- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Temperature-dependent electrical properties of <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes on highly doped single-crystal substrates
摘要： Beta-phase gallium oxide (β-Ga2O3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga2O3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.
关键词： power electronics,Schottky barrier diode,wide bandgap material,gallium oxide
更新于2025-09-19 17:15:36
-
Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
-
Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
摘要： The use of ultra-wide bandgap transparent conducting beta gallium oxide (b-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the ShockleyeQueisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
关键词： Bulk photovoltaic effect,Pb(Zr,Ti)O3,Solar cell architecture,Ferroelectric photovoltaics,Ga2O3,Gallium oxide,Transparent conducting oxide,Ultra-wide bandgap semiconductors
更新于2025-09-16 10:30:52
-
Perspective: Ga <sub/>2</sub> O <sub/>3</sub> for ultra-high power rectifiers and MOSFETS
摘要： Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large diameter, relatively inexpensive substrates. These applications include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors, and advanced power management and control electronics. Wide bandgap (WBG) power devices offer potential savings in both energy and cost. However, converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics, and even market models. The performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors benefits from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. Reverse breakdown voltages of over 2 kV for β-Ga2O3 have been reported, either with or without edge termination and over 3 kV for a lateral field-plated Ga2O3 Schottky diode on sapphire. The metal-oxide-semiconductor field-effect transistors fabricated on Ga2O3 to date have predominantly been depletion (d-mode) devices, with a few demonstrations of enhancement (e-mode) operation. While these results are promising, what are the limitations of this technology and what needs to occur for it to play a role alongside the more mature SiC and GaN power device technologies? The low thermal conductivity might be mitigated by transferring devices to another substrate or thinning down the substrate and using a heatsink as well as top-side heat extraction. We give a perspective on the materials’ properties and physics of transport, thermal conduction, doping capabilities, and device design that summarizes the current limitations and future areas of development. A key requirement is continued interest from military electronics development agencies. The history of the power electronics device field has shown that new technologies appear roughly every 10-12 years, with a cycle of performance evolution and optimization. The older technologies, however, survive long into the marketplace, for various reasons. Ga2O3 may supplement SiC and GaN, but is not expected to replace them.
关键词： MOSFETs,β-Ga2O3,rectifiers,power electronics,thermal conductivity,Gallium oxide,Ga2O3,doping,wide bandgap semiconductors,military electronics
更新于2025-09-16 10:30:52
-
Sacrificial layer for laser lift-off process for flexible-display production
摘要： In this study, we developed a new sacrificial layer (SL) for laser transfer process. Metallic substrate i.e. invar foil was temporarily docked to a glass substrate using glass powder. To ensure successful delamination, the SL was pre-deposited between metal foil and glass substrate. For the first time, the SLs were amorphous gallium nitride and non-stoichiometric gallium oxide which were implemented for laser lift off (LLO) processes of metal foil. Bonding of metal foil to glass sheet was performed using heat treatment while debonding was achieved by LLO method. The laser wavelength was 355 nm which was the best fit for full absorption from SL layers. Transmission electron microscopy, element mapping, and energy dispersive X-ray spectroscopy analyses were performed for investigating elements’ migration and bonding-debonding mechanism.
关键词： Gallium oxide,Flexible displays,Gallium nitride,Laser lift-off,Sacrificial layer
更新于2025-09-11 14:15:04
-
Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction
摘要： We report on the fabrication of γ-phase copper iodide (γ-CuI) and beta-gallium oxide (β-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline γ-CuI with predominant (111) plane orientation was deposited on the β-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the γ-CuI/β‐Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300-400 nm wavelength of UV light, corresponding to absorption due to the γ-CuI layer. The UV irradiation-induced photovoltaic action in the γ-CuI/β‐Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications.
关键词： Semiconductors,Electrical properties,Photovoltaic action,Copper iodide,Beta-gallium oxide,Solar-blind radiation
更新于2025-09-11 14:15:04
-
Wearable Gallium Oxide Solar-blind Photodetectors on Muscovite Mica Having Ultra-High Photoresponsivity And Detectivity With Added High Temperature Functionalities
摘要： Wearable Gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room temperature as well as high temperature operations. The ultra-high photoresponsivity of 9.7 A/W is obtained for 5V applied bias at room temperature under 75 μW/cm2 weak illumination of 270 nm wavelength. The detector enables very low noise equivalent power (NEP) of 9×10-13 W/Hz1/2 and ultra-high detectivity of 2×1012 jones which shows the magnificent detection sensitivity. Further, bending tests are performed for robust utilization of flexible detectors up to 500 bending cycles with each bending radius of 5 mm. After 500 bending cycles, device shows slight photocurrent decrease. The bending performances exhibit excellent potential for wearable applications. Moreover, photocurrent and dark current characteristics above room temperature demonstrate the outstanding functionalities till 523K temperature which is remarkable for flexible photodetectors. The obtained results show the potential of Gallium oxide solar-blind photodetectors at room temperature and high temperatures environments which pave the ways for futuristic smart and flexible sensors.
关键词： photoresponse,Gallium Oxide,Solar-blind photodetectors,detectivity,flexible photodetector,Mica
更新于2025-09-11 14:15:04
-
Enhanced activity of β-Ga2O3 by substitution with transition metal for CO2 photoreduction under visible light irradiation
摘要： Gallium oxide semiconductors have been developed as effective photocatalysts for water splitting driven by UV light irradiation, but there is no relevant study for the CO2 photoreduction application. Herein, we report the first investigation of β-Ga2O3 applying to photocatalytic CO2 reduction under visible light irradiation by doping transition metal ions (M = V, Cr, Mn, Fe, Co, Ni and Cu) onto the framework. Using sol-gel method, a series of transition metal ions incorporated β-Ga2O3 have been successfully obtained, in which the transition metal substitution content is 2 mol %. The β-Ga2O3:M photocatalysts are characterized completely by diverse tests (e.g., XRD, XPS, UV-Vis DRS, SEM). The effective replacement of Ga3+ ion by M ions significantly expands the scope of spectral response from UV light to visible light, and Fe3+, Co2+, Ni2+ significantly enhance the photocatalytic activity under visible light irradiation. In these cases, CO and H2 are evolved as the reduction products from CO2 and H+ by the generated electrons, respectively. Among these effective catalysts we prepared, β-Ga2O3:Ni exhibits the most substantial CO formation rate of 14.3 μmol/h at 30 °C, and the selectivity for CO evolution exceeds 60.9 %. Furthermore, the CO formation rate increases to 24.6 μmol/h after loading of Ag as the co-catalyst. The stability of the Ag/β-Ga2O3:Ni are verified after five cycle of CO2 photoreduction under visible light.
关键词： transition metal substituted,visible light irradiation,CO2 photoreduction,gallium oxide
更新于2025-09-10 09:29:36
-
Effect of chemical action on the chemical mechanical polishing of β-Ga2O3(100) substrate
摘要： Chemical mechanical polishing (CMP) is an essential processing step to realize ultra-precision machining of the fragile material Ga2O3 crystal and obtain ultra-smooth and undamaged crystal surface. The chemical auxiliary polishing mechanism of Ga2O3 in the CMP process was studied considering that the chemical action directly affects the CMP result. First, H3PO4 and NaOH were used to regulate the pH of slurry. This slurry was then applied to the CMP experiment of Ga2O3, and the corrosion test of Ga2O3 was implemented in H3PO4 and NaOH solutions. Second, the influence of the slurry with different acids or bases on the polishing result was analyzed. Finally, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the influence of the corrosive action on the chemical structure of the crystal surface. Results showed that the slurry prepared by H3PO4 was more suitable for the CMP of Ga2O3 than that prepared by NaOH. The polishing efficiency was enhanced by approximately 20% and the surface quality was improved, with surface roughness of 0.21 nm. This study provides a reference for preparing the slurry of Ga2O3.
关键词： Etching,Gallium oxide,Chemical mechanical polishing
更新于2025-09-10 09:29:36
-
Thermal characterization of gallium oxide Schottky barrier diodes
摘要： The higher critical electric field of β-gallium oxide (Ga2O3) gives promise to the development of next generation power electronic devices with improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-silicon carbide (SiC) and gallium nitride (GaN). However, it is expected that Ga2O3 devices will encounter serious thermal issues due to the poor thermal conductivity of the material. In this work, self-heating in Ga2O3 Schottky barrier diodes under different regimes of the diode operation was investigated using diverse optical thermography techniques including thermoreflectance thermal imaging, micro-Raman thermography, and infrared thermal microscopy. 3D coupled electro-thermal modeling was used to validate experimental results and to understand the mechanism of heat generation for the diode structures. Measured topside and cross-sectional temperature fields suggest that device and circuit engineers should account for the concentrated heat generation that occurs near the anode/Ga2O3 interface and/or the lightly doped drift layer under both forward and high voltage reverse bias conditions. Results of this study suggest that electro-thermal co-design techniques and top-side thermal management solutions are necessary to exploit the full potential of the Ga2O3 material system.
关键词： Schottky barrier diodes,thermal characterization,electro-thermal modeling,gallium oxide,optical thermography
更新于2025-09-10 09:29:36