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Efficiency Enhancement of Perovskite CsPbBr <sub/>3</sub> Quantum Dot Light-emitting Diodes by Doped Hole Transport Layer
摘要： Balanced charge injection is essential to high-performance Perovskite CsPbBr3 quantum dot-based light-emitting diodes (QLEDs). However, low mobility of hole-transport materials (HTMs) severely restrict improving performance of QLEDs. Herein, we provide a novel HTMs to improve the highest occupied molecular orbital (HOMO) energy level structure and carrier mobility by doping poly (9-vinlycarbazole) (PVK) and poly [N, N′-bis(4-butylphenyl)-N, N′-bis(phenyl) benzi-dine] (poly-TPD). We also introduce poly (methyl methacrylate) (PMMA) as electron block layer to further achieve charge injection balance. Finally, an enhanced external quantum efficiency (EQE) of 0.53% and 414.83 cd/m2 was obtained. Compared with the untreated QLED, this result has been 8-fold enhanced, provides a new approach to attain better performance.
关键词： Quantum Dot Light-emitting Diodes,Efficiency Enhancement,Perovskite CsPbBr3,Hole Transport Layer
更新于2025-09-19 17:13:59
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Utilization of poly (4-styrenesulfonic acid) doped polyaniline as a hole transport layer of organic solar cell for indoor applications
摘要： The demand for low dimensional, micro powered and wireless indoor electronic devices has been increasing. To power-up those devices, organic photovoltaic (OPV) cells are being employed. The OPV cells exhibit good spectral matching and mechanical ?exibility, and can harvest arti?cial indoor light energy e?ciently. Hole transport layer (HTL) is an important component of an OPV cell. Water stable, low temperature processable poly (3, 4-ethylene dioxythiophene): poly (4-styrenesulfonic acid) (PEDOT:PSS) based HTL is commonly used in the indoor OPV cells. However, strongly acidic, highly hydrophilic and expensive PEDOT:PSS resulted in the development of cheaper, mildly acidic and less humidity sensitive alternative hole transport material (HTM) for the indoor OPV cells. Here, we utilized an economical and low acidic, water-stable PSS doped polyaniline (PANI) as HTM for a poly (3-hexylthiophene): [6, 6]-indene-C60 bisadduct (P3HT:ICBA) active material-based indoor OPV cell. The ?lm formed by chemically synthesized PANI:PSS exhibited over 90% transmittance and approximately 5.15 eV work function value. The OPV device exhibited higher shunt resistance and greater power conversion e?ciency (PCE) during the operation in an indoor environment. For 1000 Lux white LED light, the device showed around 10% PCE. Furthermore, the device exhibited better stability than PEDOT:PSS HTL based indoor OPV.
关键词： Indoor application,Organic solar cell,Hole transport layer,Poly (4-styrenesulfonic acid) doped polyaniline
更新于2025-09-19 17:13:59
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Effect of the hole transporting / active layer interface on the perovskite solar cell stability
摘要： In the field of photovoltaics, perovskite solar cells have attracted great interest due to their high efficiency combined with a strong potential for low cost and good versatility. One of the main issue concerns the intrinsic stability of these cells. To develop mitigation strategies, there is a critical need for a better understanding of the most plausible degradation mechanisms. This work focuses on the impact of the hole transporting layer (HTL) on the stability of planar NIP perovskite solar cells based on MAPbI3-xClx. From the comparison of two different HTL (P3HT and PTAA), the crucial role of interfacial materials on the stability of a complete device is demonstrated. Even if PTAA-based devices presented better performances in the initial state, their degradation under mild aging conditions (35°C, under dark and inert conditions) is more pronounced than that with the P3HT counterpart. Thanks to complementary characterization tools (infrared spectroscopy, X-ray diffraction, UV-visible absorption, photoluminescence) applied to different stages of the stack assembly (with respectively 3, 4 or 5 layers), a degradation mechanism was identified at the perovskite-PTAA interface. These devices consisting of several extremely thin layers, the interfaces play an important role on the performances and stability of the complete cells. It is a pioneering work in the community, which could be transposed to other devices and architecture.
关键词： Perovskite solar cells,degradation mechanisms,hole transport layer,interfaces,stability
更新于2025-09-19 17:13:59
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Optimization of Hole Injection and Transport Layers for High-Performance Quantum-Dot Light-Emitting Diodes
摘要： High-luminance, e?cient quantum-dot light-emitting diodes (QLEDs) have been achieved by optimizing the balance between the hole injection layer (HIL) and the hole transport layer (HTL). Di?erent concentrations of vanadium oxide (V2O5) and poly[(9,9-dioctyl?uorenyl-2,7-diyl)-co-(4,4’-(4-sec-butylphenyl)diphenylamine)] (TFB) solutions were used to form the e?cient HIL and HTL, respectively, for the QLEDs. The hole injection and transport behavior was characterized by using hole-only devices (HODs). The QLEDs, which were prepared with 0.5 wt.% of V2O5 and 0.1 wt.% of TFB as HIL and HTL, respectively, showed a maximum current e?ciency of 2.27 cd·A?1 and a maximum luminance of 71,260 cd·m?2. Moreover, the turn-on voltage of the device was as low as 2.2 V due to the e?cient carrier injection and transport. The results provide useful information for fabricating high-performance QLEDs.
关键词： Optimization,Hole transport layer,Light-emitting diodes,Quantum-dots,Hole injection layer
更新于2025-09-16 10:30:52
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Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
摘要： Low-temperature atomic layer deposition (ALD) offers significant merits in terms of processing uniform, conformal and pinhole-free thin films, with sub-nanometer thickness control. In this work, plasma-assisted atomic layer deposition (ALD) of nickel oxide (NiO) is carried out by adopting bis-methylcyclopentadienyl-nickel (Ni(MeCp)2) as precursor and O2 plasma as co-reactant, over a wide table temperature range of 50–300 °C. A growth rate of 0.32 ? per cycle is obtained for films deposited at 150 °C with an excellent thickness uniformity on a 4 inch silicon wafer. Bulk characteristics of the NiO film together with its interfacial properties with a triple cation hybrid perovskite absorber layer are comprehensively investigated, with the aim of integrating NiO as hole transport layer (HTL) in a p–i–n perovskite solar cell (PSC) architecture. It is concluded that "key" to efficient solar cell performance is the post-annealing treatment of the ALD NiO films in air, prior to perovskite synthesis. Post-annealing leads to better wettability of the perovskite layer and increased conductivity and mobility of the NiO films, delivering an increase in short-circuit current density (Jsc) and fill factor (FF) in the fabricated devices. Overall, a superior 17.07% PCE is achieved in the post-annealed NiO-based PSC when compared to the 13.98% PCE derived from the one with pristine NiO.
关键词： plasma-assisted ALD,perovskite solar cells,atomic layer deposition,nickel oxide,hole transport layer
更新于2025-09-16 10:30:52
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High-Intensity CsPbBr <sub/>3</sub> Perovskite LED using Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) as Hole Transport and Electron-Blocking Layer
摘要： The majority of highly efficient perovskite light-emitting diodes (PeLED) contain PEDOT:PSS (poly(3,4-ethylenedioxythiophene):polystyrenesulfonate) as hole transport layer (HTL). However, the hygroscopic and acidic nature of PEDOT:PSS may lead to deterioration of PeLED performance. Moreover, due to its inferior electron-blocking properties, an additional electron-blocking layer (EBL) is required to establish charge balance and consequently obtain superior emission characteristics in typically electron-rich PeLED structures. In this work, PTAA (poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)) serving both as HTL and EBL is employed to substitute PEDOT:PSS in PeLED. The perovskite CsPbBr3 is chosen as emissive layer (EML) material due to its high color purity and photoluminescence (PL) quantum yield. Dense CsPbBr3 films are fabricated on PTAA-coated ITO substrates by employing a one-step spin-coating approach based on nonstoichiometric perovskite precursor solutions. To suppress non-radiative recombination, a small amount of methylammonium bromide (MABr) is incorporated in the CsPbBr3 lattice. The resulting films exhibit excellent coverage and PL intensity. PeLED containing pure CsPbBr3 films as EML show a green emission with a peak at 520 nm, maximum luminance of 11,000 cd/m2, an external quantum efficiency (EQE) of 3.3 % and a current efficiency (CE) of 10.3 cd/A. Further enhancement to 21,000 cd/m2, 7.5 % and 27.0 cd/A is demonstrated by PeLED with MABr-doped CsPbBr3 layers.
关键词： PTAA,perovskite light-emitting diodes,PEDOT:PSS,electron-blocking layer,CsPbBr3,hole transport layer
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - High-efficiency soluble thermally activated delayed fluorescent OLED with multilayer hole transport layers
摘要： Solution processed organic light emitting devices (OLEDs) incorporating a soluble thermally activated delayed fluorescent (TADF) emitter were fabricated with poly(N-vinylcarbazole) (PVK), poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB), and TFB/PVK as the multilayer HTL. The device with multilayer HTLs demonstrated the highest external quantum efficiency (EQE) of 6.9%, the lowest driving voltage of 4.8V, and the highest luminance.
关键词： solution processed,soluble TADF,hole-transport layer
更新于2025-09-16 10:30:52
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Highly Efficient Flexible Perovskite Light-Emitting Diodes Using Modified PEDOT:PSS Hole Transport Layer and Polymer-Silver Nanowires Composite Electrode
摘要： Metal halide perovskites have been actively studied as promising materials in optoelectronic devices because of their superior optical and electrical properties, and have also shown considerable potential for flexible devices because of their good mechanical properties. However, the large hole injection barrier and exciton quenching between the perovskite emitter and poly(3,4-ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS) can lead to the reduction in device efficiency. Here, a nonconductive fluorosurfactant, Zonyl FS-300 (Zonyl), is introduced into the PEDOT:PSS hole transport layer, which reduces the hole injection barrier and exciton quenching at the PEDOT:PSS/perovskite interface. Moreover, a flexible perovskite light-emitting diode with a polymer–silver nanowire composite electrode is demonstrated, showing a maximum current efficiency (CEmax) of 17.90 cd A–1, and this is maintained even after 1,000 cycles of bending with a 2.5 mm bending radius.
关键词： flexible perovskite light-emitting diodes,hole transport layer,flexible electrode,silver nanowires (AgNWs),poly(3,4-ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS)
更新于2025-09-16 10:30:52
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Optimizing Lignosulfonic Acid-Grafted Polyaniline as a Hole-Transport Layer for Inverted CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Perovskite Solar Cells
摘要： A conducting polymer of lignosulfonic acid-grafted, polyaniline-doped camphorsulfonic acid (LS-PANI-CSA), created via a low-temperature solution process, has been explored as an efficient hole-transport layer (HTL) for inverted single cation?anion CH3NH3PbI3 perovskite solar cells. The performance of the solar cell was optimized in this study by tuning the morphology and work function of LS-PANI-CSA films using dimethylsulfoxide (DMSO) as a solvent in treatment. Results showed that DMSO washing enhanced the electronic properties of the LS-PANI-CSA film and increased its hydrophobicity, which is very important for perovskite growth. The perovskite active layer deposited onto the DMSO-treated LS-PANI-CSA layer had higher crystallinity with large grain sizes (>5 μm), more uniform and complete surface coverage, and very low pinhole density and PbI2 residues compared to untreated LS-PANI-CSA. These enhancements result in higher device performance and stability. Using DMSO-treated LS-PANI-CSA as an HTL at 15 nm of thickness, a maximum 10.8% power conversion efficiency was obtained in ITO/LS-PANI-CSA/MAPbI3/PCBM/BCP/Ag inverted-device configurations. This was a significant improvement compared to 5.18% for devices based on untreated LS-PANI-CSA and a slight improvement over PEDOT:PSS-based devices with 9.48%. Furthermore, the perovskite based on treated LS-PANI-CSA showed the higher stability compared to both untreated LS-PANI-CSA and PEDOT:PSS HTL-based devices.
关键词： stability,hole-transport layer,hydrophobicity,perovskite solar cells,device performance,work function,lignosulfonic acid-grafted polyaniline,DMSO treatment,conducting polymer
更新于2025-09-16 10:30:52
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Graphene oxide-doped PEDOT:PSS as hole transport layer in inverted bulk heterojunction solar cell
摘要： Transparent poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) is widely used hole conducting material in optoelectronic devices. Secondary doping of PEDOT:PSS enables the tunability of its electronic properties. In this work, graphene oxide (GO) was used as a secondary dopant for PEDOT:PSS and the doped materials (composites) were tested for their efficiency as hole transport material in inverted bulk heterojunction (BHJ) solar cell. The composites were studied to unveil the effects of Coulombic interaction between GO and PEDOT:PSS where we note some segregation of PEDOT phase. We found that the GO majorly interacts with PSS through oxygeneous functional groups which promote the detachment of PEDOT from PSS and segregation of PEDOT. Electrochemical properties with and without illumination revealed some photo-induced changes to surface of the samples. Device performances showed about 2.2% efficiency enhancement when GO doping level was 0.25 (v:v) when compared to that of pristine PEDOT:PSS.
关键词： Hole transport layer,Graphene oxide,PEDOT:PSS,Secondary doping,Bulk heterojunction solar cell
更新于2025-09-16 10:30:52