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Reference Module in Materials Science and Materials Engineering || Wafer Bonding
摘要： Wafer bonding has been an important and critical technology in the development of micromachined sensors, actuators, microsystems, and their packaging for many decades. It is also being used in the fabrication of integrated circuits (ICs) and the formation of composite materials and wafers needed in advanced circuit technologies. Wafer, or die, bonding refers to the process whereby two or more wafers of similar or dissimilar materials are, often permanently, attached or bonded together. The individual wafers might have already been through previous fabrication steps to form various features on them, or might just be plain wafers.
关键词： Wafer Bonding,Microsystems,ICs,Packaging,MEMS
更新于2025-09-23 15:21:21
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A facile method for direct bonding of single-crystalline SiC to Si, SiO2, and glass using VUV irradiation
摘要： Single-crystalline silicon carbide is an attractive material for power electronics. However, it is difficult to achieve the direct bonding of SiC to conventional Si-based materials (e.g., Si, SiO2, and glass) due to the large mismatch in coefficients of thermal expansion and lattice constants. To solve the bottleneck, we present a facile direct bonding method using vacuum ultraviolet (VUV) surface irradiation for a robust combination of SiC to Si, SiO2, and glass at low temperatures (≤ 200 oC). The mechanisms behind the VUV-irradiated bonding of SiC to Si-based materials were also investigated. According to surface characterizations, VUV irradiation can lead to smooth and hydrophilic surfaces, which are beneficial for direct bonding in humid air. The tight and defect-free SiC/Si, SiC/SiO2 and SiC/glass bonding interfaces were confirmed by transmission electron microscopy. In particular, the enriched carbon transition layers were formed on the side of silicon carbide because of the oxidation and sputtering of Si atoms during VUV irradiation. This will possibly improve the bonding interfaces and contribute to the enhanced bonding strengths. Moreover, the SiC/glass bonded pair exhibited relatively high optical transparency in the UV-Vis range. Therefore, the direct bonding of single-crystalline SiC and heterostructure Si-based materials offers great potentials for high-performance power electronics, as well as micro/nanofluidic devices.
关键词： direct bonding,vacuum ultraviolet,interface,silicon carbide
更新于2025-09-23 15:21:21
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<i>(Invited)</i> Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review
摘要： We developed high gettering capability silicon wafers for advanced CMOS image sensors using hydrocarbon molecular ion implantation and surface activated direct wafer bonding (SAB). We found that this novel wafer has three unique characteristics for the improvement of CMOS image sensor device performance. The first is metallic impurity gettering capability in the hydrocarbon ion implantation projection range during CMOS device fabrication. The second is the oxygen out-diffusion barrier effect; this wafer can control out-diffusion to the device active region from the CZ grown silicon substrate during CMOS device heat treatment. The third is the hydrogen passivation effect; hydrogen passivates to the Si/SiO2 gate oxide interface state defects which out-diffuse to the device active region from the hydrocarbon ion implantation projection range during the CMOS device fabrication. Moreover, we demonstrated that this novel wafer can improve the pn-junction leakage current under the actual device fabrication.
关键词： CMOS image sensors,hydrocarbon molecular ion implantation,surface activated direct wafer bonding,gettering capability,oxygen out-diffusion barrier,hydrogen passivation
更新于2025-09-23 15:21:21
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Collective Die Direct Bonding for Photonic on Silicon
摘要： Optoelectronic devices usually needs heterostructure integration with III/V devices integrated on silicon circuits. As throughput placement are more important than placement precision, collective die to wafer bonding is an interesting process for these applications. Moreover as light should be propagated through the bonding interface, minimizing interfacial material is mandatory. Collective direct bonding of die to wafer is then proposed. The bonding yield as well as the first placement accuracy is evaluated.
关键词： III/V integration,Collective Die Direct Bonding,Silicon Photonics,Photonic on Silicon
更新于2025-09-23 15:21:21
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[IEEE 2019 International 3D Systems Integration Conference (3DIC) - Sendai, Japan (2019.10.8-2019.10.10)] 2019 International 3D Systems Integration Conference (3DIC) - Development of Laser-Assisted Bonding with Compression (LABC) Process for 3D IC Integration
摘要： Laser-Assisted Bonding with Compression (LABC) technology with NCF was proposed to accomplish the productivity and process reliability at the same time. A quartz block as a header was used to deliver a pressure to the devices because of its extremely low absorption of the laser during the bonding process. Newly developed NCF for LABC was designed to have stability on a hot stage and to show solder wetting and fast curing with no void and optimal fillet during the LABC bonding process. As the laser is used as a heat source, the uniform heat should be provided on each interconnection without any damages on chip or a substrate. 780μm-thick daisy chain top and bottom chips with the minimum pitch of 30μm and bump number of about 27,000 were successfully bonded using the LABC and NCF film.
关键词： throughput,non-conductive film,laser-assisted bonding,bonding performance,TCB,thermal compression bonding,NCF,LABC,compression
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) - Zatoka, Ukraine (2018.9.9-2018.9.14)] 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) - Optical and Thermal Analysis of PVB Encapsulant Polymer Functionalized with Luminescent Organic Dye as Emerging Material for Photovoltaic Application
摘要： Wireless sensor networks (WSNs) can utilize the unlicensed industrial, scienti?c, and medical (ISM) band to communicate the sensed data. The ISM band has been already saturated due to the overlaid deployment of WSNs. To solve this problem, WSNs have been powered up by cognitive radio (CR) capability. By using CR capability, WSNs can utilize the spectrum holes opportunistically. The sensor nodes, which need large bandwidth to transmit their sensed data from source to destination require some scheme, which should be able to provide them a wide band channel whenever required. Channel bonding (CB) is a technique through which multiple contiguous channels can be combined to form a single wide band channel. By using CB technique, CR-based WSN nodes attempt to ?nd and combine contiguous channels to avail larger bandwidth. In this paper, we show that by increasing the number of channels, the probability of ?nding contiguous channels decreases. Moreover, we then propose a primary-radio (PR) user-activity-aware CB algorithm and compare it with three state-of-the-art schemes: SWA, KNOWS, and AGILE. It has been demonstrated through extensive NS-2 simulations that intelligent CB decisions can reduce harmful interference to PR nodes. We ?nd that CB in CR sensor networks attempts to provide greater bandwidth and utilizes the spectrum effectively.
关键词： cognitive radio,dynamic spectrum access,wireless sensor networks,Channel bonding
更新于2025-09-23 15:21:01
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[IEEE 2019 20th International Conference on Electronic Packaging Technology(ICEPT) - Hong Kong, China (2019.8.12-2019.8.15)] 2019 20th International Conference on Electronic Packaging Technology(ICEPT) - Identification of essential factors causing solder bridging of right-angle solder interconnects in laser jet solder ball bonding process
摘要： Solder bridging is a commonly seen and serious processing defect in electronic packaging, which may lead to short circuit even absolute failure of electronic devices and products. Solder bridging may occur in all types of solder interconnects and in each of soldering processes during manufacturing journey, for example, in ball grid array solder interconnects and three-dimensional (3D) interconnects, as well as in wave soldering and reflow soldering assemblies. With the increasing trend towards miniaturization and multifunction, the pitch and size of solder interconnects have been scaling down. The finer pitch and decreased size of solder joints greatly increase the difficulty of soldering process and the solder bridging defect is more likely to appear. Notably, the laser jet solder ball bonding (LJSBB) with the advantages of localized heating and higher energy inputting provides a novel soldering technology for 3D packaging, for instance, the right-angle solder interconnects and temperature-sensitive components. When fabricating the right-angle solder interconnects, the liquid solder ball is blown by the protected N2 flow and hardly stays firmly in place during the LJSBB process, thus the solder bridging occurs more often in the LJSBB process. Under such circumstances, it is necessary to identify the essential factors causing solder bridging of right-angle solder interconnects and seeking the improvement measures for mass production.
关键词： displacement,solder bridging,poor wetting,laser jet solder ball bonding,right-angle solder interconnect
更新于2025-09-23 15:21:01
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Dynamic analysis of a multilayered piezoelectric two-dimensional quasicrystal cylindrical shell filled with compressible fluid using the state-space approach
摘要： The state-space approach is developed to analyze the dynamic behaviors of a multilayered two-dimensional piezoelectric quasicrystal circular cylinder filled with the compressible fluid. With simple support at both ends, the hollow cylindrical shell has imperfect bonding between the layers. The analytical solution of a homogeneous cylindrical shell has been derived based on the state equations. The general solution for the corresponding multilayered case is also obtained by utilizing the propagator matrix method. The numerical results present the natural frequencies in free vibration with different length-to-radius and radius-to-thickness ratios. The critical load and dynamic behaviors of the model are exactly predicted in the axial buckling problem. For the impulse case, the influences of the density of the filled fluid and coefficients of interfacial imperfections on the dynamic responses are also discussed.
关键词： Multilayered piezoelectric quasicrystal,Compressible fluid,State-space approach,Dynamic analysis,Imperfect bonding
更新于2025-09-23 15:21:01
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Flexible OLED display with 620?°C LTPS TFT and touch sensor manufactured by weak bonding method
摘要： By weak bonding method, the first organic light-emitting diode (OLED) display with 620(cid:1)C low-temperature poly-silicon (LTPS) thin film transistor (TFT) and touch sensor, without polyimide (PI) substrate, formed on glass substrates is transferred to non-PI flexible substrates. After transfer, the display image is free from defect, and touch sensor functions normally. Compared with device made on PI substrate, the advantages of device stability and pitch variation by transferring are shown.
关键词： touch sensor,mechanical debonding,OLED,PI-free,weak bonding,LTPS
更新于2025-09-23 15:21:01
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Realization of deep-blue TADF in sterically controlled naphthyridines for vacuum- and solution-processed OLEDs
摘要： Narrow-band deep-blue (emission peak < 460 nm) TADF emitters are in demand for commercial OLED display applications, yet the development of efficient emitters with low efficiency roll-off is very challenging. To address this issue herein we studied carbazole-naphthyridine (donor-acceptor) based blue-emitting TADF compounds, which were designed by considering both H-bonding and sterically controlled charge-transfer (CT) interactions between D and A units. Methyl substitution employed at the 1st position of t-butyl-carbazole donors was found to affect CT strength and consequently TADF properties of the studied compounds enabling significant reduction of delayed fluorescence lifetime (down to 3.1 μs) and enhancement of reverse intersystem crossing rate (up to 106 s-1). The naphthyridines were demonstrated to hold great potential for deep-blue TADF emitters suitable for both vacuum- and solution-processed TADF OLEDs. The optimized devices with 7 wt% of naphthyridine emitter in weakly polar mCP host delivered external quantum efficiencies (EQEs) of up to ~17.6% and ~13.5% for vacuum- and solution-processed OLEDs, respectively. Unsubstituted naphthyridine exhibited deep-blue (λmax < 460 nm) and narrow-band (FWHM = 66 nm) electroluminescence, whereas more twisted methyl-substituted compound expressed broader band (FWHM >80 nm) sky-blue (λmax ? 480 nm) emission. The demonstrated emitters are among the best-performing conventional D-A-type blue/deep-blue TADF emitters in terms of EQE and efficiency roll-off properties of their devices.
关键词： H-bonding,carbazole,deep-blue,charge-transfer,OLED,TADF,naphthyridine
更新于2025-09-23 15:21:01