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Analysis of Cu doping concentration on PbS thin films for the fabrication of solar cell using feasible nebulizer spray pyrolysis
摘要： This report portrays the analysis of Cu doping concentration (%) on PbS thin films prepared by feasible nebulizer spray technique. The doping percentage of Cu was increased from 0% to 8% in steps of 2%. X-ray diffraction study of the films evinces the nature of the films as polycrystalline with simple cubic crystal structure. The calculated crystallite size was varied from 55 to 41 nm on increasing the Cu doping concentration. SEM/AFM studies proclaim that the cubic shaped grains have covered the entire film surface. The shape of grains was amended with respect to the increase in Cu doping concentration. An elevation in band gap from 1.61 eV to 2.10 eV was spotted for the raise in Cu doping concentration from 0% to 6%. The near band edge emission peak at 575 nm was sensed from PL spectra in which the intensity was enhanced. Hall Effect measurement declared the p-type conductivity nature for the prepared PbS films. Resistivity and carrier-concentration values are 0.73×103 Ωcm and 6.04×1013 cm-3 respectively for 6% Cu doped PbS thin films. Efficiency for the solar cell FTO/n-CdS/p-Cu:PbS structure constructed with 6% Cu doped PbS film is about 0.68%.
关键词： X-ray diffraction,PL spectra,Hall Effect measurement,AFM/SEM,Cu doped PbS film
更新于2025-11-21 11:18:25
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Effect of substrate temperature on the properties of RF sputtered CdS thin films for solar cell applications
摘要： We report the effect of substrate temperature (25–300 °C) on the structural, optical and electrical properties of Cadmium Sulphide (CdS) thin films deposited onto glass substrate by Radio Frequency (RF) magnetron sputtering. The structural, morphological, optical and electrical properties of the films were characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), UV–VIS-NIR spectroscopy and Hall Effect measurement respectively. The XRD studies showed that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along the (0 0 2) plane parallel to the substrate surface. The XRD data analysis further revealed the crystallite size of the nanocrystalline films i.e. 22–24 nm exhibiting the fact that crystallite size increased with increasing the substrate temperature. The FE-SEM images along with energy dispersive spectroscopy (EDS) studies confirmed the homogeneous, compact and pin-hole free surface morphology. The UV–VIS-NIR studies unveiled the optical transmittance in the range of 75–90% after 540 nm of the wavelength of light. The optical band gaps were found to be decreasing from 2.34 eV to 2.26 eV with increasing the substrate temperature. The films were characterized as n-type as evidenced by the Hall Effect measurement. The carrier mobility was found to be increasing gradually from 5.53 to 12.57 cm2/V·s by increasing the substrate temperature from room temperature to 300 °C due to the improvement of crystalline quality and grain size of the films. The results showed good optical and electrical properties of the films deposited at 300 °C which are suitable to use as window layer in thin film based solar cells.
关键词： CdS,UV–VIS-NIR,XRD,Hall effect measurement,Thin films,Substrate temperature,RF sputtering
更新于2025-09-23 15:21:01
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Deposition of p-type Al doped PbS thin films for heterostructure solar cell device using feasible nebulizer spray pyrolysis technique
摘要： Doping of metal atoms with PbS thin films can make significant influence on the structural and electron transport properties which makes it suitable for photovoltaic and other device applications. The objective of the present work is to study the structural, morphological, optical and electrical properties of PbS:Al thin films as a function of different Al doping percentage. PbS and Al doped PbS thin films were deposited using Nebulizer Spray Pyrolysis (NSP) on soda lime glass substrates by varying Al doping level from 0 wt% to 8 wt%. Polycrystalline nature with face centered cubic crystal structure was noticed for all the prepared films from XRD pattern. The orientation along (200) plane was observed for all the prepared films. From AFM analysis, the observed surface roughness values were considerably decreased on increasing the Al doping concentration. The calculated optical band gap values exhibits increasing trend and shifted from 1.54 eV to 1.66 eV on increasing Al doping concentration. The electrical resistivity value of the PbS:Al thin films were reduced from 3.08 ? 103 to 1.63 ? 103 Ωcm with raise in Al doping level. The solar cell efficiency for FTO/n-CdS/p-PbS:Al structure constructed from 6% of Al doped PbS film was about 0.44%.
关键词： SEM/AFM,Hall effect measurement,PbS:Al structure,UV visible,Solar cell,X-ray diffraction
更新于2025-09-19 17:13:59
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[IEEE 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Dhaka, Bangladesh (2019.5.3-2019.5.5)] 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Electrical Properties of CSS Deposited CdTe Thin Films for Solar Cell Applications
摘要： CdTe is a very potential absorber material for thin film solar cell application. In this work CdTe thin films (TF) were deposited on CdS thin films by close-spaced sublimation (CSS) technique at different source and substrate temperature in inert gas condition. To bring out the optimum temperature set for CSS deposited CdTe films, several experiments were done. The process pressure of the chamber during deposition was maintained at 1.5 Torr in a dynamic condition. The effects of deposition temperature on the electrical properties of the as-deposited CdTe films were investigated by Hall Effect measurement. The films were deposited at 610 0C, 630 0C, 650 0C and 670 0C source temperatures. The first three films showed p-type conductivity while n-type conductivity appeared in the film deposited at 670 °C. The hole concentration of the as-grown p-type CdTe films followed an upward trend with the increase of source temperature and it reached a peak value at 650 0C. The highest hole mobility was observed for the lowest source temperature. However, the resistivity of the CdTe films was found increasing with the increase of source temperature. Thus, the CdTe thin film deposited at 650 0C showed better electrical properties for solar cell applications.
关键词： Solar cells,Electrical properties,Close-spaced sublimation,Hall Effect measurement,CdTe thin film
更新于2025-09-16 10:30:52
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Regulation of Substrate-Target Distance on the Microstructural, Optical and Electrical Properties of CdTe Films by Magnetron Sputtering
摘要： Cadmium telluride (CdTe) ?lms were deposited on glass substrates by direct current (DC) magnetron sputtering, and the effect of substrate-target distance (Dts) on properties of the CdTe ?lms was investigated by observations of X-ray diffraction (XRD) patterns, atomic force microscopy (AFM), UV-VIS spectra, optical microscopy, and the Hall-effect measurement system. XRD analysis indicated that all samples exhibited a preferred orientation along the (111) plane, corresponding to the zinc blende structure, and ?lms prepared using Dts of 4 cm demonstrated better crystallinity than the others. AFM studies revealed that surface morphologies of the CdTe ?lms were strongly dependent on Dts, and revealed a large average grain size of 35.25 nm and a high root mean square (RMS) roughness value of 9.66 nm for ?lms fabricated using Dts of 4 cm. UV-VIS spectra suggested the energy band gap (Eg) initially decreased from 1.5 to 1.45 eV, then increased to 1.68 eV as Dts increased from 3.5 to 5 cm. The Hall-effect measurement system revealed that CdTe ?lms prepared with a Dts of 4 cm exhibited optimal electrical properties, and the resistivity, carrier mobility, and carrier concentration were determined to be 2.3 × 105 ?·cm, 6.41 cm2·V?1·S?1, and 4.22 × 1012 cm?3, respectively.
关键词： optical properties,substrate-target distance,pinhole,CdTe ?lms,Hall-effect measurement system
更新于2025-09-04 15:30:14