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Effect of HCl Cleaning on InSb-Al<sub>2</sub>O<sub>3</sub> MOS Capacitors
摘要： In this work, the role of HCl treatments on InSb surfaces and InSb-Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy (XPS) measurements indicate that HCl diluted in and rinsed with isopropanol (IPA) results in a surface layer of InCl3 which is not present for similar HCl-water processes. Furthermore, this InCl3 layer desorbs from the surface between 200°C and 250°C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using atomic layer deposition (ALD) of Al2O3 at 200°C and 250°C and the presence of InCl3 was associated with a +0.79 V flatband voltage shift. The desorption of the InCl3 layer at 250°C reversed this shift but the increased process temperature resulted in increased interface-trapped charge (Dit) and hysteresis voltage (VH). This shift in flatband voltage, which does not affect other figures of merit, offers a promising route to manipulate the threshold voltage of MOS transistors, allowing enhancement-mode and depletion-mode devices to be fabricated in parallel.
关键词： surface cleaning,III-V,ALD,Al2O3,InSb,dielectric interface,MOSCAP,HCl
更新于2025-11-14 17:28:48
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Influence of pulse frequency on physicochemical properties of InSb films obtained via electrodeposition
摘要： Presented work focuses on the tremendous and often skipped role of pulse frequency on the structural, optical and electrical properties of electrodeposited InSb films. Tailoring the pulse frequency during electrodeposition allows to obtain stoichiometric, nanocrystalline, smooth films with relatively high electrical conductivity or Sb-rich, almost insulating, ultra smooth ones. It was observed that a double coherent domain size reduction (via decrease of pulse frequency) leads to a six fold increase in resistivity of the film. Further increasing pulse on time results in increasing resistivity of the material up to ca. 540 U cm. Based on the FTIR and SPV measurements it was confirmed that obtained materials are characterized by small band gap and p-type conductivity. Moreover, stoichiometric, ultra smooth InSb films obtained with 10 ms pulse on time have high photovoltage amplitude and charging time constant with relatively high conductivity, which makes them a good, low-cost candidate for optoelectronic devices.
关键词： Pulse frequency,Electrodeposition,InSb,p-type semiconductor
更新于2025-11-14 15:19:41
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Design of a six-band terahertz metamaterial absorber for temperature sensing application
摘要： We present a simple design of a six-band terahertz metamaterial absorber (MMA). The unit-cell of the MMA consists of a metallic cross-cave-patch (CCP) structure and an InSb dielectric spacing layer stands on a ground-plane. The permittivity of the InSb dielectric layer can be adjusted efficiently by the variation of external temperature. The numerical simulation results show that the MMA has six distinct absorption peaks from 0.4 THz to 2.2 THz, and the absorption peak frequencies can be tuned easily by changing the external temperature. The surface current distributions of the top layer and back layer of the unit-cell structure are studied to better understand the physical mechanism of the proposed MMA. The six-band strong absorption of the MMA is originated from the excitations of high-order magnetic resonance. In addition, the sensitivity S is investigated to explore temperature sensing performance of the device, and the value of S is 10.3 GHz/K, 8.1 GHz/K, 6.7 GHz/K, 6.4 GHz/K, 5.5 GHz/K and 5.4 GHz/K, respectively. The design of the MMA could find potential applications in temperature sensing or other optoelectronic related areas in terahertz region.
关键词： InSb,Terahertz metamaterial absorber,Temperature sensing,Six-band
更新于2025-09-23 15:22:29
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Supercurrent and Multiple Andreev Reflections in InSb Nanosheet SNS Junctions
摘要： In this study, the realization of mesoscopic Josephson junctions based on free-standing InSb nanosheet grown by molecular-beam epitaxy is reported. Below the critical temperature of superconducting aluminium electrodes ((cid:1)1.1 K), the high transparency of the contacts gives rise to proximity-induced superconductivity. A dissipationless supercurrent which can be modulated by a gate voltage acting on the electron density in the nanosheet flows through the superconducting weak links. At finite bias voltage, subharmonic energy-gap structures (SGS) originating from multiple Andreev reflections (MARs) are observed, indicating a highly transparent InSb nanosheet–superconductor interface. At last, a superconducting hybrid device with niobium electrodes is shown, suitable for further higher temperature and magnetic field transport measurements.
关键词： supercurrent,InSb nanosheets,Josephson junctions,multiple Andreev reflections
更新于2025-09-23 15:22:29
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Berry phase in strained InSb whiskers
摘要： Strain influence on the longitudinal magnetoresistance for the n-type conductivity InSb whiskers doped by Sn to concentrations 6·1016–6·1017 сm–3 were studied at temperatures from 4.2 to 50 K and magnetic field up to 10 T. The Shubnikov–de Haas oscillations at low temperatures were revealed in the strained and unstrained samples with all range doping concentration. Some peaks of the longitudinal magnetoresistance split as a doublet in the InSb whiskers with doping concentration in the vicinity to metal-insulator transition. Taking into account peak splitting giant g-factor from 30 to 60 was defined for strained and unstrained samples. The magnetoresistance oscillation period of the InSb whiskers doesn’t differ under strain for all doping concentration, but Fermi energy increases and electron effective mass mс decreases and consists 0.02 m0. Berry phase presence was also revealed in strained n-InSb whiskers that shows their transition under a strain to topological insulator phase.
关键词： Berry phase,topological insulator,strained InSb whiskers,Shubnikov–de Haas oscillations,magnetoresistance
更新于2025-09-23 15:21:21
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Role of Thermal Equilibrium Dynamics in Atomic Motion during Nonthermal Laser-Induced Melting
摘要： This study shows that initial atomic velocities as given by thermodynamics play an important role in the dynamics of phase transitions. We tracked the atomic motion during nonthermal laser-induced melting of InSb at different initial temperatures. The ultrafast atomic motion following bond breaking can in general be governed by two mechanisms: the random velocity of each atom at the time of bond breaking (inertial model), and the forces acting on the atoms after bond breaking. The melting dynamics was found to follow the inertial model over a wide temperature range.
关键词： atomic motion,nonthermal laser-induced melting,inertial model,InSb,thermal equilibrium dynamics
更新于2025-09-23 15:21:01
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AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy
摘要： A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.
关键词： nBn detector,molecular-beam epitaxy,dark current,InSb,IR photodetector
更新于2025-09-23 15:21:01
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Temperature Tunable Narrow-Band Terahertz Metasurface Absorber Based on InSb Micro-Cylinder Arrays for Enhanced Sensing Application
摘要： A narrow-band metasurface absorber (MSA) based on InSb micro-cylinder arrays has been proposed and investigated numerically, which could be believed to be applicable for both temperature and refractive index (RI) sensing in terahertz (THz) region. Distinct from previous designs, the proposed narrow-band MSA is only consisted of a sub-wavelength periodic micro-cylinder array based on the InSb material possessing an extremely thermosensitive relative permittivity which varies with the external environment temperature, and a gold ground-plane deposited on a glass substrate. Numerical simulation results indicate that the proposed MSA can achieve an absorbance of 99.9% at 1.8985 THz and the corresponding Q-factor is about 120.9 at room temperature (300 K). It is inferred that the narrow-band perfect absorption of the MSA could be contributed to the surface plasmon polariton (SPP) resonance mode excitation. Furthermore, the absorption property of the designed MSA is found to be highly sensitive to the RI value variations of the surrounding mediums and fluctuations of external environment temperature. Thus, the proposed MSA can be not only operated as a temperature sensor with a sensitivity of 2.13 GHz/K, but also a RI sensor with a sensitivity of 960 GHz/RIU (refractive index unit). Due to its high sensing performance, it can be believed that the narrow-band MSA has great potential applications in chemical, biological or other optoelectronic related areas.
关键词： terahertz region,Metasurface absorber,sensing,InSb,narrow-band
更新于2025-09-23 15:21:01
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Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells
摘要： The effect of co-sensitization of CdS and InSb Quantum Dots (QDs) on the enhancement of efficiency of Quantum Dots Sensitized Solar Cells (QDSSCs) has been investigated. InSb is synthesized by a facile solvothermal method using indium metal particles and antimony trichloride as precursors. From TEM images the average particle size of InSb was found to be less than 25 nm. The I–V data showed photoconversion efficiency (PCE) of 0.8% using InSb QDs as a sensitizer layer for QDSSC. However, co-sensitization of InSb QDs and CdS QDs on the TiO2 photoanode in QDSSCs showed an enhanced PCE of 4.94% compared to that of CdS sensitized solar cells (3.52%). The InSb QD layer broadens the light absorption range with reduced spectral overlap causing an improvement in light harvesting along with suppression of surface defects which reduced the recombination losses. As a result, co-sensitized TiO2/CdS/InSb QDSSC exhibits a greatly improved PCE of 4.94%, which is 40% higher than that of TiO2/CdS (3.52%) based QDSSCs due to improved light absorption with low recombination losses.
关键词： quantum dot sensitized solar cells,co-sensitization,photoconversion efficiency,CdS,InSb quantum dots
更新于2025-09-23 15:19:57
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Electrical control of a spin qubit in InSb nanowire quantum dots: Strongly suppressed spin relaxation in high magnetic field
摘要： In this paper we investigate the impact of gating potential and magnetic ?eld on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong g factor and high magnetic ?eld strength lead to the prevailing in?uence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak g factor, like GaAs or Si/SiGe. In this regime we ?nd that spin relaxation between qubit states is signi?cantly suppressed due to the con?nement perpendicular to the nanowire axis. We also ?nd that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requres single quantum dot gating potential.
关键词： spin qubit,spin relaxation,Rabi frequency,InSb nanowire,quantum dots
更新于2025-09-23 15:19:57