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Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
摘要： Indium oxide (IO) and indium tin oxide (ITO) are widely used in optoelectronics applications as a high quality transparent conducting oxide layer. A potential application of these coatings is for enhancing the electrical properties of spacecraft thermal radiator coatings, where dissipating built-up static charge is crucial. In this work, the authors investigated the thickness-dependent electrical and optical properties of IO thin films synthesized by atomic layer deposition (ALD) with the aim of finding the optimum condition for coating radiator pigments. Trimethylindium and ozone were used as precursors for IO, while a tetrakis(dimethylamino)tin(IV) source was used for Sn doping to produce ITO. As-deposited IO films prepared at 140 °C resulted in a growth per cycle of ~0.46 ?/cycle and film resistivity as low as 1.4 × 10^{-3} Ω cm. For the case of ITO thin films, an ALD process supercycle consisting of 1 Sn + 19 In cycles is shown to provide the optimum level of Sn doping corresponding to 10 wt. % widely reported in the literature.
关键词： atomic layer deposition,indium oxide,optoelectronics,transparent conducting oxides,thin films,indium tin oxide
更新于2025-09-23 15:23:52
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Structural and electrical properties of copper doped In<sub>2</sub>O<sub>3</sub> nanostructures prepared by citrate gel processes
摘要： Copper doped indium oxide (In2?xCuxO3) nanostructures were prepared by a simple citrate gel process using indium nitrate and copper nitrate as precursors. The influence of the dopant concentration (x = 0, 0.03, 0.05 and 0.07) on the structural, morphological and the electrical properties of indium oxide was studied. The crystallite size and the surface roughness (root mean square roughness and the mean roughness) of the prepared samples increased as a function of the dopant concentration. However, the copper (Cu) concentration did not affect the basic host crystal structure. The prepared samples showed an n-type semiconducting behavior and a variation in the electrical parameters, which might be due to the confinement of the electronic states of the dopants to small volumes (less than 100 nm). Implication of the degenerate electron gas model to the experimental electrical data revealed the role of the different scattering centers in conduction electron scattering.
关键词： Indium oxide,Mean free path,Electron gas model,Citrate gel route
更新于2025-09-23 15:23:52
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Performance study of surface plasmon resonance and lossy mode resonance based fiber optic sensors utilizing silver and indium oxide layers: An experimental investigation
摘要： This study presents here the experimental investigations on a surface plasmon resonance (SPR)/lossy mode resonance (LMR) based fiber optic sensors coated with silver and indium oxide layers. Different sensing probes have been fabricated by coating (i) a single layer of indium oxide, (ii) a single layer of silver and (iii) a double layer of indium oxide and silver (with different thicknesses) symmetrically onto to the bare core of silica fiber. The sensitivity of these fiber optic sensing probes towards surrounding region refractive index variations are determined using different concentrations of sucrose solutions. It was found that sensor probe fabricated with coating of 100 nm thickness of indium oxide was two times more sensitive than the conventionally used fiber optic sensing probe coated with only silver layer. The sensitivity of a double layer coated fiber optic sensor with various thicknesses of indium oxide and silver layers is in between the two extremes of the sensitivities. This study will find suitable applications in the field of chemical and biochemical sensing. The drawbacks of silver coatings and the advantages of LMR supporting indium oxide have also been discussed.
关键词： Surface plasmons,Sensitivity,Lossy mode resonances,Thin films,Fiber optic sensors,Detection accuracy,Indium oxide
更新于2025-09-23 15:21:21
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Si-doping effect on solution-processed In-O thin-film transistors
摘要： In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3-SiO2 binary oxide structure up to 15 at.%, the thicknesses, densities, and crystallinity of the resulting In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction techniques, while the produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis revealed that the increase in the content of Si dopant increased the thickness of the produced film and reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a reduction in the absolute value of threshold voltage VT close to 0 V and low current in the off-state, as compared to those of the non-doped indium oxide films, due to the reduced number of oxygen defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The ISO TFT with a Si content of 3 at.% annealed at 400 °C demonstrated the smallest subthreshold swing of 0.5 V/dec, VT of ?5 V, mobility of 0.21 cm2/Vs, and on/off current ratio of about 2×107.
关键词： silicon-doped indium oxide,solution processing,amorphous oxide semiconductor,thin-film transistor,spin coating
更新于2025-09-23 15:21:01
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Fabrication cobalt-doped indium oxide/molybdenum disulfide ternary nanocomposite toward carbon monoxide gas sensing
摘要： This paper demonstrated a high-performance carbon monoxide (CO) gas sensor based on cobalt (Co)-doped indium oxide (In2O3) nanoparticles/molybdenum disulfide (MoS2) nanoflowers nanocomposite. Co-In2O3 nanoparticles were synthesized by a co-precipitation method, and flower-like MoS2 was prepared by one-step hydrothermal route. Layer-by-layer self-assembly technique was employed to fabricate Co-In2O3/MoS2 film sensor on an epoxy substrate with interdigital electrodes. Scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were carried out to fully examine the morphology, microstructure, and elementary composition of the as-prepared samples. The CO-sensing characteristics of the Co-In2O3/MoS2 film sensor were systematically investigated under room temperature through exposing the sensor to various concentration of CO gas. The Co-In2O3/MoS2 sensor achieved high sensitivity, fast response/recovery speed, excellent repeatability and stable long-term stability. An approach of combining gas-sensing experiments with density-functional theory (DFT) simulation based on first-principle was used to further explore the CO-sensing mechanism of the Co-In2O3/MoS2 sensor. The Co2+ ion doping, and heterojunctions created at interfaces of Co-In2O3 and MoS2 were attributed to the high-performance CO sensing.
关键词： CO gas sensor,LbL self-assembly,molybdenum disulfide,first-principle theory,Co-doped indium oxide
更新于2025-09-23 15:21:01
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Peculiarities of using nanomaterials based on SiO <sub/>2</sub> -SnO <sub/>2-</sub> In <sub/>2</sub> O <sub/>3</sub> as sensitive elements of vacuum sensors
摘要： Experimental data on the use of nanomaterials based on SiO2-SnO2-In2O3 as sensitive elements of vacuum sensors are presented. It is shown that the sensory response of a three-component system under consideration is determined by the mass fraction of indium oxide. It was determined that depending on the content of In2O3 the nanomaterials under study can be characterized by a decrease and an increase in resistance when the pressure is reduced lower than atmospheric one. The mechanisms that potentially correspond to the observed phenomenon are considered.
关键词： nanomaterials,indium oxide,SiO2-SnO2-In2O3,vacuum sensors,sensitive elements
更新于2025-09-23 15:21:01
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Continuous and Ultrafast Preparation of In(OH) <sub/>3</sub> , InOOH, and In <sub/>2</sub> O <sub/>3</sub> Series in a Microreactor for Gas Sensors
摘要： In(OH)3 and InOOH were synthesized in a high-temperature continuous flow microreactor, which was much faster than the hydrothermal synthesis in the Teflon-lined autoclave. The phase transition interval of In(OH)3 and InOOH is measured and the effect of aging temperatures on equilibrium compositions was also theoretically calculated. A transformation from nanorods to nanocubes was observed when the aging temperatures increased. In(OH)3 and InOOH were also synthesized with Sn dopant, which was proved to be beneficial for the transformation from In(OH)3 to InOOH. The sensors based on cubic and hexagonal In2O3 particles showed a fast response (4~5 s) and recovery (12~15 s) speed to acetone vapor at the optimum operating temperature of 290 oC. The sensor based on hexagonal In2O3 showed a higher response than that based on cubic In2O3. This work provided a rapid, continuous and high-temperature synthesis method of an In(OH)3, InOOH and In2O3 series.
关键词： Indium hydroxide (In(OH)3),Tin dopant,Indium oxide(In2O3),Indium oxyhydroxide (InOOH),Gas sensors
更新于2025-09-19 17:15:36
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Low pressure chemical vapor deposition of In <sub/>2</sub> O <sub/>3</sub> films on off-axis c-sapphire substrates
摘要： Heteroepitaxial In2O3 films were grown on transparent c-sapphire substrates with 0°, 3.5°, 6° and 8° off-axis angles via low pressure chemical vapor deposition (LPCVD). Metallic solid indium and oxygen gas were used as the precursors. X-ray diffraction (XRD) spectroscopy and cross-sectional scanning transmission electron microscopy (STEM) were used to study the effects of substrate off-axis on the crystalline quality of the as-grown films. The XRD 2θ-ω spectra confirmed the growth of body centered cubic bixbyite In2O3 films with (111) out-of-plane orientation. STEM images revealed the suppressed dislocation density in the films grown on substrates with off-axis angles. The crystal structure was further confirmed by Raman spectroscopy. Fifteen peaks corresponding to bcc-In2O3 Raman modes were observed at room temperature (RT). XRD ω-rocking curves, XRD Φ-scan profiles and STEM images indicate improved crystalline quality in films grown on substrates with, particularly, 3.5° and 6° off-cut angles. Growth rates in a wide range of ~ 0.5 - 30 μm/hr were achieved. RT photoluminescence peak at ~2.15 eV is attributed to the deep level defect transitions. RT photoluminescence excitation peak at ~3.38 eV corresponds to the optical bandgap of bcc-In2O3. RT electron Hall mobilities of ~ 88 - 116 cm2/V.s were measured with background carrier concentrations of ~ 6 - 9x1017 cm-3.
关键词： low pressure chemical vapor deposition,Indium oxide,off-axis substrate,c-sapphire
更新于2025-09-19 17:15:36
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Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells
摘要： We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.
关键词： perovskite solar cell,electron transport layer,electrical property,tin-indium-oxide,band structure,room temperature
更新于2025-09-16 10:30:52
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A novel quartz-crystal microbalance humidity sensor based on solution-processible indium oxide quantum dots
摘要： Having a large surface area, like the quantum con?nement e?ect also caused by the nano-level size of quantum dots (QDs), creates fantastic potential for humidity sensing. A high concentration of surface adsorption sites initiates an increased response. Porosity between QDs allows fast water vapor penetration and out?ow. Here, a quartz-crystal microbalance (QCM) humidity sensor was prepared using indium oxide (In2O3) QDs, synthesized via a solvothermal method. After the In2O3 QDs were directly spin-coated onto the QCM, an annealing process removed organic long chains and exposed more moisture adsorption sites on the surfaces of the QDs. The annealed QCM humidity sensor exhibited high sensitivity (56.3 Hz per %RH at 86.3% RH), with a fast response/recovery time (14 s/16 s). Long carbon chains were broken down, and hydrogen-bonded hydroxyl groups were chemisorbed to the QDs. The chemical reaction was reduced by these chemisorbed hydrogen-bonded hydroxyl groups. Mass change was mostly caused by fast multilayer physisorption. Thus, the transducer can e?ectively and precisely monitor the moisture from a person's breath. In2O3 QD-modi?ed QCM sensors demonstrate promising humidity-sensing applications in daily life.
关键词： indium oxide quantum dots,annealing process,solvothermal method,humidity sensor,quartz-crystal microbalance
更新于2025-09-16 10:30:52