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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Common Mode Noise Analysis for a High Step-Up Converter with GaN Devices
摘要： High Step-up converters have numerous applications in renewable energy systems and electric automotive industry. To improve the power density, an interleaved high step-up boost converter with coupled inductor was proposed. However, for practical applications is compulsory that this topology must comply with the CISPR standards. Therefore, to identify the noise sources in the analyzed converter, an equivalent noise modelling is conducted. These models revealed the dependency of inductor windings on different noise sources. For experimental analysis of the conducted emissions of this topology, GaN FETs based prototype is designed. Several tests were carried out to find the effect of various factors on noise emission. As results of tests, 1) Increasing the switching frequency generates increase in the noise spikes 2) Noise emissions from the converter do depend on its mode of operation 3) High peaks of noise are generated at low frequency range by reducing the voltage transition time across the switch.
关键词： Coupled-Inductor,High Step-Up,GaN FETs,CM Noise,DC-DC Converter,EMI Noise
更新于2025-09-23 15:22:29
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Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-Loads
摘要： Herein, GaN driver FETs with a high energy bandgap are employed in photosensitive inverters to eliminate light-shield layers (LSLs). This configuration exhibits full-swing characteristics of photosensitive inverters comprised of multi-layered MoS2 FETs loads in photosensitive pseudo-depletion mode. The GaN FETs provide both high current drivability and excellent photo-leakage immunity under visible light (Eg~3.1 eV). This allows the photosensitive inverters to be successfully operational without LSLs. The relative degradation (%) of voltage gain for photosensitive inverters with GaN drivers from dark to blue light exposure is improved from 67.7% to 53.0 %, as compared to previously reported MoS2 inverters with LSLs.
关键词： light-shield layers (LSLs),GaN FETs,photosensitive inverters,MoS2 FETs,biosensors,low noise margin
更新于2025-09-09 09:28:46