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- 摘要
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- 实验方案
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Design and Analysis of Gate Engineered Dual Material Gate Double Gate Impact Ionization Metal Oxide Semiconductor
摘要： In this exposition, we have proposed the Dual Material Gate Double Gate Impact Ionization Metal Oxide Semiconductor (DMG DG IMOS) device with a gate engineered technique of Gate Stacking which is ordinarily used in MOSFET for performance augmentation. This paper compares the performance of four DG IMOS based devices i.e. Single Material Gate Double Gate IMOS (SMG DG IMOS), SMG Gate Stacked DG IMOS (SMG GS DG IMOS), DMG DG IMOS and DMG Gate stacked DG IMOS (DMG GS DG IMOS). The performance of all the devices has been investigated using 2-D simulations. The device structures of gate stacked devices have been developed with two gate oxides namely SiO2 and HfO2 and remaining parameters have been taken alike for all four devices. The doping concentration of source and drain regions for all four devices has been taken as 1020 cm?3 and the doping concentration of the intrinsic region has been taken as 1015 cm?3. The Gate Stacked devices showed better analog outcomes as compared to the other devices. The analog parameters evaluated include transconductance (gm), total gate capacitance (Cgg) and unity gain frequency (fT). The proposed design, DMG GS DG IMOS has been then analyzed for different channel lengths and dielectrics of gate oxide materials to optimize the gate engineered design for various applications.
关键词： Impact ionization MOS (IMOS),Analog and RF parameters,Dual Material Gate Double Gate IMOS,Gate engineering and gate stack
更新于2025-09-23 15:23:52
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes
摘要： We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and Al_xGa_{1-x}As p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.
关键词： Impact Ionization,Avalanche Multiplication,Random Path Length,Staircase APDs,Bandwidth,Excess Noise Factor,Simulation
更新于2025-09-23 15:22:29
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Understanding the Average Electron-Hole-Pair Creation-Energy in Silicon and Germanium based on Full-band Monte Carlo Simulations
摘要： The thermalization process of sub-10 eV charge carriers is examined with treating carrier transport with full-band Monte Carlo simulations. The average energy loss (3.69 eV in Si and 2.62 eV in Ge) required to create a thermalized electron-hole pair, obtained from the simulations, is very close to the experimentally measured radiation-ionization energies of Si and Ge irradiated with high-energy particles. These results suggest that only interactions that occur after the radiation-generated charge carriers decay to energies of ~10 eV or less determine the fundamental property of the radiation-ionization energies. In addition to an energy loss equal to the band gap energy via impact ionization, acoustic-phonon emission, which has been omitted in prior work, contributes 30% of the remaining carrier-energy loss, while optical-phonon emission contributes the other 70%.
关键词： Single event effects,Monte Carlo,electron-hole-pair,impact ionization
更新于2025-09-23 15:21:21
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[IEEE 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Odessa, Ukraine (2018.9.4-2018.9.7)] 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Graded Band Diode for Noise Generation in Terahertz Range
摘要： The noise signal sources at subterahertz(sub- in many terahertz(THz) region are useful THz) and applications such as tomographic imaging, spectroscopy, radars and other. The GaInAs-based diodes for noise generation in the sub-THz and THz region are proposed. The diodes based on the mechanism of impact ionization in graded- gap region and static high field domain formation near cathode. Ensemble Monte Carlo technique was used for diodes analyze. The spectral noise density power is calculated for difference profiles of spatial Ga distribution in GaInAs. It is found that the spectral noise density power of the proposed diodes exceeds the one of GaAs-based diodes by at least an order of magnitude.
关键词： spectral noise density power,impact ionization,compound,static cathode domain,graded band
更新于2025-09-23 15:21:21
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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Impacts of Wind Speed and Humidity on the Performance of Photovoltaic Module
摘要： A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词： Avalanche photodiode (APD),excess noise factor,near-infrared detection,impact ionization
更新于2025-09-23 15:19:57
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Hund excitations and the efficiency of Mott solar cells
摘要： We study the dynamics of photoinduced charge carriers in semirealistic models of LaVO3 and YTiO3 polar heterostructures. It is shown that two types of impact ionization processes contribute to the carrier multiplication in these strongly correlated multiorbital systems: The first mechanism involves local spin state transitions, while the second mechanism involves the scattering of high-kinetic-energy carriers. Both processes act on the 10-fs timescale and play an important role in the harvesting of high-energy photons in solar cell applications. As a consequence, the optimal gap size for Mott solar cells is substantially smaller than for semiconductor devices.
关键词： LaVO3,Mott solar cells,impact ionization,YTiO3,carrier multiplication
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Impact of Relaxation Processes on Features of Laser Dyes
摘要： A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词： Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-23 15:19:57
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Frequency- and Power-Dependent Photoresponse of a Perovskite Photodetector Down to the Single-Photon Level
摘要： Organometallic halide perovskites attract strong interests for their high photoresponsivity and solar cell efficiency. However, there was no systematic study of their power and frequency dependent photoresponsivity. We identified two different power-dependent photoresponse types in methylammonium lead iodide perovskite (MAPbI3) photodetectors. In the first type, photoresponse remains constant from 5 Hz to 800 MHz. In the second type, absorption of a single photon can generate a persistent photoconductivity of 30 pA under an applied electric field of 2.5×104 V/cm. Additional absorbed photons, up to 8, linearly increase the persistent photoconductivity, which saturates with absorption of more than 10 photons. This is different than single photon avalanche detectors (SPADs) because the single photon response is persistent as long as the device is under bias, providing unique opportunities for novel electronic and photonic devices such as analog memories for neuromorphic computing. We propose an avalanche-like process for iodine ions and estimate that absorption of a single 0.38 aJ photon triggers motion of 108-9 ions, resulting in accumulations of ions and charged vacancies at the MAPbI3/electrode interfaces to cause band bending and change of material electric properties. We have made the first observation that single-digit photon absorption can alter the macroscopic electric and optoelectronic properties of a perovskite thin film.
关键词： Perovskite,photodetectors,impact ionization,ion migration,single photon sensitivity
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Laser-Induced Breakdown in Dielectrics: Strong Electron Superheating
摘要： Laser-induced breakdown hinders the operation of modern lasers, photonic elements and devices, and can be also employed as an important operational regime for high-intensity laser technology of new materials. In this report we generalize the two-temperature model of laser-matter interaction to simulate the regimes of laser-induced breakdown in dielectrics. This generalization allow us to associate the onset of breakdown with a sequence of the step-wise increase and decrease of the mean electron energy, (cid:2013)(cid:3032), and related evolution of the free electron density, (cid:1866)(cid:3032). The model set of the rate equations includes photo-ionization and recombination kinetics, radiation absorption, energy release and exchange effects defining the time evolution of (cid:2013)(cid:3032) to the band gap energy (cid:1831)(cid:3008), and critical energy of ionization, (cid:1831)(cid:3030)(cid:3045)(cid:124)1.5(cid:1831)(cid:3008). Additionally, our model includes an effect of a strong electron superheating, Δ(cid:2013)(cid:3032), above (cid:1831)(cid:3030)(cid:3045). Namely, in treating the onset of impact ionization by generated free electrons the related impact ionization rate, (cid:1875)(cid:3036)(cid:3040)(cid:3043) = (cid:2028)(cid:3035)(cid:2879)(cid:2869), is associated with the time of the electron heating to the critical energy, (cid:2028)(cid:3035) = (cid:1831)(cid:3030)(cid:3045)((cid:1856)(cid:2013)(cid:3032) (cid:1856)(cid:1872)? )(cid:2879)(cid:2869) ≈ 1 ((cid:2009)(cid:1835))(cid:2879)(cid:2869), where (cid:2009) = (cid:2026)(cid:3090) (cid:1831)(cid:3030)(cid:3045)? is the avalanch coefficient, (cid:2026)(cid:3090) is the related absorption cross-section of free electrons and I is the radiation intensity). However, when the neutral atoms start to deplet the impact ionization can be controlled by an additional collision time, (cid:2028)(cid:3030) = (cid:1856)(cid:3028)((cid:1865)(cid:3032) (cid:1831)(cid:3030)(cid:3045)? )(cid:3117)/(cid:3118)((cid:2869)(cid:2879)(cid:3041)(cid:3280) (cid:3041)(cid:3276)? )(cid:2870)(cid:3117)/(cid:3118) (where (cid:1856)(cid:3028) is the interatomic distance, (cid:1865)(cid:3032) is the electron mass and (cid:1866)(cid:3028) is the atomic density). That is, if (cid:1866)(cid:3032) ? (cid:1866)(cid:3028) and (cid:2028)(cid:3030) ? (cid:2028)(cid:3035) the impact ionization is controlled by (cid:2028)(cid:3035) and the ionizing impacts can occur at (cid:2013)(cid:3032) > (cid:1831)(cid:3030)(cid:3045)within the time (cid:2028)(cid:3030)(cid:124) 0.1 fs. However, when (cid:1866)(cid:3032) tends to (cid:1866)(cid:3028) by reaching the level of (cid:2013)(cid:3032) > (cid:1831)(cid:3030)(cid:3045) and seeking new neutral atoms the free electrons continue to experience the impacts with the ionized atoms and recombining electron-ion pairs. By making these interactions the free electrons can acquire an additional energy of Δ(cid:2013)(cid:3032) ≈ (cid:2028)(cid:3030) before producing the final ionizing impacts and loosing the energy of (cid:1831)(cid:3008).
关键词： electron superheating,impact ionization,two-temperature model,Laser-induced breakdown,dielectrics
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Narrow bandgap Bi <sub/>2</sub> Te <sub/>3</sub> /Sb <sub/>2</sub> Te <sub/>3</sub> thermophotovoltaic cells
摘要： A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词： Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-16 10:30:52