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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - 10 kW High Efficiency Compact GaN-Based DC/DC Converter Design
摘要： Gallium-nitride high-electron-mobility transistors (HEMTs) have shown their distinct advantages over silicon devices in the power converter design, including high switching speed, no reverse recovery loss, high switching frequency and compact package. This helps to build a high-efficiency and high-power-density 10 kW LLC resonant converter. A switching cell with two paralleled 650V 60A enhanced-mode GaN HEMTs are proposed including layout consideration and thermal management. The switching cell is adopted at the primary and secondary side separately in the converter. An integrated high frequency litz-wire transformer is presented with its optimization process. With the 3D package of the converter structure using the GaN-based switching cell and the litz-wire transformer, the converter achieves 97.9% peak efficiency under full power and 131 W/in3 (8 kW/L) power density.
关键词： Gallium nitride (GaN),litz wire,LLC resonant converter,transformer,DC/DC converter
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - An Ultrafast Discrete Short-Circuit Protection Circuit for GaN HEMTs
摘要： Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) are being designed into power electronic systems due to the fast switching capability. The GaN-based converters obtain higher efficiency, smaller size, and lower cost from the system point of view. On the other hand, the fast-switching characteristic of GaN also introduces the challenge of the short-circuit protection (SCP) and over-current protection (OCP). The traditional SCP/OCP methods are either too slow or not practical to the GaN device. Therefore, an alternative SCP/OCP solution which is fast and easy to implement is much desired for GaN HEMT. In this paper, an ultrafast discrete circuit of SCP for GaN HEMTs is proposed. The protection method includes two stages. The first-stage is soft turn-off, and the second-stage is hard turn-off. The soft turn-off can reduce the gate voltage gradually and thus limit the voltage spike on the DC-link. The method has been verified by both SPICE simulation and hardware implementation. The implementation results show that the propagation delay time for first-stage and second-stage are 85 ns and 125 ns, respectively. As a result, the proposed circuit is able to protect GaN HEMTs for short-circuit scenario under different DC-link voltages.
关键词： discrete circuit,short-circuit protection,GaN HEMT,gallium nitride
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Novel monolithically integrated bidirectional GaN HEMT
摘要： Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows for substantially reduced conduction losses in applications such as the multilevel T-type inverter which benefit from power semiconductors with bidirectional voltage blocking capability. In static and dynamic characterizations, the monolithically integrated bidirectional GaN HEMT exhibits similar switching and on-state behavior like conventional unidirectional GaN HEMTs.
关键词： bidirectional,T-type inverter,power semiconductor device,multilevel inverter,switching characteristics,Gallium Nitride,dynamic on-state resistance,HEMTs,integration,semiconductor
更新于2025-09-04 15:30:14
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Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
摘要： Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of Vth stability. The Vth analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on Vth stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the Vth stability of power devices in practical, high-temperature applications.
关键词： high-temperature operation,gallium nitride (GaN),analytical model,high electron mobility transistors (HEMTs),threshold voltage (Vth) stability
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - An X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure
摘要： This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 x 1.3 mm2 (3.6 mm2) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
关键词： MMICs,HEMTs,gallium nitride,low-noise amplifiers,noise figure,scattering parameters
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis
摘要： The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
关键词： Microwave transistors,HEMTs,Gallium nitride,Life testing,C-band,Semiconductor device reliability
更新于2025-09-04 15:30:14
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Magnetic Properties of Pure and Doped Gallium Nitride Nanocrystals
摘要： In the present paper, Ga1?xCoxN, Ga1?xNixN and Ga1?xTbxN (0 ≤ x ≤ 0.1) nanocrystals have been synthesized by a facile solvothermal method. Crystallographic characterization of synthesized materials has been done using powder X-ray diffraction technique. Recorded diffraction patterns reveal the formation of wurtzite (hexagonal) structured GaN nanocrystals. Electron microscopic studies have been carried for the detailed topographical and morphological analyses of synthesized nanomaterials. Recorded electron micrographs indicate the formation of nearly mono-disperse nanoparticles, having average size ～4 nm. Magnetic measurements of doped nanocrystals revealed ferromagnetic behavior at room temperature however pure GaN is diamagnetic at room temperature.
关键词： Crystallography,Doping,Gallium Nitride Nanocrystals,Magnetic Properties
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
摘要： The stability of GaN-on-Si HEMTs with substrate-to-source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under certain conditions. Stability analysis reveals that parasitic inductance in the substrate-loop alone is sufficient for instabilities, even with zero parasitic inductance in the gate- and power-loops. A systematic analytical stability analysis is carried out based on a small-signal equivalent circuit. The theory is verified by measurements using a PCB-embedded 600 V GaN HEMT with integrated gate driver. Adequate damping of the substrate loop resonance enables stable operation of the half-bridge module.
关键词： Semiconductor Device Packaging,Gallium Nitride,Switching Circuits,Circuit Stability,Substrate Potential,Bridge Circuits
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) - Padua (2018.6.25-2018.6.28)] 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) - Characterization and Modeling of the Impact of the Substrate Potential in the Dynamic and Static Behavior of Power GaN-on-Si HEMTs
摘要： The maturity of GaN power transistors grown on conductive Si substrates permits today the integration of gate drivers and half bridges in a monolithic integrated chip. Among others, the back-gating effect arising from the substrate potential poses a challenge for circuit designers and hinders the development of this promising technology. In this paper, we characterize the effect of the substrate potential in the IV characteristics of a commercially available GaN power HEMT. A modified version of the ASM-HEMT compact transistor model which accounts for the effect of the substrate potential on IV and part of the CV characteristics is extracted from these measurements. Through transient simulations of the fitted transistor model, the impact of the bulk potential in the dynamic and static characteristics of power GaN-on-Si HEMTs is investigated.
关键词： substrate potential,power semiconductor device,semiconductor device modeling,Gallium Nitride,current-voltage characteristics,HEMTs
更新于2025-09-04 15:30:14