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- Yeungnam University
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- MiaSolé Hi‐Tech
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- Nanjing University of Aeronautics & Astronautics
- Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
- Korea Institute of Energy Research (KIER)
- Normandie Univ, UNIROUEN, INSA Rouen
- Korea Institute of Science and Technology
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Performance and stability enhancement of Cu(InGa)Se2 solar cells on ultrathin glass by potassium incorporation
摘要： Flexible Cu(InGa)Se2 solar cells fabricated on metal foils and plastics have achieved high conversion efficiency so far. However, metal impurities and low temperature tolerance hinder them from further considerable development. Here, 150 lm-thick ultrathin glass with desirable advantages was applied as substrate for Cu(InGa)Se2 solar cell. Potassium element was doped by a simple method during the post-selenization process. The results showed that the KInSe2 phase existed in K-doped Cu(InGa)Se2 films. The K-doped CIGS films were more compact than the pristine one due to the fact that K incorporated in films could form quasi-liquid alkali-metal-Se compounds and improve the compactness of films. K-incorporated CIGS films exhibited enhanced p-type conductivity and different surface energy level. Consequently, K-doped Cu(InGa)Se2 solar cell achieved an optimal efficiency of 8.3%, which was relatively 43% higher than that of pristine solar cell. Investigation of performance and stability of solar cells manifested that the K incorporation retarded the performance degradation of device during cyclic bending.
关键词： Potassium incorporation,Ultrathin glass,Cu(InGa)Se2,Thin films,Solar energy materials
更新于2025-09-23 15:21:01
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Effect of Ga introduction during the second stage of a coevaporation process of Cu(In,Ga)Se2 layers at low temperature on polyimide substrates
摘要： A proper control of Ga concentration pro?le is mandatory to achieve high e?ciency Cu(In,Ga)Se2 (CIGS) solar cells. At low temperature, deep gradients, detrimental for carriers' di?usion, are obtained when CIGS is deposited with a standard three-stage process: an optimization of the process is needed. In this study, we show the impact of a modify three-stage process on the depth of the notch by introducing Ga ?ux during the second stage from 0 nm/min to 1.1 nm/min. A higher open circuit voltage compensated by a lower short current density is obtained due to higher band gap energy. The surface and the bulk of the CIGS layer was analyzed at the end of the second stage by coupling di?erent characterization techniques: glow discharge optical emission spectroscopy, Raman and X-ray photoelectrons spectroscopy. The presence of binary compounds as well as a Ga enrichment at the end of the second stage are observed when Ga is introduced during the second stage.
关键词： low temperature,X-ray photoelectron spectroscopy,solar cells,Cu(In,Ga)Se2,three-stage process,glow discharge optical emission spectroscopy,Raman spectroscopy,CIGS,Ga concentration pro?le
更新于2025-09-23 15:21:01
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Examination of relationship between Urbach energy and open-circuit voltage deficit of flexible Cu(In,Ga)Se <sub/>2</sub> solar cell for its improved photovoltaic performance
摘要： Flexible Cu(In,Ga)Se2 (CIGSe) solar cells on stainless steel (SUS) substrates are developed. The contribution concentrates on the investigation of the correlation between Urbach energy (EU) and open-circuit voltage deficit (VOC,def). The several CIGSe solar cells on soda-lime glass and SUS substrates with various VOC,def values are fabricated through the variations of [Ga]/([Ga]+[In]) ratio (GGI), substrate temperature (TSUB) and Fe concentration of their CIGSe absorbers. The EU is determined based on external quantum efficiency in the long-wavelength edge. It is determined that the EU is influenced by the GGI, TSUB and Fe concentration. The EU is well consistent with the carrier lifetimes and can be an indicator of the CIGSe quality. In addition, the relationship between EU and VOC,def is obviously observed, where the decrease in the EU by 1 meV reduces the VOC,def by 8.6 mV. Through the optimizations of GGI and TSUB as well as the minimization of Fe concentration, the EU is obviously reduced, which implies the improvement of the CIGSe quality. Ultimately, the high η of 17.9% for the flexible CIGSe solar cell on SUS substrate is attained.
关键词： Cu(In,Ga)Se2,stainless steel substrate,TRPL carrier lifetime,Urbach energy,open-circuit voltage deficit
更新于2025-09-23 15:19:57
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Energy band alignment in molybdenum oxide/ Cu(In,Ga)Se2 interface for high efficiency ultrathin Cu(In,Ga)Se2 solar cells from low-temperature growth
摘要： In this work, the molybdenum oxide (MoOx) was employed as a back contact layer to improve the device performance of ultrathin Cu(In,Ga)Se2 (CIGS) solar cells with CIGS absorber synthesized through the low-temperature three-stage co-evaporation process. This contribution focuses on the investigation of the inherent mechanisms and the improved device performance in detail. Our research shows that the energy band of the CIGS/Mo interface can be tuned and the Schottky barrier can be reduced. Compared with the reference sample without MoOx, the back barrier height of the new device with 10 nm MoOx enjoys a significant decrease from 43.83 meV to 15.98 meV because of the improvement of energy band structure. Meanwhile, the results of wxAMPS simulation corroborate that the energy band bends upward in the devices with appropriate thickness of MoOx films, which facilitates the carrier transportation and suppresses the recombination of charge carriers at the MoOx/Cu(In,Ga)Se2 interface. Moreover, the carriers can transport through the MoOx/CIGS interface by tunneling when the MoOx film is thin enough. Finally, by controlling the thicknesses of MoOx films, an efficiency of 10.38 % is achieved in 0.5 μm CIGS solar cells by optimizing the MoOx thickness under the low-temperature three-stage co-evaporation process.
关键词： ultrathin,Cu(In,Ga)Se2,MoOx,low-temperature,energy band
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Equivalent Circuit For AC Response of Cu(In,Ga)Se <sub/>2</sub> Thin Film Solar Cells
摘要： Ultrathin Cu(In,Ga)Se2 (CIGS) is desired to reduce production costs of CIGS solar cells. The present work aims to study the AC electrical response of standard-thick, ultrathin and passivated ultrathin devices. Admittance measurements allow to choose the AC equivalent circuit for each type of CIGS device. It is of utmost importance to understand the AC electrical behavior of each device, as the differences between reference thick, reference ultrathin and passivated ultrathin CIGS solar cells are yet to be fully understood. The analyses show a simpler AC equivalent circuit for the reference ultrathin device, which is explained by the lowered bulk recombination for thin film CIGS solar cells when compared with thick ones. The importance of shunts mitigation by the use of a passivation layer is also demonstrated, with a shunt resistance increase for the passivation device compared to both reference devices.
关键词： admittance,Cu(In,Ga)Se2,recombination,ultrathin solar cells
更新于2025-09-23 15:19:57
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Thin-film micro-concentrator solar cells
摘要： Concentrator PV (CPV) employs optical elements to concentrate sunlight onto small solar cells, offering the possibility of replacing expensive solar cells by more economic optical elements, and higher device power conversion efficiencies. While CPV has mainly been explored for highly-efficient single crystalline and multi-junction solar cells, the combination of thin-film solar cells with the concentration approach opens up new horizons in CPV. Typical fabrication of thin-film solar cells can be modified for efficient, high-throughput, and parallel production of organized arrays of micro solar cells. Their combination with micro lens arrays promises to deliver micro-concentrator solar modules with a similar form factor as present day flat panel PV. Such thin-film micro-concentrator PV modules would use significantly less semiconductor solar cell material (reducing the use of critical raw materials) and lead to a higher energy production (by means of concentrated sunlight), with the potential to lead to a lower levelized cost of electricity. This review article gives an overview of the present state-of-the-art in the fabrication of thin-film micro solar cells based on Cu(In,Ga)Se2 absorber materials and introduces optical concentration systems that can be combined to build the future thin-film micro-concentrator PV technology.
关键词： Cu(In,Ga)Se2,concentrator photovoltaics,thin film solar cells,photovoltaics,micro-concentrator
更新于2025-09-23 15:19:57
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Al-doped zinc stannate films for photovoltaic applications
摘要： Al-doped zinc stannate (Zn2SnO4 : Al or Zn-Sn-O : Al or AZTO) has attracted considerable attention as a next-generation transparent conducting oxide (TCO) owing to its properties. In this study, AZTO films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature. The as-deposited AZTO films were confirmed to be satisfactorily adherent with good uniformity. These films had an average transmittance of over 80%, energy band gap of >3.5 eV, and relatively low electrical resistivity of 1.29×10?1 Ω cm. The composition ratio of Zn/Sn at 140 W of SnO2 power was approximately 2, indicating the formation of AZTO film with stoichiometric composition of Zn2SnO4 : Al at this power. Further, the Cu(InGa)Se2 (CIGS) device fabricated with AZTO (140 W) as a TCO exhibited an efficiency of 0.73%, with a VOC of 0.51 V, JSC of 3.76 mA/cm2, and FF of 38.4%. Furthermore, the conversion efficiency of CIGS cell was enhanced to 2.82% by employing the AZTO film deposited at the elevated temperature of 350 oC.
关键词： Al-doped Zinc Stannate,Thin Films,Cu(InGa)Se2,Transparent Conducting Oxides
更新于2025-09-23 15:19:57
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System for manufacturing complete Cu(In,Ga)Se2 solar cells in situ under vacuum
摘要： We present the development of a small foot-print physical vapor deposition (PVD) system for in-situ deposition of all layers required in a complete Cu(In,Ga)Se2 (CIGS) solar cell. Seven sputtering magnetrons and one valved-cracker source have been custom designed and manufactured for this system, named SpuTtering for Advanced Research (STAR). The purpose of STAR is to develop a technique to fabricate a complete CIGS solar cell, including contacts, absorber, buffer, and window layers, under high vacuum with the aim to transfer this technology to a future industrial production line. The system’s capabilities and its relatively high throughput place it somewhere in between research and industrial development levels. It is possible to work on the deposition of the back contact, the CIGS absorber, and the window layer of three solar cells simultaneously. Calibration data, selection of parameters for the deposition of the individual layers, and initial results of a complete CIGS solar cell developed with STAR are reported.
关键词： Pulsed evaporation,Thin-film photovoltaics,Cu(In,Ga)Se2,Sputtering
更新于2025-09-23 15:19:57
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Pulsed laser annealing of spray casted Cu(In,Ga)Se2 nanocrystal thin films for solar cell application
摘要： We report ambient processing of 2.5 μm thick layers of Cu(In,Ga)Se2 (CIGS) nanocrystals thin films sprayed on CdS/i:ZnO/Al:ZnO/Soda lime glass substrates with pulsed laser annealing (PLA), using 1064 nm laser at 220 ns pulse width for solar cell fabrication. The choice of the nanosecond pulse width of the near-infrared laser source is critical for the effectiveness of the laser sintering of the CIGS layer irrespective of substrate thermal stability. Solid state sintering by PLA post treatment is evidenced via morphological and structural analysis. The analysis confirms the improvement in the quality of CIGS absorber with respect to its grain size from 5 nm to 20 nm after PLA, which is expected to reduce deep level defects. The short circuit current density of photovoltaic devices prepared using ambient processed laser annealed absorber layer increased significantly from 0.75 mA cm?2 to 8 mA cm?2, resulting in reasonable power conversion efficiency exceeding 1%. The promising results realized by PLA treatment, presented in this work, have great potential to be integrated into scalable roll-to-roll manufacturing of CIGS solar cells.
关键词： Non-vacuum,Cu(In,Ga)Se2,Solar cells,Annealing,Nanosecond,Laser
更新于2025-09-23 15:19:57
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Surface passivation of a Cu(In,Ga)Se2 photovoltaic absorber using a thin indium sulfide layer
摘要： The present study demonstrates the surface passivation of Cu(In,Ga)Se2 (CIGS) photovoltaic absorbers using a thin In2S3 layer and its effect on the performance of the CIGS device. Two types of CIGS samples with different surface roughness values prepared by conventional selenization of metal precursors (2-step) and three-stage co-evaporation (3-stage) were used to determine the influence of In2S3 surface passivation on CIGS surface roughness to minimize recombination at the interface of the CIGS and buffer layers. Three types of buffer layers, i.e., In2S3, CdS single layers, and an In2S3/CdS double layer, were prepared by chemical bath deposition on bare and Mo-coated substrates as well as glass/Mo/CIGS samples. The phase formation and properties of the as-prepared buffer layers were analyzed by XRD, Raman, and UV–Vis–NIR techniques. The power conversion efficiency of the CIGS solar cells was enhanced significantly for the 2-step-processed CIGS (from 6.97% to 9.89%) and slightly for the 3-stage-processed CIGS (from 10.1% to 11.0%) when passivated with In2S3. Further, both the In2S3 surface passivated 2-step- and 3-stage-processed CIGS devices exhibited high quantum efficiencies in the wavelength range of 400–550 nm. Therefore, surface passivation with In2S3 could improve the performance of CIGS devices.
关键词： Chalcopyrite,Surface passivation,Indium sulfide,Hybrid buffer,Cu(In,Ga)Se2,Double buffer
更新于2025-09-19 17:13:59