d of 0.2 ??A/??m is revealed at ??g ? ??th = ??d = ±0.5 V for Ge pTFETs, with the ?? factor of 28 mV/dec at 7 K.
关键词： ON-state current,NiGe metal source/drain,Ge complementary tunneling field-effect transistors,sub-threshold slope,Schottky barrier heights,dopant segregation
更新于2025-09-10 09:29:36