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Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide
摘要： In this study, we present the feasibility to fabricate back-gated graphene field-effect transistors (GFETs) on 10 nm thermal SiO2 substrate. Here, we compare the mobility of graphene devices at different locations of the transferred CVD graphene. We observed that there is a n-type doping of the graphene devices with Dirac points within ± 0.5 V from an ideal value of 0 V. The downscaling of the back-gate dielectric thickness reduces the operating voltage range, commonly required for low power electronics, and the devices are stable during operation in air under ambient conditions. The extracted contact resistance is comparable to the earlier reports found in literature and this provides a feasibility to fabricate low power futuristic graphene based nanoelectronics.
关键词： CVD graphene,n-type doping,thermal SiO2,mobility,Dirac points,low power electronics,field-effect transistors,graphene,contact resistance
更新于2025-09-23 15:21:01
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<i>(Invited) The Scaling-Down and Performance Optimization of InAs Nanowire Field Effect Transistors</i>
摘要： Due to their fascinating properties, InAs nanowires have drawn great attention for the channel material in future transistors. Scaling-down has been an effective way to improve the performance of transistors continuously for decades. Here, we review our recent progresses on InAs nanowire field effect transistors (FETs) when they are scaled down. Our group investigates the electrical characteristics of InAs nanowire thinner than 10 nm. Both the size-effect and the contact properties of ultrathin nanowires are explored. Moreover, the effects of InAs crystal phase and orientation are studied for further optimizing the device performance. In addition, FETs with partial gate are studied to suppress the BTBT-induced off-current. Furthermore, to improve the electrostatics control of the gate, our group develops a method to fabricate vertical GAA FETs with all-metal electrodes based on self-catalyzed grown InAs nanowire arrays.
关键词： orientation,crystal phase,performance optimization,field effect transistors,partial gate,vertical GAA FETs,InAs nanowires,scaling-down
更新于2025-09-23 15:21:01
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Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors
摘要： In this article, the hydrogen sensing device and logic characteristics of the Al0.25Ga0.25In0.5P/In0.1Ga0.9As complementary co-integrated pseudomorphic doping-channel ?eld-effect transistors are demonstrated. Due to the existence of a relatively large conduction (valence) band discontinuity at Al0.25Ga0.25In0.5P/In0.1Ga0.9As heterojunction and the employment of a small energy-gap In0.1Ga0.9As channel layer, it could provide a high gate barrier height to avoid electrons (holes) injection form channel into gate region in the studied n-channel (p-channel) device. With respect to the n-channel (p-channel) transistor under hydrogen ambient, hydrogen molecules are adsorbed and dissociated on the Pd catalytic metal surface, followed by rapid diffusion of hydrogen atoms into the MS interface where the dipoles are formed to lower (elevate) the gate barrier height and enhance (decrease) the drain current. In the n-channel (p-channel) device, the threshold voltages at drain current of 0.1 mA/mm are of 0.67 (0.05) and 0.38 (?0.26) V in air and at hydrogen concentration of 9800 ppm, respectively. As hydrogen is detected, the characteristics of inverters shift left obviously, and the VOH and VIH values are decreased.
关键词： field-effect transistors,hydrogen sensing,AlGaInP/InGaAs,logic characteristics
更新于2025-09-23 15:21:01
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Few-layer PdSe2-based field-effect transistor for photodetector applications
摘要： We demonstrate a multilayer palladium diselenide (PdSe2) high-performance photodetector. The photodetector exhibits the photodetectivity of 0.15 ? 1010 Jones under laser illumination (λ ? 655 nm and power of 0.057 mWmm(cid:0) 2). The negative threshold voltage shift in transfer characteristics upon laser illumination is mainly attributed to the photogating effect. Systematic analysis of experimental data indicates that the photogating effect and space charge limited conduction are simultaneously involved in the conduction mechanism. We observe that the photogenerated current increases logarithmically as the light intensity increases, and it persists (~200 s) even after stopping the illumination. The slow decrease in current was attributed to the trapping of photogenerated charge carriers at the PdSe2/SiO2 interface and the defects in the structure of PdSe2. We also observe a reproducible and stable time-resolved photoresponse with respect to the incident laser power. We believe that this study can be an important source of information and can help researchers to continue to investigate methods that would allow them to maximise the potential of PdSe2 for photodetector applications.
关键词： Palladium diselenide,Photodetector,Field effect transistor,Two-dimensional materials,Photoresponse
更新于2025-09-23 15:21:01
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Performance Evaluation of Innovative Ion-Sensitive Field Effect Diode for pH Sensing
摘要： In this paper, we have successfully introduced and characterized an innovative ion sensitive device called “Ion sensitive field effect diode”, a completely new ion-sensitive sensor. In conventional ion-sensitive devices, electrolyte/insulator interface reactions produce a conductive channel between the drain and the source whereas in our proposed structure, a p-n junction forms and is responsible for the conductivity. Since it is for the first time that such device is proposed as an ion sensor, comprehensive characterizations have been performed based on our previously TCAD-based model which was developed to simulate electrolyte and electrolyte/insulator interface. Considering this reliable model, sensing parameters of pH sensors such as sensitivity and signal to noise ratio are investigated and evaluated. Meanwhile, an accurate model to approximate the noise behavior of the device is proposed. Moreover, the effect of Silicon active layer thickness and doping concentration on the sensitivity of the device have been studied. Results reveal that ion sensitive field effect diode can achieve sensitivity about 5 times higher than the Nernst limit and can be considered as a promising candidate toward accurate and more sensitive ion sensors and this new type of sensor deserves further attention and development.
关键词： pH sensor,Detection Limit,TCAD-based model,Ion Sensitive Field Effect Diode,Electrolyte/insulator interface
更新于2025-09-23 15:21:01
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Recent Advances in Isoindigo-Inspired Organic Semiconductors
摘要： Over the past decade, isoindigo has become a widely used electron-deficient subunit in donor-acceptor organic semiconductors, and these isoindigo-based materials have been widely used in both organic photovoltaic (OPV) devices and organic field effect transistors (OFETs). Shortly after the development of isoindigo-based semiconductors, researchers began to modify the isoindigo structure in order to change the optoelectronic properties of the resulting materials. This led to the development of many new isoindigo-inspired compounds; since 2012, the Kelly Research Group has synthesized a number of these isoindigo analogues and produced a variety of new donor-acceptor semiconductors. In this Personal Account, recent progress in the field is reviewed. We describe how the field has evolved from relatively simple donor-acceptor small molecules to structurally complex, highly planarized polymer systems. The relevance of these materials in OPV and OFET applications is highlighted, with particular emphasis on structure-property relationships.
关键词： isoindigo,organic field effect transistors,organic materials,organic photovoltaics,conjugated polymers
更新于2025-09-23 15:21:01
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Resonance Frequency Modulation for Rapid Point-of-care Ebola Glycoprotein Diagnosis with a Graphene-based Field-effect Bio-transistor
摘要： Recent outbreaks of the Ebola virus infection in several countries demand a rapid point-of-care (POC) detection strategy. This paper reports on an innovative pathway founded on electronic resonance frequency modulation to detect Ebola glycoprotein (GP), based on carrier injection-trapping-release-transfer mechanism and standard antibody-antigen interaction principle within a dielectric-gated reduced graphene oxide (rGO) field-effect transistor (GFET). The sensitivity of the current Ebola detection can be significantly enhanced by monitoring the device’s electronic resonance frequency, such as inflection frequency (fi), where phase angle reaches maximum (θmax). In addition to excellent selectivity, a sensitivity of ~36-160 % and ~17-40 % for 0.001-3.401 mg/L Ebola GP can be achieved at high and low inflection resonance frequencies, respectively, which are several orders of magnitude higher than the sensitivity from other electronic parameters (e.g., resistance-based sensitivity). Using equivalent circuit modelling on contributions of channel and contact, analytical equations for resonance shift have been generalized. When matching with the incoming ac measurement signal, electronic resonance from the phase angle spectrum is evolved from various relaxation processes (e.g., trap and release of injected charge at surface trap sites of channel-gate oxide and channel-source/drain interface) that are associated with a characteristic emission frequency. Using charge relaxation dynamics, a high-performance bio-FET sensing platform for healthcare and bio-electronic applications is realized through resonance shifting.
关键词： graphene-based field-effect transistor,Ebola glycoprotein,resonance frequency modulation,point-of-care detection,bio-FET sensing platform
更新于2025-09-23 15:21:01
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Chemical and Biomolecule Sensing with Organic Field-Effect Transistors
摘要： The strong and controllable chemical sensitivity of organic semiconductors (OSCs) and the amplification capability of transistors in circuits make use of OSC-based field-effect transistors compelling for chemical sensors. Analytes detected and assayed range from few-atom gas-phase molecules that may have adverse health and security implications to biomacromolecules (proteins, nucleic acids) that may be markers for physiological processes and medical conditions. This review highlights recent progress in organic field-effect transistor (OFET) chemical sensors, emphasizing advances from the past 5 years and including aspects of OSC morphology and the role of adjacent dielectrics. Design elements of the OSCs and various formats for the devices are illustrated and evaluated. Challenges associated with the present state of the art and future opportunities are also discussed.
关键词： organic field-effect transistors,organic semiconductors,dielectrics,biomacromolecules,chemical sensors
更新于2025-09-23 15:21:01
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Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors
摘要： Solution processible perovskite quantum dots are considered as promising optical materials for light emitting optoelectronics. The light-emitting field-effect transistors that can be operated under relatively lower potential with an efficient energy conversion efficiency have yet to be realized with the perovskite quantum dot. Here, we present the CsPbBr3 quantum dot-based light-emitting field-effect transistor (LEFET). Surprisingly, unipolar transport characteristics with strong electroluminescence was observed at the interface of the CsPbBr3 QD-LEFET along with the exceptionally wide recombination zone of 80 μm, an order of magnitude larger than that of organic/polymer light-emitting field-effect transistors. Based on the systematic analysis for the electroluminescence of the CsPbBr3 NC-LEFET, we revealed that the increased diffusion length determined by the majority carrier mobility and the lifetime well explains the remarkably wide recombination zone. Furthermore, it was found that the energy-level matching and transport geometry of the hetero-structure also determine the charge distribution and recombination, substantially affecting the performance of the CsPbBr3 QD LEFET.
关键词： Organic/inorganic hybrid field-effect-transistor,Light emitting field-effect-transistor,Wide recombination zone,Diffusion length,CsPbBr3 quantum dots
更新于2025-09-23 15:19:57
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Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors
摘要： Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness-dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin-film field effect transistors and phototransistors due to its high intrinsic mobility (>102 cm2 V?1 s?1) and the direct optical transitions in an energy range suitable for visible and near-infrared light detection. A key requirement for the exploitation of large-scale (opto)electronic applications relies on the development of low-cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high-throughput device fabrication methods. Here, a β polymorph of indium selenide (β-InSe) is exfoliated in isopropanol and spray-coated InSe-based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W?1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate-dependent conduction with an n-channel transistor behavior. Overall, this study establishes that liquid phase exfoliated β-InSe is a valid candidate for printed high-performance photodetectors, which is critical for the development of industrial-scale 2D material-based optoelectronic devices.
关键词： photodetectors,2D semiconductors,indium selenide,field effect transistors,liquid phase exfoliation,spray coating,solution processed
更新于2025-09-23 15:19:57