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Trapped charge modulation at the MoS2/SiO2 interface by lateral electric field in MoS2 field-effect transistors
摘要： Controlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for the stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate the charge trapping process with a narrow dielectric layer with a high gate electric field. Here, we observed that charge trapping can also be affected by the lateral drain-source voltage (VDS) in the FET structure, as well as by the gate-source bias. Through multiple VDS sweeps with increasing measurement VDS range, we demonstrated that the charge trapping process could be modulated by the range of the applied lateral electric field. Moreover, we inserted hexagonal boron nitride (h-BN) layer between the MoS2 and SiO2 layer to explore the charge trapping behavior when a better interface is formed. This study provides a deeper understanding of controlling the electrical characteristics with interface-trapped carriers and lateral electrical fields in 2D materials-based transistors.
关键词： charge trapping,high electric fields,MoS2,field-effect transistors
更新于2025-09-23 15:23:52
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Evaluation of Low-Temperature Saturation Velocity in β -(Al?Ga???)?O?/Ga?O? Modulation-Doped Field-Effect Transistors
摘要： We report on the high-field transport characteristics and saturation velocity in a modulation-doped β-(AlxGa1?x)2O3/Ga2O3 heterostructure. The formation of a 2-D electron gas (2DEG) in the modulation-doped structure was confirmed from the Hall measurements, and the 2DEG channel mobility increased from 143 cm2/V·s at room temperature to 1520 cm2/V·s at 50 K. The high electron mobility at 50 K made it feasible to achieve velocity saturation inside the channel. The saturation velocity was estimated based on both pulsed current–voltage measurements and small-signal radio frequency (RF) measurements. The measured velocity–field profile suggested a saturation velocity above 1.1 × 107 cm/s at 50 K. The small-signal RF characteristics were measured for the fabricated modulation-doped field-effect transistors with a Pt-based Schottky contact. The current gain cutoff frequency (ft) and maximum oscillation frequency (fmax) showed significant increases from 4.0/11.8 GHz at room temperature to 17.4/40.8 GHz at 50 K for the device with gate length of LG = 0.61 μm. The analysis of the low temperature ft based on device simulations indicated a peak velocity of 1.2 × 107 cm/s. The three-terminal off-state breakdown measurement further suggested an average breakdown field of 3.22 MV/cm. The high saturation velocity and high breakdown field in β-Ga2O3 make it a promising candidate for high-power and high-frequency device applications.
关键词： mobility,β-Ga2O3,modulation-doped field-effect transistor (MODFET),2-D electron gas (2DEG),saturation velocity,high breakdown field
更新于2025-09-23 15:22:29
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Triple Gate Polycrystalline-Silicon-Based Ion-Sensitive Field-Effect Transistor for High-performance Aqueous Chemical Application
摘要： In this study, we developed a polycrystalline-silicon (poly-Si) thin-film transistor (TFT)-based, high-performance ion-sensitive field-effect transistor (ISFET) pH sensor that far surpasses the sensitivity of dual-gate pH sensors. A Triple gate structure on the same plane as the channel of the ISFET has been proposed to enhance the pH sensitivity. In a poly-Si TFT-based ISFET, a Triple gate is more advantageous than a bottom-gate for increasing capacitive coupling with the top-gate. As a result, the pH sensitivity by Triple gate (TG) mode detection using the Triple gate is much greater than single-gate (SG) mode detection using the top-gate, or dual-gate (DG) mode detection using the bottom-gate. The sensitivity of the TG mode greatly increased compared with the sensitivity of the conventional SG mode or DG mode. The measured pH sensitivity was 57.75 ± 0.77 mV/pH in the SG mode, 467.08 ± 9.92 mV/pH in the DG mode. In particular, the TG mode gives a maximum sensitivity of 1283.56 ± 45.54 mV/pH for a sensing membranes having a theoretical Nernstian pH response (59.15 mV/pH at 25 °C). Furthermore, we measured the hysteresis and drift characteristics, and found that the TG mode has improved non-ideal behavior compared to the SG and DG modes. Therefore, the poly-Si TFT-based TG ISFET pH sensor has the potential to become a promising biosensor application platform, with excellent sensitivity and stability.
关键词： ion-sensitive field effect transistor,Triple gate,capacitive coupling effect
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Intelligent and Innovative Computing Applications (ICONIC) - Mon Tresor, Plaine Magnien, Mauritius (2018.12.6-2018.12.7)] 2018 International Conference on Intelligent and Innovative Computing Applications (ICONIC) - OTA-C Filters for Biomedical Signal Processing Applications using Hybrid CMOS-CNFET Technology
摘要： Analog filters for biomedical signal processing applications deals with very slow or low frequency electrical activities of the physiological signals. This paper proposes first order, second order, fifth order elliptic low pass, second order notch and high pass OTA-C filters using hybrid CMOS-CNFET technology. Carbon Nanotube Field Effect Transistors (CNFETs) and CMOS devises can be heterogeneously integrated on a single 3-D chip to realize important signal processing building blocks such as OTA-C filters. Proposed circuits use Operational Transconductance Amplifier (OTA) as a building block for OTA-C filters. Realized filter circuits satisfy ultra-low power consumption requirement of wearable and implantable biomedical devices. The transistors used in the circuit operate in weak inversion to achieve ultra-low power consumption.
关键词： Noise Filtering,OTA-C Filters,Biomedical Signal Processing,Carbon Nanotube Field Effect Transistors
更新于2025-09-23 15:22:29
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MoS2/silicon-on-insulator Heterojunction Field-Effect-Transistor for High-performance Photodetection
摘要： In this letter, we demonstrate a novel junction field effect transistor (JFET) by transferring MoS2 onto silicon-on-insulator (SOI) substrate to control the thin Si channel. By combining high light absorption coefficient in MoS2 with high internal gain in thin Si channel, the device can be used for photodetection and achieve high responsivity up to ~1.78×104 A/W, high detectivity over 3×1013 Jones, and short response time down to 1.44 ms. Furthermore, unlike conventional SOI photodetector which is only sensitive to UV light, the response spectrum of our proposed device peaks in visible/near-infrared region, which is interesting for imaging and optical communication applications.
关键词： SOI,High photoresponsivity,Van der Waals heterojunction,MoS2,Junction field effect transistor
更新于2025-09-23 15:22:29
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Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
摘要： In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of (cid:1)0.97 (t0.6) V and (cid:1)1.22 (t0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
关键词： Threshold voltage,Hydrogen sense,Doping-channel field-effect transistor,Enhancement/depletion-mode,AlGaInP/InGaAs,Direct-coupled FET logic
更新于2025-09-23 15:22:29
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Sharp phase-separated interface of 6,13-bis(triisopropylsilylethynyl) pentacene/polystyrene blend films prepared by electrostatic spray deposition
摘要： In this study, organic field-effect transistors (OFETs) based on blend films comprising 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) and polystyrene (PS) were fabricated. The blend films were prepared by electrostatic spray deposition (ESD). A vertically phase-separated structure (TIPS pentacene (top)/PS (bottom)) can be spontaneously formed without additional treatments such as solvent-vapor annealing, which is significantly different from the blend with poly(methyl methacrylate) (PMMA). Due to the sharp phase-separated interface, OFETs based on the TIPS pentacene/PS blend films exhibited superior characteristics and operational stability.
关键词： Organic field-effect transistor,Small molecule/polymer blend,Electrostatic spray deposition,Vertical phase separation
更新于2025-09-23 15:22:29
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Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors
摘要： We present the electrical detection of singlet fission in tetracene by using a field-effect transistor (FET). Singlet fission is a photo-induced spin-dependent process, yielding two triplet excitons from the absorption of a single photon. In this study, we engineered a more deterministic platform composed of an organic single crystal FET rather than amorphous or polycrystalline FETs to elucidate spin-dependent processes under magnetic fields. Despite the unipolar operation and relatively high mobility of single crystal tetracene FETs, we were able to manipulate spin dependent processes to detect magnetoconductance (MC) at room temperature by illuminating the FETs and tuning the bias voltage to adjust majority charge carrier density and trap occupancy. In considering the crystalline direction and magnetic field interactions in tetracene, we show the MC response observed in tetracene FETs to be the result of the singlet fission process.
关键词： organic field effect transistors,singlet fission,magnetoconductance,single crystalline organic semiconductors
更新于2025-09-23 15:22:29
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Tuning Contact Resistance in Top-Contact <i>p</i> -Type and <i>n</i> -Type Organic Field Effect Transistors by Self-Generated Interlayers
摘要： Contact resistance significantly limits the performance of organic field-effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work-function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom-contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top-contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p- and n-type devices that is also suitable for top-contact OFETs. In this approach, judiciously selected interlayer molecules are co-deposited as additives in the semiconducting polymer active layer. During top contact deposition, the additive molecules migrate from within the bulk film to the organic/metal interface due to additive-metal interactions. Migration continues until a thin continuous interlayer is completed. Formation of the interlayer is confirmed by X-ray photoelectron spectroscopy (XPS) and cross-section scanning transmission electron microscopy (STEM), and its effect on contact resistance by device measurements and transfer line method (TLM) analysis. It is shown that self-generated interlayers that reduce contact resistance in p-type devices, increase that of n-type devices, and vice versa, confirming the role of additives as interlayer materials that modulate the effective work-function of the organic/metal interface.
关键词： organic electronics,TLM,self-generated interlayers,organic field-effect transistors
更新于2025-09-23 15:22:29
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
摘要： We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.
关键词： B3 High electron mobility transistors,B3 Field effect transistors,A3 Organometallic vapor phase epitaxy,A1 Etching,B2 Semiconducting III-V materials
更新于2025-09-23 15:22:29