- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Via-Less Microstrip to Rectangular Waveguide Transition on InP
摘要： Indium-Phosphide (InP) is one of the most common materials used for realizing active devices working in the millimeter frequency range. The isotropic etching profile of InP substrates limits the realization of passive devices, thus requiring an expensive and lossy hybrid platform. This paper presents a via-less, cost-effective and efficient solution for InP substrate. By using the proposed planar solution, it is demonstrated that rectangular waveguides can be realized on InP by fabricating a bed of nails structure which acts as a reflecting boundary for an impinging millimeter wave. As a proof of concept, a transition from microstrip to rectangular waveguide structure is realized within H-band (220-320 GHz) with a return loss of -18dB over a bandwidth of 30 GHz.
关键词： via-less,microstrip,millimeter wave,bed of nails,rectangular waveguide,Indium-Phosphide (InP)
更新于2025-09-16 10:30:52
-
Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage
摘要： Spectral redistribution of the intensity of short- and long-wavelength emission components within gain bandwidth of a 7- to 8-μ m quantum-cascade laser under the action of control voltage is demonstrated. As the voltage was increased from 10.5 to 18.2 V, the wavelength of maximum laser emission intensity shifted by approximately 200 nm. The maximum bandwidth of laser gain was about 300 nm (at a temperature of 80 K). The quantum-cascade laser heterostructure was grown by molecular beam epitaxy. The laser active region design was based on double-phonon depopulation of the lower level as implemented on In0.53Ga0.47As/In0.52Al0.48As heteropair of solid alloys lattice-matched with an InP substrate.
关键词： indium phosphide,quantum-cascade lasers,superlattices,epitaxy
更新于2025-09-16 10:30:52
-
<p>InP/ZnS Quantum Dots Cause Inflammatory Response in Macrophages Through Endoplasmic Reticulum Stress and Oxidative stress</p>
摘要： Quantum dots (QDs) are widely used semiconductor nanomaterials. Indium phosphide/zinc sulfide (InP/ZnS) QDs are becoming potential alternatives to toxic heavy metal-containing QDs. However, the potential toxicity and, in particular, the immunotoxicity of InP/ZnS QDs are unknown. This study aimed to investigate the impacts of InP/ZnS QDs on inflammatory responses both in vivo and in vitro. Methods: Mice and mouse bone marrow-derived macrophages (BMMs) were exposed to polyethylene glycol (PEG) coated InP/ZnS QDs. The infiltration of neutrophils and the release of interleukin-6 (IL-6) were measured using a hematology analyzer and an enzyme-linked immunosorbent assay (ELISA) for the in vivo test. Cytotoxicity, IL-6 secretion, oxidative stress and endoplasmic reticulum (ER) stress were studied in the BMMs, and then, inhibitors of oxidative stress and ER stress were used to explore the mechanism of the InP/ZnS QDs. Results: We found that 20 mg/kg PEG-InP/ZnS QDs increased the number of neutrophils and the levels of IL-6 in both peritoneal lavage fluids and blood, which indicated acute phase inflammation in the mice. PEG-InP/ZnS QDs also activated the BMMs and increased the production of IL-6. In addition, PEG-InP/ZnS QDs triggered oxidative stress and the ER stress-related PERK-ATF4 pathway in the BMMs. Moreover, the inflammatory response caused by the PEG-InP/ZnS QDs could be attenuated in the macrophages by blocking the oxidative stress or the ER stress with inhibitors. Conclusion: InP/ZnS QDs can activate macrophages and induce acute phase inflammation both in vivo and in vitro, which may be regulated by oxidative stress and ER stress. Our present work is expected to help clarify the biosafety of InP/ZnS QDs and promote their safe application in biomedical and engineering fields.
关键词： indium phosphide,inflammation,endoplasmic reticulum stress,quantum dots,reactive oxygen species
更新于2025-09-16 10:30:52
-
[IEEE 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Fukuoka, Japan (2019.7.7-2019.7.11)] 2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC) - Lossless Scalable Optical Switch Design in a SiP/InP Hybrid Platform
摘要： Lossless and distortion-free experimental operation of an 8×8 SiP/InP hybrid optical switch is demonstrated. The design employs an 8-channel InP gain block added to a SiP switch to compensate for its high insertion loss.
关键词： photonic integrated circuits,optical switches,indium phosphide,silicon photonics,hybrid integrated circuits,Optical interconnects
更新于2025-09-16 10:30:52
-
Opportunities for photonic integrated circuits in optical gas sensors
摘要： In this article, the potential of photonic integrated circuits (PICs) for modern gas sensing applications is discussed. Optical detection systems can be found at the high-end of the currently available gas detectors, and PIC-based optical spectroscopic devices promise a significant reduction in size and cost. The performance of such devices is reviewed here. This discussion is not limited to one semiconductor platform, but includes several available platforms operating from the visible wavelength range up to the long wavelength infrared. The different platforms are evaluated regarding their capabilities in creating a fully integrated spectroscopic setup, including light source, interaction cell and detection unit. Advanced spectroscopy methods are assessed regarding their PIC compatibility. Based on the comparison of PICs with state-of-the-art bulk optical devices, it can be concluded that they can fill the application space of compact and low cost optical gas sensors.
关键词： gas sensing,indium phosphide,spectroscopy,silicon nitride,photonic integrated circuits,silicon photonics
更新于2025-09-16 10:30:52
-
[IEEE 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2019.6.29-2019.7.3)] 2019 20th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Development of Technology Formation of the Optical Waveguide Structures Based on InP by Plasma Etching
摘要： The paper presents the process development results of plasma etching of InP-based structures in inductively coupled plasma in the Cl2/Ar gas mixture with the addition of N2 and O2. Etching was performed on silicon nitride mask. Dependences of process parameters influence on the etching rate, profile and surface roughness of formed elements are shown. Elements of optical waveguide structures were fabricated, using developed etching process.
关键词： indium phosphide,plasma etching,Optoelectronics
更新于2025-09-12 10:27:22
-
Lasing of a Quantum-Cascade Laser with a Thin Upper Cladding
摘要： We present the results of experiments on the fabrication and study of the properties of quantum-cascade lasers of the spectral range of 7–8 μ m in the geometry of a waveguide with a thin top cladding based on indium phosphide. The heterostructure is synthesized by molecular beam epitaxy on an InP substrate with an active region based on a heteropair of In0.53Ga0.47As/Al0.48In0.52As solid alloys. Laser emission at a wavelength of 7.8 μ m at a temperature of 300 K with a threshold current density of ~6 kA/cm2 was achieved. The values of characteristic temperatures T0 and T1 for the studied quantum-cascade lasers are of the order of 150 and 450 K, respectively. The results obtained confirm that the design of the waveguide with a thin top cladding for devices for detecting liquids, the fabrication of microfluidic devices, and photonic circuits on silicon holds promise.
关键词： quantum-cascade laser,indium phosphide,lasing,MBE
更新于2025-09-12 10:27:22
-
Highly Efficient and Bright Inverted Top‐Emitting InP Quantum Dot Light‐Emitting Diodes Introducing a Hole‐Suppressing Interlayer
摘要： InP quantum dots (QDs) based light-emitting diodes (QLEDs) are considered as one of the most promising candidates as a substitute for the environmentally toxic Cd-based QLEDs for future displays. However, the device architecture of InP QLEDs is almost the same as the Cd-based QLEDs even though the properties of Cd-based and InP-based QDs are quite different in their energy levels and shapes. Thus, it is highly required to develop a proper device structure for InP-based QLEDs to improve the efficiency and stability. In this work, efficient, bright, and stable InP/ZnSeS QLEDs based on an inverted top emission QLED (ITQLED) structure by newly introducing a “hole-suppressing interlayer” are demonstrated. The green-emitting ITQLEDs with the hole-suppressing interlayer exhibit a maximum current efficiency of 15.1–21.6 cd A?1 and the maximum luminance of 17 400–38 800 cd m?2, which outperform the recently reported InP-based QLEDs. The operational lifetime is also increased when the hole-suppressing interlayer is adopted. These superb QLED performances originate not only from the enhanced light-outcoupling by the top emission structure but also from the improved electron–hole balance by introducing a hole-suppressing interlayer which can control the hole injection into QDs.
关键词： indium phosphide,top emitting structure,efficiency,quantum dot–based light emitting diodes (QLEDs),hole suppressing interlayer
更新于2025-09-12 10:27:22
-
Studies on the Effect of Acetate Ions on the Optical Properties of InP/ZnSeS Core/Shell Quantum Dots
摘要： The effect of residual acetate ions in indium oleate (In(OA)3) precursor on the photoluminescence quantum yield (PL QY) and size distribution of InP-based core/shell quantum dots (QDs) was studied. For comparison, the synthesis conditions of In(OA)3 were varied to control the amount of acetate ions that remained in the In(OA)3 precursor. The acetate ions resulted in smaller crystallites in single QD and in surfaces with a greater defect concentration, yielding low PL QYs and broader size distributions. For a complete exchange of acetate ligand in indium acetate (In(Ac)3) with oleate, In(Ac)3 was reacted with excess oleic acid. Pure In(OA)3 precursor led to bright InP/ZnSeS core/shell QDs with a uniform size after a shell was formed on the InP core QDs.
关键词： Core/shell,Indium phosphide,Quantum dots,Photoluminescence quantum yields
更新于2025-09-11 14:15:04
-
Effects of Zn <sup>2+</sup> and Ga <sup>3+</sup> doping on the quantum yield of cluster-derived InP quantum dots
摘要： As the commercial display market grows, the demand for low-toxicity, highly emissive, and size-tunable semiconducting nanoparticles has increased. Indium phosphide quantum dots represent a promising solution to these challenges; unfortunately, they typically suffer from low inherent emissivity resulting from charge carrier trapping. Strategies to improve the emissive characteristics of indium phosphide often involve zinc incorporation into or onto the core itself and the fabrication of core/shell heterostructures. InP clusters are high fidelity platforms for studying processes such as cation exchange and surface doping with exogenous ions since these clusters are used as single-source precursors for quantum dot synthesis. Here, we examined the incorporation of zinc and gallium ions in InP clusters and the use of the resultant doped clusters as single-source precursors to emissive heterostructured nanoparticles. Zinc ions were observed to readily react with InP clusters, resulting in partial cation exchange, whereas gallium resisted cluster incorporation. Zinc-doped clusters effectively converted to emissive nanoparticles, with quantum yields strongly correlated with zinc content. On the other hand, gallium-doped clusters failed to demonstrate improvements in quantum dot emission. These results indicate stark differences in the mechanisms associated with aliovalent and isovalent doping and provide insight into the use of doped clusters to make emissive quantum dots.
关键词： Indium phosphide,core/shell heterostructures,quantum yield,gallium doping,quantum dots,zinc doping
更新于2025-09-11 14:15:04