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Zinc ions modified InP quantum dots for enhanced photocatalytic hydrogen evolution from hydrogen sulfide
摘要： Through direct addition of inorganic zinc ions into the solution of indium phosphide quantum dots (InP QDs) at ambient environment, we here present a facile but effective method to modify InP QDs for photocatalytic hydrogen evolution from hydrogen sulfide (H2S). X-ray diffraction patterns and transmission electron microscopic images demonstrate that zinc ions have no significant influence on the crystal structure and morphology of InP QDs, while X-ray photoemission spectra and UV–Vis diffuse and reflectance spectra indicate that zinc ions mainly adsorbed on the surface of InP QDs. Photocatalytic results show the average hydrogen evolution rate has been enhanced to 2.9 times after modification and H2S has indeed involves in the hydrogen evolution process. Steady-state and transient photoluminescence spectra prove that zinc ions could effectively eliminate the surface traps on InP QDs, which is crucial to suppress the recombination of charge carriers. In addition, the electrostatic interaction between zinc ions and the surface sulfide from InP QDs could mitigate the repulsion between QDs and sulfide/hydrosulfide, which may promote the surface oxidative reaction during photocatalysis. This work avoids the traditional harsh and complicated operations required for surface passivation of QDs, which offers a convenient way for optimization of QDs in photocatalysis.
关键词： Hydrogen sulfide,Photocatalytic hydrogen evolution,InP quantum dots,Surface modification
更新于2025-10-22 19:38:57
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Surface-interface analysis of In <sub/>x</sub> Ga <sub/>1-x</sub> As/InP heterostructure in positive and negative mismatch system
摘要： The change of In content in the InxGa1-xAs/InP system leads to the variation of the lattice constant and thereby to the negative mismatch between the base InP and the positive mismatch. Here, we studied the surface morphology and dislocation relationship of InxGa1-xAs/InP (100) in the positive and negative mismatch system by different characterization techniques. Under the same mismatch, the surface morphology and mass effect of negative mismatch were greater than those of positive mismatch. The reason was that in the negative mismatch system, during the film growth, the disorder degree at the interface increases, leading to an increase in dislocation density, meanwhile, the dislocation in the substrate more easily moved into the film, thus increasing the film and the dislocation density in it. Moreover, the mechanism of the buffer layer was also clarified. The addition of the buffer layer first limited the dislocation movement in the substrate, and secondly reduced the mismatch between the epitaxial layer and the substrate, thereby reducing mismatch dislocation.
关键词： surface/interface,lattice mismatch,InxGa1-xAs/InP,residual stress,dislocation
更新于2025-09-23 15:23:52
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Localized Deformation and Fracture Behaviors in InP Single Crystals by Indentation
摘要： The indentation-induced deformation mechanisms in InP(100) single crystals were investigated by using nanoindentation and cross-sectional transmission electron microscopy (XTEM) techniques. The results indicated that there were multiple “pop-in” events randomly distributed in the loading curves, which were conceived to arise primarily from the dislocation nucleation and propagation activities. An energetic estimation on the number of nanoindentation-induced dislocations associated with pop-in effects is discussed. Furthermore, the fracture patterns were performed by Vickers indentation. The fracture toughness and the fracture energy of InP(100) single crystals were calculated to be around 1.2 MPa·m1/2 and 14.1 J/m2, respectively.
关键词： InP(100) single crystal,nanoindentation,fracture toughness,transmission electron microscopy,Pop-in
更新于2025-09-23 15:23:52
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Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires
摘要： InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite or zincblende crystal phase and their photoluminescence (PL) properties were investigated at low temperature (≈6K) for different measurement geometries. PL emissions from the NWs were carefully studied in a wide energy range from 0.7 eV to 1.6 eV. The different features observed in the PL spectra for increasing energies are attributed to four distinct emitting domains of these nano-heterostructures: the InAs island (axially grown), the thin InAs capping shell (radially grown), the crystal-phase quantum disks arising from the coexistence of InP zincblende and wurtzite segments in the same NW, and the InP portions of the NW. These results provide a useful frame for the rational implementation of InP-InAs-InP multi-shell NWs containing various quantum confined domains as polychromatic optically active components in nanodevices for quantum information and communication technologies.
关键词： photoluminescence,multi-shell nanowire,InP-InAs-InP heterostructure
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology
摘要： We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by common-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm ╳0.9 mm.
关键词： thin-film microstrip (TFM),Indium phosphide (InP),H-band,Amplifier,Heterojunction bipolar transistors (HBTs),Terahertz monolithic integrated circuit (TMIC)
更新于2025-09-23 15:22:29
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Scalable Compact Modeling of III-V DHBTs: Prospective Figures of Merit Toward Terahertz Operation
摘要： We investigate the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. Prediction of future III–V HBT technologies figures-of-merit is performed by using the generated scalable model card.
关键词： InGaAs/InP DHBTs,heterojunction bipolar transistors,Compact model,GaAsSb/InP DHBTs
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Valparaiso, Chile (2019.11.13-2019.11.27)] 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Fourier-Bessel Shapes in Output Photocurrents and Frequency Chirping Effects from Laser Fields
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0 .5 8 In0 .4 2 P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of Gax In1 ?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in Gax In1 ?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI , samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-23 15:21:01
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Effect of indium alloying on the charge carrier dynamics of thick-shell InP/ZnSe quantum dots
摘要： Thick-shell InP/ZnSe III–V/II–VI quantum dots (QDs) were synthesized with two distinct interfaces between the InP core and ZnSe shell: alloy and core/shell. Despite sharing similar optical properties in the spectral domain, these two QD systems have differing amounts of indium incorporation in the shell as determined by high-resolution energy-dispersive x-ray spectroscopy scanning transmission electron microscopy. Ultrafast fluorescence upconversion spectroscopy was used to probe the charge carrier dynamics of these two systems and shows substantial charge carrier trapping in both systems that prevents radiative recombination and reduces the photoluminescence quantum yield. The alloy and core/shell QDs show slight differences in the extent of charge carrier localization with more extensive trapping observed in the alloy nanocrystals. Despite the ability to grow a thick shell, structural defects caused by III–V/II–VI charge carrier imbalances still need to be mitigated to further improve InP QDs.
关键词： indium alloying,InP/ZnSe,charge carrier dynamics,photoluminescence quantum yield,quantum dots
更新于2025-09-23 15:21:01
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Continuous-wave operation of a 1.3 <i>??</i> m wavelength npn AlGaInAs/InP transistor laser up to 90 ?°C
摘要： A transistor laser (TL) is a device that operates at a high-speed with multiple functions such as output control with low wavelength shift and signal mixing. By adopting a high heat dissipation structure with a high-speed compatible wide electrode pad and thick Au plating in TLs, improvement of temperature performance in 1.3 μm wavelength npn AlGaInAs/InP TL was demonstrated. As a result, continuous-wave operation of a 1.3 μm TL up to 90 °C was achieved. The thermal resistance was estimated to be 25 K W?1, based on the spectrum behavior, which is at least four times lower than the previously observed value.
关键词： transistor laser,AlGaInAs/InP,continuous-wave operation,thermal resistance,high heat dissipation structure
更新于2025-09-23 15:21:01
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Excitonic complexes in InAs/InP nanowire quantum dots
摘要： InAs quantum dots embedded in InP nanowires form an important platform for basic research studies, as well as for quantum dot applications. Notably, understanding of nanowire quantum dot spectral properties is essential in both cases. Therefore, in this work we use atomistic theory to study spectra of the single exciton (X ), the biexciton (X X ), the triexciton (X X X ), and the positively and negatively charged trions (X + and X ?) con?ned in these nanostructures. We focus on the role of vertical and lateral con?nement, therefore, we systematically study a large family of quantum dots with different heights and diameters, and ?nd the important role of correlations due to presence of higher states. We ?nd that the order of excitonic binding energies is a characteristic feature of InAs/InP nanowire quantum dots being (ordered from negative to positive values): X ?, X X , and X +, with strongly bound X ?, rather weakly bound X X , and typically unbound X +. Next, we determine the key role of alloy randomness due to intermixing, which turns out to especially important for larger quantum dot heights and phosphorous contents over 40%. In selected cases, the alloying can lead to an unbound biexciton, and can even reverse ordering of excitonic lines.
关键词： InAs/InP nanowire quantum dots,atomistic theory,binding energies,alloy randomness,excitonic complexes
更新于2025-09-23 15:21:01