Effects of HEC Concentration on Silicon Polishing

摘要： Hydroxyethyl cellulose (HEC) is believed to effectively reduce haze level in silicon final polishing. We find that the removal rate(RR) and roughness of the polishing are very sensitive to the concentration of HEC, which can be divided into two concentration ranges. Its machanism is not only absorption occurence on silicon surface but also related to HEC colloid properties. Evidence has shown that HEC covers on the surface of silica sol, and there are three forms of coverage depending on the concentration, which have different effects on the interface between silicon and abrasive during polishing. Combined with steric hindrance, a possible polishing model is discussed based on the existence of HEC which is verifed by coeffiecient of friction force(CoF) according to HEC concentration. The results not only provide guidance for effective silicon polishing, but also imply that colloidal properties of additives with surface activity should be considered in other polishing systems.