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Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field-Effect Transistors
摘要： Polymer ferroelectrics are playing an increasingly active role in flexible memory application and wearable electronics. The relaxor ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene (PVDF-TrFE), although vastly used in organic field-effect transistors (FETs), has issues with gate leakage current especially when the film thickness is below 500 nm. This work demonstrates a novel method of selective poling the dielectric layer. By using solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor, it is shown that textured poling of the PVDF-TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF-TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS-pentacene FETs show on/off ratios of 105 and hole mobilities of 1 cm2 Vs?1 under ambient conditions with operating voltages well below ?5 V. The electric field distribution in the dielectric layer is simulated by using finite difference time domain methods.
关键词： poling,organic semiconductor,ferroelectric dielectric,field-effect transistors,transport
更新于2025-09-19 17:15:36
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Scalable fabrication of a complementary logic inverter based on MoS <sub/>2</sub> fin-shaped field effect transistors
摘要： Integration of high performance n-type and p-type field-effect transistors with complementary device operation in the same kind of layered materials is highly desirable for pursuing low power and flexible next-generation electronics. In this work, we have shown a well-mannered growth of MoS2 on a fin-shaped oxide structure and integration of both n-type and p-type MoS2 by using a traditional implantation technique. With the advance of the fin-shaped structure, the maxima and the effective ON current density for the MoS2 fin-shaped field-effect transistors are respectively obtained to be about 50 μA μm?1 (normalized by the circumference of the fin) and around 500 μA μm?1 (only normalized by the fin size), while its ON/OFF ratio is more than 10? with low OFF current of a few pA. Based on our n-type and p-type MoS2 fin-shaped field-effect transistors, the complementary MoS2 inverter with a high DC voltage gain of more than 20 is acquired. Our results provide evidence for complementary 2D material operation in the same materials, a promising avenue for the development of high performance and high-density complementary 2D electronic devices.
关键词： ion implantation,2D materials,fin-shaped field-effect transistors,MoS2,complementary logic inverter
更新于2025-09-19 17:15:36
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Structural and Electronic Origin of Bis-Lactam Based High Performance Organic Thin Film Transistors
摘要： We describe herein the comprehensive theoretical and experimental studies on the transistor mobility of organic semiconductors by correlating two-dimensional (2D) intermolecular interaction with thin film morphology and the electronic coupling structure. We developed a novel bis-lactam based small molecule, 1,5-dioctyl-3,7-di(thiophen-2-yl)-1,5-naphthyridine-2,6-dione (C8-NTDT) with 2D-type C-H···O=C intermolecular interaction along the in-plane directions of crystal packing structure, which is characteristically different from the 1D-type intermolecular interaction shown in the typical bis-lactam molecule of C8-DPPT. Experimentally and theoretically, C8-NTDT exhibited more favorable thin film morphology and electronic coupling structure for charge transport due to their unique 2D intermolecular interactions compared with C8-DPPT. In fact, C8-NTDT exhibited hole mobility of up to 1.29 cm2 V-1 s-1 and on/off ratio of 107 in vacuum processed device. Moreover, the high solubility with 2D electronic coupling structure of C8-NTDT enables versatile solution processing for device fabrication without performance degradation compared to the vacuum processed device. As an example, we could demonstrate hole mobility of up to 1.10 cm2 V-1 s-1 for the spin-coated devices, which is one of the best performance among the solution processed organic field effect transistors based on bis-lactam containing small molecules.
关键词： Organic Field Effect Transistor,Bis-Lactam,NTD,DPP,2D
更新于2025-09-19 17:15:36
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Carbon Nanotube Complementary Gigahertz Integrated Circuits and Their Applications on Wireless Sensor Interface Systems
摘要： Along with ultralow-energy delay products and symmetric complementary polarities, carbon nanotube field-effect transistors (CNT FETs) are expected to be promising building blocks for energy-efficient computing technology. However, the work frequencies of the existing CNT-based complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) are far below the requirement (850 MHz) in state-of-art wireless communication applications. In this work, we fabricated deep submicron CMOS FETs with considerably improved performance of n-type CNT FETs and hence significantly promoted the work frequency of CNT CMOS ICs to 1.98 GHz. Based on these high-speed and sensitive voltage-controlled oscillators, we then presented a wireless sensor interface circuit with working frequency up to 1.5 GHz spectrum. As a preliminary demonstration, an energy-efficient wireless temperature sensing interface system was realized combining a 150 mAh flexible Li-ion battery and a flexible antenna (center frequency of 915 MHz). In general, the CMOS-logic high-speed CNT ICs showed outstanding energy efficiency and thus may potentially advance the application of CNT-based electronics.
关键词： complementary metal-oxide semiconductor,sensor interface,voltage-controlled oscillators,field-effect transistors,carbon nanotube film
更新于2025-09-19 17:15:36
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Gate-tunable near-field heat transfer
摘要： Active control over the flow of heat in the near-field holds promise for nanoscale thermal management, with applications in refrigeration, thermophotovoltaics, and thermal circuitry. Analogously to its electronic counterpart, the metal-oxide-semiconductor (MOS) capacitor, we propose a thermal switching mechanism based on accumulation and depletion of charge carriers in an ultra-thin plasmonic film, via application of external bias. In our proposed configuration, the plasmonic film is placed on top of a polaritonic dielectric material that provides a surface phonon polariton (SPhP) thermal channel, while also ensuring electrical insulation for application of large electric fields. The variation of carrier density in the plasmonic film enables the control of the surface plasmon polariton (SPP) thermal channel. We show that the interaction of the SPP with the SPhP significantly enhances the net heat transfer. We study SiC as the oxide and explore three classes of gate-tunable plasmonic materials: transparent conductive oxides, doped semiconductors, and graphene, and theoretically predict contrast ratios as high as 225%.
关键词： ITO,field effect,graphene,thermal radiation
更新于2025-09-19 17:15:36
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Transistor Characteristics of Single Crystalline C<sub>8</sub>-BTBT Grown in Coated Liquid Crystal Solution on Photo-Alignment Films
摘要： We examined single crystal growth of benzothienobenzothiophene-based organic semiconductors by solution coating method using liquid crystal and investigated its electrical characteristics. As the results, we revealed that the averaged mobility in the saturation region reached 2.08 cm2/Vs along crystalline b-axis, and 1.08 cm2/Vs along crystalline a-axis.
关键词： organic semiconductor,liquid crystal solvent,single crystal,solution coating,organic field effect transistor
更新于2025-09-19 17:15:36
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - 3D Printed Ion-Selective Field Effect Transistors
摘要： This report describes 3D printed ion-selective field effect transistors (IS-FET), which contains electro-chemical working electrodes for selective ion detection. For the comparison of behaviors, two different types of field effect transistors are fabricated by 3D printing and vacuum deposition. And both types of FETs are integrated with the 3D printed ion-selective electrodes. Then, the sensing performance of these two types of IS-FET has been investigated. The source-drain current for the whole 3D printed IS-FET is in the scale of 10-8 A, which can be compared with current scale of deposited IS-FET with 10-6 A.
关键词： ion-selective field effect transistors,3D printing,oxide FET
更新于2025-09-19 17:15:36
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NIR polymers and phototransistors
摘要： A novel bisthiophene-fused diketopyrrolopyrrole unit (4,11-bis(2-octyldodecyl)-7H,14H-thieno[30,20:7,8]indolizino[2,1-a]thieno[3,2-g]indolizine-7,14-dione, BTI) has been designed as an electron acceptor and used to copolymerize with thiophene and bithiophene as electron donors to construct two D–A conjugated polymers, P1 and P2 via Stille coupling, respectively. The two polymers showed excellent thermal stability, broad light absorption and a narrow energy band gap. P1 and P2 were used to fabricate organic field-effect transistors (OFETs) to evaluate their charge transport characteristics. P2 showed much better hole transport performance with a mobility of 0.1 cm2 V?1 s?1. Near-infrared (NIR) phototransistors were also fabricated by using the two polymers blended with PC71BM as the active layer. With illumination of 35 mW cm?2 at a wavelength of 850 nm, the photocurrent/dark-current ratio (P) and photoresponsivity (R) of the phototransistor based on P1/PC71BM were 3.6 × 104 and 270 A W?1, respectively. For P2/PC71BM, P was 2.5 × 104 and R reached 2420 A W?1.
关键词： phototransistors,photoresponsivity,organic field-effect transistors,diketopyrrolopyrrole,NIR polymers,charge transport
更新于2025-09-19 17:15:36
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Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor
摘要： We report the control of threshold voltage (Vth) for low voltage (5 V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of ?5 V and Vth shift by c.a. 1.0 V. And programmed Vth was almost unchanged for 104 s, where the relative change of Vth remains more than 99%.
关键词： organic field effect transistor,threshold voltage control,low-voltage
更新于2025-09-19 17:15:36
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Remote Phonon Scattering in Two-Dimensional InSe FETs with High-κ Gate Stack
摘要： This work focuses on the effect of remote phonon arising from the substrate and high-κ gate dielectric on electron mobility in two-dimensional (2D) InSe field-effect transistors (FETs). The electrostatic characteristic under quantum confinement is derived by self-consistently solving the Poisson and Schr?dinger equations using the effective mass approximation. Then mobility is calculated by the Kubo–Greenwood formula accounting for the remote phonon scattering (RPS) as well as the intrinsic phonon scatterings, including the acoustic phonon, homopolar phonon, optical phonon scatterings, and Fr?hlich interaction. Using the above method, the mobility degradation due to remote phonon is comprehensively explored in single- and dual-gate InSe FETs utilizing SiO2, Al2O3, and HfO2 as gate dielectric respectively. We unveil the origin of temperature, inversion density, and thickness dependence of carrier mobility. Simulations indicate that remote phonon and Fr?hlich interaction plays a comparatively major role in determining the electron transport in InSe. Mobility is more severely degraded by remote phonon of HfO2 dielectric than Al2O3 and SiO2 dielectric, which can be effectively insulated by introducing a SiO2 interfacial layer between the high-κ dielectric and InSe. Due to its smaller in-plane and quantization effective masses, mobility begins to increase at higher density as carriers become degenerate, and mobility degradation with a reduced layer number is much stronger in InSe compared with MoS2.
关键词： two-dimensional material,indium selenide,mobility,phonon scattering,high-κ dielectric,field effect transistor
更新于2025-09-19 17:15:36