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Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates
摘要： We investigated the electrical and optical properties of a highly mismatched AlInSb/GaAs photodiode sensor working in the mid-infrared range at room temperature. A substantial increase in the device performance was achieved by controlling the strain energy density in the dislocation ?lter layers and barrier layers to reduce the density of threading and interfacial dislocations, respectively. The resulting photodiode showed a high resistance-area product of 0.24 Ω cm2 and a peak detectivity of 2.2 × 109 cm Hz1/2 W–1 at 3.3 μm.
关键词： AlInSb,GaAs substrates,photodiode,dislocation reduction,mid-infrared
更新于2025-09-16 10:30:52
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Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of <i>top-down</i> n?+?InAs/p?+?GaSb nanowire tunneling devices
摘要： We study in this work the growth and fabrication of top-down highly doped n + InAs(Si)/p + GaSb(Si) Esaki tunneling diodes on (001) GaAs substrates. A careful investigation on the highly mismatched GaSb/GaAs growth is first conducted by means of Reflection High-Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and X-Ray Diffraction (XRD) analyses. These results are expected to pave the way to methods for III-Sb buffer layer’s integration with low threading dislocation (TD) densities. A comparison between AFM, XRD, defect revealing by chemical etching and transmission electron microscopy (TEM) is then presented to calculate the precise TD density and its influence on the device structure. In the last part, we report on first operating sub-30 nm III-V vertical NW tunneling devices on (001) commercial GaAs substrates.
关键词： III-Sb growth,AFM,dislocations,TEM,nanowire tunneling devices,XRD,RHEED,GaAs substrates
更新于2025-09-10 09:29:36