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[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - TCM-based Miniaturization Progress of a Square Microstrip Patch Antenna
摘要： A miniaturized square microstrip patch antenna (MPA) is analyzed and designed using the theory of characteristic mode (TCM). The TCM is applied to investigate and adjust the current distribution of the lowest resonance mode that the square patch can support. Based on the current distribution of the concerned mode, the two opposite edges of the patch where the characteristic current mainly concentrates on are curved with quadratic function curves. Then stubs are periodically loaded on the curved-edges, and the current along the curved-edges occurs slight changes. At last, two apertures are etched on the patch, and more current trends to flow along the edges of the apertures. The above three approaches are examined through TCM, and all lead to reduction of resonance frequency of concerned mode. After optimizing the position of the probe-fed, a 60% miniaturization in the size of the square MPA is achieved. The TCM is expected to provide more effective guidance in antenna miniaturization design.
关键词： theory of characteristic mode (TCM),square microstrip patch antenna (MPA),miniaturization
更新于2025-09-04 15:30:14
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[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - Design of a Dual-band Wearable Planar Inverted F Antenna Based on Characteristic Mode Theory
摘要： This paper proposes a new wearable planar inverted F antenna (PIFA). The antenna is co-designed with the ground plane based on characteristic mode theory. To obtain a wide matching bandwidth around 433 MHz, the ground is operated as the main radiator. The 2.4 GHz operating band is realized by embedding a slot within the PIFA patch. The final design shows an extremely small electrical size, relatively wide bandwidths, and reasonable radiation efficiencies in both bands. An analysis of the effect of bending shows the robust performance of the antenna.
关键词： wearable antenna,planar inverted F antenna (PIFA),characteristic mode theory,dual-band antenna
更新于2025-09-04 15:30:14
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[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - Radiation Pattern Reconfigurable Antenna Design Using Characteristic Modes
摘要： In this paper, a radiation pattern reconfigurable antenna is presented, which is able to switch between a bidirectional and a unidirectional radiation pattern. The proposed antenna is conceived from the characteristic mode analysis of two parallel metallic plates, with the same and different sizes. By means of two PIN diodes, the size of the lower plate of the two parallel metallic plates can be modified, changing the behavior of the radiation pattern. During the ON/OFF switching, the operating frequency is shifted, what is solved by introducing a varactor diode in the antenna. Thus, the operating frequency is adjusted for the switching state.
关键词： Radiation pattern,Varactor diode,Characteristic Modes,PIN diode,Reconfigurable antenna
更新于2025-09-04 15:30:14
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Detection of abnormality occurring over the whole cable length by frequency domain reflectometry
摘要： In previous papers, the authors reported that a combination of frequency domain reflectometry and inverse fast Fourier transform can locate the position of occurrence of degradation or abnormality in a polymer-insulated electric cable. This paper demonstrates that this method is also applicable even if the degradation or abnormality occurs uniformly over the entire cable length.
关键词： frequency domain reflectometry,broadband impedance spectroscopy,fault location,characteristic impedance,aging
更新于2025-09-04 15:30:14
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ANALYSIS OF WIDE BAND SCATTERING FROM OBJECTS USING THE ADAPTIVE IMPROVED ULTRA-WIDE BAND CHARACTERISTIC BASIS FUNCTIONS
摘要： The improved ultra-wide band characteristic basis function method (IUCBFM) is an efficient approach to analyze the wide-band scattering problems because the improved ultra-wide characteristic basis functions (IUCBFs) can be reused for any frequency sample in the range of interest. However, the number of the IUCBFs constructed at the highest frequency point is excessive, and the computational complexity will be increased when applying the same number of IUCBFs at the lower frequency points. To mitigate this problem, an adaptive IUCBFs construction method is presented which can decrease the computational complexity at the lower frequency points. In the proposed method, the given frequency band is adaptively divided into multiple sub-bands in consideration of the number of the IUCBFs. The adaptive IUCBFs are obtained at the highest frequency point in each sub-band, which leads to smaller number of IUCBFs and significant reduction of solver time at lower frequency band. The numerical results have demonstrated the accuracy and efficiency of the proposed method.
关键词： characteristic basis function method,computational complexity,radar cross section,wide-band scattering,adaptive construction
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Development of Memristor Characteristic Device Using In-Ga-Zn-O Thin Film
摘要： In this presentation, we propose an amorphous oxide semiconductors (AOSs) In-Ga-Zn-O(IGZO) thin film for a memristor characteristic device. We fabricated the memristor characteristic device active layer using IGZO and electrodes using aluminum by physical vapor deposition (PVD). The Al/IGZO/Al cell device showed the bipolar switching characteristic of a switching voltage 2 and reproducibility 10.
关键词： memristor characteristic,IGZO,amorphous oxide semiconductors,Al
更新于2025-09-04 15:30:14