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Electrical Transport Properties of Thin Film Composed of a-ZnO Nanorods
摘要： Background: Due to its wide band gap, high exciton binding energy and high breakdown strength, the nanostructures of ZnO may find applications for electronic, photonic devices, and high-frequency applications. Objective: The aim of the present work is to study electrical transport of thin film composed of a-ZnO nanorods. Method: Physical vapour condensation method was employed to fabricate the nanorods of ZnO. The morphology of these nanorods was investigated with the help of scanning electron microscope. X-ray diffraction pattern of as-prepared thin film was recorded using X-ray diffractometer. For dc conductivity measurements, four-probe method was used. Result: The as-prepared ZnO nanorods have diameter ranging from 10-20 nm and the length is of order of few hundred nanometers. XRD pattern of film composed of ZnO nanorods suggests the amorphous nature. Temperature dependence of dc conductivity has been studied over the temperature range of (297- 4.2K). For the temperature range of 297-120K, Mott’s three dimensional variable range hopping (VRH) is applied to explain the electrical conduction. For lower temperature range (120 - 4.2K), 2D-variable-range hopping in localized states near the Fermi level may be responsible for the transport of carriers. Conclusion: Variable range hopping mechanism (VRH) has been suggested for the entire temperature range (298-4.2K) on the basis of temperature dependence of dc conductivity data, which changes from 3D to 2D on moving to lower temperatures side (below 125K).
关键词： physical vapour condensation technique,variable range hopping,XRD,ZnO nanorods,SEM,Mott’s parameters,electrical conduction mechanism
更新于2025-09-23 15:22:29
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High-specific-detectivity, low-dark-current Ge nanowire metal-semiconductor-metal photodetectors fabricated by Ge condensation method
摘要： We have investigated Ge nanowire (NW) metal-semiconductor-metal (MSM) photodetectors with high specific detectivity and low dark current, in which various sizes Ge NWs were fabricated by three-dimensional (3D) Ge condensation techniques. It has been demonstrated that the photocurrent gain increases significantly from 6.31×104 to 4.47×106 with the reduction of Ge NW width from 170 to 35 nm. A low dark current of 5.1 nA and an ultra-high specific detectivity of 1.26×1014 cm·Hz1/2·W-1 at 560 nm under 0.51 V bias are achieved for the 35 nm wide Ge NW photodetector. It has been proposed that the interface states provided by SiGeOx formed during Ge condensation process serve as electron traps to generate photogating effect, resulting in high photocurrent gain and high specific detectivity in the MSM photodetector. The fully complementary metal-oxide-semiconductor (CMOS) compatible and scalable process suggests a great potential of the Ge NW for low cost, high performance near infrared photodetectors.
关键词： gain,Ge nanowire photodetector,Ge condensation technique,photogating effect
更新于2025-09-12 10:27:22