Reference Module in Materials Science and Materials Engineering || Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆

摘要： The III-nitrides of aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN) and their solid solutions form most commonly in the low-temperature wurtzite crystal structure shown in Fig. 1(a). Overall, this structure possesses a hexagonal unit cell with lattice constants c (o00014 axes) and a (o11204 axes). The atomic arrangement within this structure consists of two interpenetrating, closest packed metal and nitrogen lattices in which each atom of one type is bonded to four atoms of the other to form AB4 tetrahedra. The space group is P63mc.