Design of a Si-based Lattice-matched GeSn/SiGeSn Multi-quantum-well Laser

摘要： By calculating the heterojunction band alignment of GeSn/SiGeSn, a Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser was designed, where three Ge0.9Sn0.1 layers act as wells separated by three Si0.14Ge0.71Sn0.15 layers as barriers. The maximum TE gain reaches 7000 cm?1 at 0.5 eV, and the maximum TM gain reaches 5500 cm?1 at 0.52 eV. The modal gain of the Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser we proposed and designed can reach 100 cm?1 with a current density of 5 kA/cm2. The result indicates that it is possible to obtain a Si-based laser.