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Vis–IR wide-spectrum photodetector at room temperature based on p-n junction-type GaAs1-xSbx/InAs core-shell nanowire
摘要： Infrared (IR) detection at room temperature is very important in many fields. Nanoscale wide-spectrum photodetectors covering IR range are still rare, although they are desired in many applications, such as in integrated optoelectronic devices. Here, we report a new kind of photodetector based on p?n heterojunction-type GaAs1-xSbx/InAs core-shell nanowires. The photodetectors demonstrate high response to the lights ranging from visible light (488 nm) to short-wavelength IR (1800 nm) at room temperature under a very low bias voltage of 0.3 V. The high performances of the devices include an ultralow dark current (32 pA at room temperature), a fast response speed (0.45 ms) to 633 nm light, high responsivity to 1310 nm telecommunication light (0.12 A/W), and high response even to 1800 nm light (on/off ratio of 2.5), etc. Besides, the devices also show excellent rectifying I-V characteristics (the current rectification ratio being ~178 in a voltage range of ± 0.3 V). These results suggest that the GaAs1-xSbx/InAs core-shell nanowires devices are promising for applications in nanoelectronic devices, optoelectronic devices and integrated optoelectronic devices.
关键词： P-N junction,IR,III-V nanowires,core-shell nanowires,Photodetector
更新于2025-09-16 10:30:52
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III–V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms
摘要： III–V nanowires have recently gained attention as a promising approach to enable monolithic integration of ultracompact lasers on silicon. However, III–V nanowires typically grow only along h111i directions, and thus, it is challenging to integrate nanowire lasers on standard silicon photonic platforms that utilize (001) silicon-on-insulator (SOI) substrates. Here, we propose III–V nanowire lasers on (001) silicon photonic platforms, which are enabled by forming one-dimensional nanowire arrays on (111) sidewalls. The one-dimensional photonic crystal laser cavity has a high Q factor >70 000 with a small footprint of (cid:2)7.2 (cid:3) 1.0 lm2, and the lasing wavelengths can be tuned to cover the entire telecom bands by adjusting the nanowire geometry. These nanowire lasers can be coupled to SOI waveguides with a coupling ef?ciency > 40% while maintaining a suf?ciently high Q factor (cid:2)18 000, which will be bene?cial for low-threshold and energy-ef?cient operations. Therefore, the proposed nanowire lasers could be a stepping stone for ultracompact lasers compatible with standard silicon photonic platforms.
关键词： monolithic integration,III–V nanowires,telecom lasers,photonic crystal laser cavity,silicon photonic platforms
更新于2025-09-12 10:27:22
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[Nanostructure Science and Technology] Nanowire Electronics || Properties Engineering of III–V Nanowires for Electronic Application
摘要： Semiconductors have been the core materials of many technological advances in recent years. Silicon, the most studied and used semiconducting material, has been the center of semiconductor industry for decades because it is available abundantly and easy to dope, and silicon dioxide is a superior dielectric material in microelectronic industry. This material can be used to make computer chips, optoelectronics devices, and solar cell. Silicon reshapes the way we live and is unarguably one of the most important materials in modern society. Through its dominant role in the semiconductor industry for now, the search for alternatives is fueled by the unstoppable demand for high-performance and low-power electronics. Among different kinds of semiconductors, III–V semiconductor holds promising properties for replacing silicon, and in particular, the NW structure of III–V semiconductor has been studied extensively.
关键词： nanowire field-effect transistor,semiconductors,contact engineering,crystal engineering,III–V nanowires,surface modification,electronic application
更新于2025-09-09 09:28:46
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[Semiconductors and Semimetals] Semiconductor Nanowires I - Growth and Theory Volume 93 || Hybrid III–V/Silicon Nanowires
摘要： The success of the semiconductor industry originates from the ability to precisely tune the electronic properties of semiconductor materials. Different approaches are used to enhance the functionality of semiconductors, such as impurity doping, alloying, heterostructuring, and straining. All these methods are based on the addition of chemical elements to a pure semiconductor. An important example is the invention of the GaAs/AlGaAs heterostructure, which has enabled the development of laser diode and high-electron-mobility transistor (HEMT). In this chapter, we will discuss the combination of two different classes of semiconductors, group IV, like Si and Ge, and group III–V, like GaAs and InP. We will focus on a relatively new materials system, i.e., nanowires (NWs), in which strain can be effectively relieved at the surface due to the small dimensions, therefore relaxing the requirements on lattice matching. This system thus offers enhanced flexibility over the conventional layered structures in combining different semiconductor materials. These new combinations may boost the performance of already widely explored device concepts, such as transistors and solar cells, but may also open new applications, such as in quantum information technology. After a discussion on the different challenges related to the combination of Si and III–V semiconductors, we will discuss the growth of III–V nanowires on group IV substrates, and then focus on the growth of heterostructures within nanowires in the radial and axial directions.
关键词： silicon,III-V nanowires,semiconductor,epitaxial growth,heterostructures
更新于2025-09-09 09:28:46