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Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
摘要： We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals an order of magnitude lower density of interface traps at the AlN/SiC interface than at nitrided SiO2/SiC interfaces. Electron trapping in bulk traps within the AlN is significant when the MIS capacitors are biased into accumulation resulting in a large flatband voltage shift towards higher gate voltage. This process is reversible and the electrons are fully released from the AlN layer if depletion bias is applied at elevated temperatures. Current-voltage (IV) analysis reveals that the breakdown electric field intensity across the AlN dielectric is 3–4 MV/cm and is limited by trap assisted leakage. By depositing an additional SiO2 layer on top of the AlN layer, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having much impact on the quality of the AlN/SiC interface.
关键词： AlN/4H-SiC interface,MIS capacitors,Gate dielectrics
更新于2025-09-23 15:22:29
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Solution-processed organic field-effect transistors with cross-linked poly(4-vinylphenol)/polyvinyl alcohol bilayer dielectrics
摘要： A single-layer gate dielectric cannot meet the requirements of large permittivity (k) and low surface polarity for fabricating low-operating-voltage, high-performance OFETs. Here, we have designed a bilayer gate dielectric consisting of a low-k cross-linked poly(4-vinylphenol) (CL-PVP) in contact with an active layer to provide a low polar surface and an underneath high-k polyvinyl alcohol (PVA) layer to ensure a high capacitance. The results show that the CL-PVP/PVA bilayer not only offers a smooth and uniform surface with low polarity and low surface energy as well as good solvent resistance for efficient carrier transport, but also possesses a relatively high capacitance and low leakage current for low threshold and operating voltages. We have utilized this bilayer dielectric to fabricate OFETs based on a conventional semiconducting polymer poly(3-hexylthiophene) (P3HT). High overall device performances have been achieved in the devices with a mobility of 0.1 cm2V-1s-1. The maximum density of trap states at the interface between the P3HT film and the CL-PVP/PVA bilayer is estimated to be 7.10×1012 cm-2 eV-1, further proving that this bilayer dielectric provides a high quality interface for P3HT. The CL-PVP/PVA bilayer is thus a promising candidate as a gate dielectric for fabricating high-performance organic or even organic-inorganic hybrid perovskite transistors by a solution processing technique.
关键词： P3HT OFETs,gate dielectrics,low-k CL-PVP/high-k PVA bilayer,dielectric and surface properties
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Evaluating the Electricity Production and Energy Saving from Transparent Photovoltaics for Windows in Commercial Buildings
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Is Damp Heat Degradation of c-Si Modules Essentially Universal?
摘要： A pentacene (C22H14)-based high-voltage organic thin-film transistor (HVOTFT) was demonstrated on both a rigid and a flexible substrate. The HVOTFT showed minimal degradation of the current–voltage (I–V ) characteristics under flexure. Consistent with the previous reports on amorphous silicon (a-Si) TFTs, the offset drain/source structure enabled high-voltage operation, allowing for the HVOTFT to switch very large drain-to-source voltages (VDS > 300 V) with a relatively lower controlling voltage (0 V < VG < 20 V). The HVOTFT was evaluated with three different gate insulators to assess how the dielectric constant and interface states influence device performance. Due to the high electric field generated in the device, the HVOTFT suffered from impeded charge injection into the gated semiconductor channel, similar to that reported in a-Si-based high-voltage TFTs, as well as from a nonsaturating I–V characteristic behavior similar to the short-channel effects found in FETs. A field plate was implemented to improve charge injection into the gated semiconductor channel. Output characteristics of the HVOTFT were numerically corrected to demonstrate that the device I–V can be modeled with the existing Si-based FET models.
关键词： Flexible substrates,high-κ gate dielectrics,organic thin-film transistors (HVTFTs),high-voltage semiconductors
更新于2025-09-16 10:30:52
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Deposition and Determination of Band Alignment of Al2O3/Si Gate Stacks by New CVD Chemistry
摘要： Compared to other precursors, dimethyl aluminum hydride [(CH3)2AlH] has high vapor pressure of 2 torr at room temperature and a potential to form alumina films by CVD/ALD with low carbon impurity. Additionally, low deposition temperature of dimethyl aluminum hydride will avoid the formation of low-k interfacial layer during deposition, which is suitable for the MOS device fabrication. In this study, Al2O3 thin films have been deposited successfully from dimethyl aluminum hydride and O2 to investigate the MOCVD behaviour as well as the observation of the band alignment of deposited Al2O3/Si gate stacks.
关键词： Precursor,High-k gate dielectrics,Band alignment,Thermal stability
更新于2025-09-04 15:30:14