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Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy
摘要： High-performance, full-swing inverters implemented with InGaZnO thin-film transistors (TFTs) have been demonstrated capable of operating at a very low voltage. The threshold voltage of the load and drive TFTs were modified through careful change of the gate dielectric anodization voltage. Both the load and drive TFTs show excellent electrical properties including a current on/off ratio > 106 and a subthreshold swing close to the theoretical limit. As a result, the inverters show high voltage gains up to 34 at a supply voltage of only 1 V as well as high noise margins > 92% of the theoretical maximum. The devices and the fabrication process might have potential applications in future wearable and disposable electronics where low cost and low power are vital.
关键词： InGaZnO,one-volt operation,high voltage gain and noise margins,full-swing inverters
更新于2025-11-14 17:28:48
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P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs
摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.
关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width
更新于2025-09-23 15:23:52
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Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
摘要： The light-illumination stability of amorphous InGaZnO Thin Film Transistors (a-IGZO TFTs) in oxygen and moisture ambience was in-depth characterized by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. With the illuminated light wavelength decreasing, both I-V and C-V curves shifted negatively. When the ambient oxygen content or moisture level increased, the a-IGZO TFTs exhibited more stable properties under light illumination. A qualitative model was proposed to explain the related physical mechanism. The higher oxygen content or moisture level bene?ted the light-illumination-induced oxygen adsorption at back channels of a-IGZO TFTs and prevented the formation of oxygen vacancies (VO) in channel layers; the VO variation with the light illumination became more di?cult and hence led to better light-illumination stability of the corresponding TFT devices.
关键词： Thin ?lm transistor,Light-illumination stability,Amorphous InGaZnO,Ambient gases
更新于2025-09-23 15:23:52
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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X-ray Photoelectron Spectroscopy Analysis of the Effect of Photoresist Passivation on InGaZnO Thin-film Transistors
摘要： Bottom-gate InGaZnO (IGZO) thin-film transistors (TFTs) with EOC photoresist (PR) passivation were fabricated. Compared to the unpassivated IGZO TFT with a mobility of 6.71 cm2V-1s-1, a hysteresis of 2.42 V and a poor bias stress stability, the PR-passivated IGZO TFT showed good electrical characteristics with a higher mobility of 8.85 cm2V-1s-1, a lower hysteresis of 0.06 V and a more reliable stability (△Vth = 0.36 V) under positive gate bias stress (PBS). The effect of PR passivation on the performance of IGZO-TFT was investigated by x-ray photoelectron spectroscopy (XPS), systemically. The result of XPS spectra of the O 1s core levels indicate that PR passivation effectively suppressed the adsorption/desorption effect on IGZO surface, resulting in fewer unstable states and higher electrical stability. Furthermore, XPS depth profile experiments show that the proportion of elements on the film surface changed and the IGZO surface was In-rich after PR passivation, enhancing the mobility. The PR passivation with low temperature (100 oC) process exhibited good dielectric quality and excellent barrier ability against water and oxygen molecules. Therefore, it may be a good candidate for high-mobility and high-stability flexible TFTs in future.
关键词： XPS,InGaZnO,Photoresist,Thin film transistors,Adsorption/desorption
更新于2025-09-23 15:21:21
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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
摘要： Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).
关键词： thin-film transistor (TFT),positive gate bias stress (PGBS),passivation layer,characteristic length,amorphous InGaZnO (a-IGZO)
更新于2025-09-23 15:21:21
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Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
摘要： Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.
关键词： field-effect transistor (FET),inverter,WSe2,InGaZnO (IGZO),heterojunction PN diode,AC rectifier
更新于2025-09-23 15:19:57
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High-Performance Transparent Ultraviolet Photodetectors Based on InGaZnO Superlattice Nanowire Arrays
摘要： Due to the efficient photocarrier separation and collection coming from their distinctive band structures, superlattice nanowires (NWs) have great potential as active materials for high-performance optoelectronic devices. In this work, InGaZnO NWs with superlattice structure and controllable stoichiometry are obtained by ambient-pressure chemical vapor deposition (CVD). Along the NW axial direction, perfect alternately stacking of InGaO(ZnO)4+ blocks and InO2- layers is observed to form a periodic layered structure. Strikingly, when configured into individual NW photodetectors, the Ga concentration is found to significantly influence the amount of oxygen vacancy and oxygen molecules adsorbed on the NW surface, which dictate the photoconducting properties of the NW channels. Based the optimized Ga concentration (i.e. In1.8Ga1.8Zn2.4O7), the individual NW device exhibits an excellent responsivity of 1.95×105 A/W and external quantum efficiency of as high as 9.28×107 % together with a rise time of 0.93 s and a decay time of 0.2 s for the ultraviolet (UV) photodetection. Besides, the obtained NWs can be fabricated into large-scale parallel arrays on glass substrates as well to achieve the fully-transparent UV photodetectors, where the performance is on the same level or even better than many transparent photodetectors with high performance. All the results discussed above demonstrate the great potential of InGaZnO superlattice NWs for next-generation advanced optoelectronic devices.
关键词： superlattice,InGaZnO,nanowires,transparent,ultraviolet photodetectors
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2019.11.14-2019.11.15)] 2019 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - High reliability InGaZnO TFT by inductively coupled plasma sputtering system
摘要： The reliability of oxide semiconductor TFT and the method to lower the process temperature have become serious problems. In order to solve these problems, we have developed inductively coupled plasma sputtering equipment that can control the Radio Frequency (RF) power to generate Inductively Coupled Plasma (ICP) and the voltage applied to the sputtering target independently. Using this equipment, we can deposit high-density oxide semiconductor films at room temperature and fabricate highly reliable TFTs with them.
关键词： thin-film transistor(TFT),inductively coupled plasma (ICP) sputtering,InGaZnO (IGZO),reliability
更新于2025-09-16 10:30:52
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P-6.1: Asymmetric Effects of Gate-Bias Stress Voltage on the Stability under Positive and Negative Gate-Bias Stress of a-IGZO TFTs
摘要： The asymmetric effects of gate-bias stress voltage on the stability under positive gate-bias stress (PBS) and negative gate-bias stress (NBS) of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) are investigated. It is observed that under PBS, the threshold voltage shift (?Vth) increases with the increased value of the gate-bias stress voltage (VStress), which is due to the enhanced electron trapping at/near the interface of the channel and the gate insulator. However, under NBS, the ?Vth is nearly unaffected by the Vstress. As the NBS-induced negative ?Vth is resulted from electron-detrapping from the donor-like states related to oxygen vacancies, it is supposed that the rate of electron-detrapping is not sensitive to the negative gate-bias voltage. The influence of N2O plasma back-channel treatment is also studied. The stability under NBS is effectively improved after the N2O plasma treatment, which originates from the decreased density of oxygen-vacancy related donor-like states within the a-IGZO channel layer.
关键词： thin-film transistors,N2O plasma treatment.,amorphous InGaZnO,gate-bias stress,stability
更新于2025-09-10 09:29:36