Electrical control of a spin qubit in InSb nanowire quantum dots: Strongly suppressed spin relaxation in high magnetic field

摘要： In this paper we investigate the impact of gating potential and magnetic ?eld on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong g factor and high magnetic ?eld strength lead to the prevailing in?uence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak g factor, like GaAs or Si/SiGe. In this regime we ?nd that spin relaxation between qubit states is signi?cantly suppressed due to the con?nement perpendicular to the nanowire axis. We also ?nd that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requres single quantum dot gating potential.