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Effect of HCl Cleaning on InSb-Al<sub>2</sub>O<sub>3</sub> MOS Capacitors
摘要： In this work, the role of HCl treatments on InSb surfaces and InSb-Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy (XPS) measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200°C and 250°C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using atomic layer deposition (ALD) of Al2O3 at 200°C and 250°C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250°C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (Dit) and hysteresis voltage (VH). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.
关键词： surface cleaning,III-V,ALD,Al2O3,InSb,dielectric interface,MOSCAP,HCl
更新于2025-11-14 17:28:48
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Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
摘要： We fabricated high-electron-mobility transistor structures with InAlN as a barrier layer on 8- or 6-inch Si substrates by using a recently developed high-speed-wafer-rotation single-wafer MOCVD tool. It has been reported that Ga inclusion in the InAlN layer causes serious problems in the control of group III metal composition in some cases, but the samples grown using the tool exhibited an InAlN layer with an abrupt interface and almost no Ga inclusion. Excellent in-wafer uniformity, repeatability, and wafer-to-wafer uniformity of device structure are also reported. The results shown in this paper indicate high performance of the tool in the real production of devices.
关键词： A3. Metalorganic vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III-V materials,B3. High electron mobility transistors
更新于2025-09-23 15:23:52
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Comparison the electron momentum and energy relaxation process in wurtzite GaN, InN and AlN by Monte Carlo method
摘要： At present, both transient and steady transport properties of III-V nitride semiconductors are researched, however, few research concerns about the momentum and energy relaxation process, which will be important during device designing. In order to clarify the fundamental physical process of the relaxation phenomenon, both momentum and energy relaxation process in wurtzite GaN, InN and AlN are studied with the help of classic three valleys Monte Carlo method. Our goal is to understand the relationship of relaxation rate with electric field, temperature and clarify the role of scattering mechanisms during momentum and energy relaxation process. The research shows that when the electric field and temperature are different, the main momentum and energy relaxation mechanisms may be different. For the lower effective mass in the lowest valley for InN, the electrons are more easily accelerated by electric field and scattered into the satellite valleys. The momentum relaxation time is much lower than that of energy relaxation time, the reason is that nearly all scattering mechanisms will relax momentum, but only polar optical phonon and inter-valley scattering relax electron energy. The research here can be used for construct the relaxation model or as a guide for device design.
关键词： Monte Carlo,III-V nitride,Electron momentum and energy relaxation
更新于2025-09-23 15:23:52
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Optimised Performance of Non-Dispersive Infrared Gas Sensors Using Multilayer Thin Film Bandpass Filters
摘要： In this work, performance improvements are described for a low-power consumption non-dispersive infrared (NDIR) methane (CH4) gas sensor using customised optical thin film bandpass filters (BPFs) centered at 3300 nm. BPFs shape the spectral characteristics of the combined mid-infrared III–V based light emitting diode (LED)/photodiode (PD) light source/detector optopair, enhancing the NDIR CH4 sensor performance. The BPFs, deposited using a novel microwave plasma-assisted pulsed DC sputter deposition process, provide room temperature deposition directly onto the temperature-sensitive PD heterostructure. BPFs comprise germanium (Ge) and niobium pentoxide (Nb2O5) alternating high and low refractive index layers, respectively. Two different optical filter designs are progressed with BPF bandwidths (BWs) of 160 and 300 nm. A comparison of the modelled and measured NDIR sensor performance is described, highlighting the maximised signal-to-noise ratio (SNR) and the minimised cross-talk performance benefits. The BPF spectral stability for various environmental temperature and humidity conditions is demonstrated.
关键词： III–V,sensor,methane,thin film,MBE,NDIR,microwave,bandpass,sputter,heterostructure,infrared
更新于2025-09-23 15:23:52
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Morphological study of InGaN on GaN substrate by supersaturation
摘要： The morphology of thin InGaN layers grown on c-plane GaN substrates by metalorganic vapor phase epitaxy (MOVPE) has been studied by atomic force microscopy. Three different morphologies appeared, a stepped surface, large flat two-dimensional (2D) islands and small high three-dimensional (3D) dots. Low growth temperature and high growth rate (i.e. increased vapor supersaturation) changed the InGaN morphology from steps to 2D islands and then 3D dots (when exceeding the critical thickness for 3D dots). Larger miscut angle of GaN substrate changed the morphology from 2D islands to step by decreasing the surface supersaturation of individual terraces. InGaN layers with a stepped morphology had the highest internal quantum efficiency at similar InN mole fraction. InGaN grown on GaN substrate more easily achieved a stepped morphology compared to InGaN on GaN/sapphire templates.
关键词： A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III-V materials,A1. Crystal morphology,B1. Nitride
更新于2025-09-23 15:22:29
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
摘要： We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.
关键词： B3 High electron mobility transistors,B3 Field effect transistors,A3 Organometallic vapor phase epitaxy,A1 Etching,B2 Semiconducting III-V materials
更新于2025-09-23 15:22:29
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InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
摘要： III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), due to its high electron mobility. In the present work, we report on InGaAs FinFETs monolithically integrated on silicon substrates. The InGaAs channels are created by metal–organic chemical vapor deposition (MOCVD) epitaxial growth within oxide cavities, a technique referred to as template-assisted selective epitaxy (TASE), which allows for the local integration of different III-V semiconductors on silicon. FinFETs with a gate length down to 20nm are fabricated based on a CMOS-compatible replacement-metal-gate process flow. This includes self-aligned source-drain n+ InGaAs regrown contacts as well as 4 nm source-drain spacers for gate-contacts isolation. The InGaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. Furthermore, we demonstrate a controlled InGaAs digital etching process to create doped extensions underneath the source-drain spacer regions. We report a device with gate length of 90 nm and fin width of 40 nm showing on-current of 100 μA/μm and subthreshold slope of about 85 mV/dec.
关键词： Integration,MOSFETs,TASE,III-V
更新于2025-09-23 15:22:29
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Zinc blende and wurtzite crystal structure formation in gold catalyzed InGaAs nanowires
摘要： III-V semiconductor nanowires made of materials which have the zinc blende crystal structure in bulk are well known to exhibit either the zinc blende or the wurtzite crystal structure. Understanding and controlling which crystal structure that forms is of highest importance for nanowire applications in a variety of areas. In addition to this, composition control in ternary nanowires is another key technology area for successful nanowire applications. We derive a general model, based on two-component nucleation theory, which we use to explain the so far less understood experimental observations of zinc blende, wurtzite, and mixed crystal structure as a function of growth conditions and composition, x, in gold catalyzed InxGa1-xAs nanowires. An interesting theoretical finding is that the wurtzite and zinc blende phases have different compositions, even if they are nucleated from the same catalyst particle at the same conditions.
关键词： A1. Nanostructures,A1. Nucleation,A1. Crystal structure,B2. Semiconducting III-V materials,B2. Semiconducting ternary compounds
更新于2025-09-23 15:22:29
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Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
摘要： High-quality AlN templates fabricated by sputtering-deposition and post-deposition high-temperature annealing have great potential for deep ultraviolet light-emitting device applications. In this work, we fabricated AlN films on 6H-SiC substrates by sputtering and face-to-face annealing and characterized the structural quality of the AlN films before and after annealing. As reported in previous studies, to accomplish high-quality AlN films on SiC substrates using conventional methods, such as molecular beam epitaxy or metalorganic vapor phase epitaxy (MOVPE), it is important to grow the AlN on the SiC coherently. However, in this work, although the annealed AlN films were fully relaxed from the SiC substrates, or even had tensile strain, the AlN films indicated high crystallinity. The X-ray rocking curve full width at half maximum (XRC-FWHM) values of the 200-nm-thick annealed AlN film were 17 and 246 arcsec for the AlN (0002) and (10–12) diffraction, respectively. Though the annealed AlN film indicated rough surfaces with bunched step structures, the surface morphology was remarkably improved by MOVPE growth and clear atomic step-and-terrace structures were formed. The XRC-FWHM values of the MOVPE-grown AlN were 90 and 239 arcsec for the AlN (0002) and (10–12) diffraction, respectively.
关键词： A1. Stresses,A1. Atomic force microscopy,B1. Nitrides,B2. Semiconducting III-V materials,A1. X-ray diffraction
更新于2025-09-23 15:22:29
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Pyroelectric Property of Binary Nitrides (AlN, GaN and InN)
摘要： The pyroelectric (PY) property of binary nitrides (AlN, GaN and InN) has been explored theoretically. The spontaneous and piezoelectric (PZ) polarization modifies the thermal conductivity of these nitrides. The thermal conductivities as a function of temperature including and excluding the polarization mechanism (kp and k) predict a transition temperature (T p) between primary and secondary PY effects. Below T p, thermal conductivity kp is lower than k. This is due to negative thermal expansion in binary nitrides. Above T p, kp is greater than k. kp is significantly contributed by PZ polarization due to thermal expansion which is the reason of secondary PY effect. The transition temperature T p for AlN, GaN and InN has been predicted as 100 K, 70 K and 60 K, respectively. This study suggests that thermal conductivity study can reveal PY property in semiconductors.
关键词： Thermal expansion,Thermal property,Pyroelectric coefficient,III–V Binary nitride,Built-in polarization
更新于2025-09-23 15:22:29