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- 摘要
- 关键词
- 实验方案
- 产品
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<i>(Keynote)</i> Silicon-Organic Hybrid Photonics: Integration of Electro-Optical Polymers in a Photonic Integrated Circuit Technology
摘要： In this work, we present recent results on the hybrid integration of electro-optical organic materials in a photonic integrated circuit (PIC) technology. We review some of the identified challenges regarding process compatibility and present preliminary results on the integration of organic materials in a PIC technology using a 0.25 μm SiGe BiCMOS pilotline. Here, we are focusing on electro-optical applications towards high-speed modulators with ultra-low energy consumption.
关键词： Ultra-Low Energy Consumption,Silicon-Organic Hybrid Photonics,Electro-Optical Polymers,High-Speed Modulators,Photonic Integrated Circuit
更新于2025-09-16 10:30:52
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Silicon-Organic Hybrid Photonic Devices in a Photonic Integrated Circuit Technology
摘要： In this work, we present recent results on the hybrid integration of electro-optical organic materials in a photonic integrated circuit (PIC) technology. We review some of the identi?ed challenges regarding process compatibility and present experimental results on the integration of organic materials in a PIC technology using a 0.25 μm SiGe BiCMOS pilotline. Here, we are focusing on electro-optical applications toward high-speed modulators with ultra-low energy consumption.
关键词： photonic integrated circuit,high-speed modulators,electro-optical materials,silicon-organic hybrid,ultra-low energy consumption
更新于2025-09-16 10:30:52
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - 20-Gb/s Silicon Optical Modulators for the 2 μm Wavelength Band
摘要： We demonstrate silicon-on-insulator based high speed modulators working at a wavelength of 1950 nm. The carrier-depletion Mach-Zehnder interferometer modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and modulation efficiency (VπLπ) of 2.68 Vcm at 4 V reverse bias.
关键词： high speed modulators,1950 nm,carrier-depletion,silicon-on-insulator,Mach-Zehnder interferometer
更新于2025-09-10 09:29:36