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Silicon ring resonator electro-optical modulator utilizing epsilon-near-zero characteristics of indium tin oxide
摘要： One crucial component in optical communication systems is the optical modulator. It links between the electric and optical domains as it transforms the electric signal into an optical stream. Electro-optical modulation is a very popular scheme. Recently, indium tin oxide (ITO) has been intensively used in optical modulators due to its epsilon-near-zero characteristics. A silicon electro-optic ring resonator modulator is proposed in terms of the outspread application of ITO. An extinction ratio of about 14 dB as well as an insertion loss of 0.075 dB are achieved at a standard telecommunication wavelength of 1.55 microns. The design has low losses, high efficiency, and compact size.
关键词： silicon nanophotonics,ring resonators,indium tin oxide,electro-optical modulators,integrated photonics
更新于2025-09-19 17:13:59
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Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells
摘要： In this article, we report on the properties of indium tin oxide (ITO) deposited on thin-film silicon layers designed for the application as carrier selective contacts for silicon heterojunction (SHJ) solar cells. We find that ITO deposited on hydrogenated nanocrystalline silicon (nc-Si:H) layers presents a significant drop on electron mobility μe in comparison to layers deposited on hydrogenated amorphous silicon films (a-Si:H). The nc-Si:H layers are not only found to exhibit a larger crystallinity than a-Si:H, but are also characterized by a considerably increased surface rms roughness. As we can see from transmission electron microscopy (TEM), this promotes the growth of smaller and fractured features in the initial stages of ITO growth. Furthermore, secondary ion mass spectrometry profiles show different penetration depths of hydrogen from the thin film silicon layers into the ITO, which might both influence ITO and device passivation properties. Comparing ITO to aluminum doped zinc oxide (AZO), we find that AZO can actually exhibit superior properties on nc-Si:H layers. We assess the impact of the modified ITO Rsh on the series resistance Rs of SHJ solar cells with >23% efficiency for optimized devices. This behavior should be considered when designing solar cells with amorphous or nanocrystalline layers as carrier selective contacts.
关键词： secondary ion mass spectrometry (SIMS),indium tin oxide (ITO),series resistance,Aluminum doped zinc oxide (AZO),transparent conductive oxide (TCO),transmission electron microscopy (TEM),silicon heterojunction (SHJ)
更新于2025-09-16 10:30:52
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Effect on the reduction of the barrier height in rear-emitter silicon heterojunction solar cells using Ar plasma-treated ITO film
摘要： In this study, we investigated the effect of plasma treatment on an indium tin oxide (ITO) film under an ambient Ar atmosphere. The sheet resistance of the plasma-treated ITO film at 250 W (37.6 ?/sq) was higher than that of the as-deposited ITO film (34 ?/sq). Plasma treatment was found to decrease the ITO grain size to 21.81 nm, in comparison with the as-deposited ITO (25.49 nm), which resulted in a decrease in the Hall mobility. The work function of the Ar-plasma-treated ITO (WFITO = 4.17 eV) was lower than that of the as-deposited ITO film (WFITO = 5.13 eV). This lower work function was attributed to vacancies that formed in the indium and oxygen vacancies in the bonding structure. Rear-emitter silicon heterojunction (SHJ) solar cells fabricated using the plasma-treated ITO film exhibited an open circuit voltage (VOC) of 734 mV, compared to SHJ cells fabricated using the as-deposited ITO film, which showed a VOC of 704 mV. The increase in VOC could be explained by the decrease in the work function, which is related to the reduction in the barrier height between the ITO and a-Si:H (n) of the rear-emitter SHJ solar cells. Furthermore, the performance of the plasma-treated ITO film was verified, with the front surface field layers, using an AFORS-HET simulation. The current density (JSC) and VOC increased to 39.44 mA/cm2 and 736.8 mV, respectively, while maintaining a WFITO of 3.8 eV. Meanwhile, the efficiency was 22.9% at VOC = 721.5 mV and JSC = 38.55 mA/cm2 for WFITO = 4.4 eV. However, an overall enhancement of 23.75% in the cell efficiency was achieved owing to the low work function value of the ITO film. Ar plasma treatment can be used in transparent conducting oxide applications to improve cell efficiency by controlling the barrier height.
关键词： Work function,Silicon heterojunction solar cell,Transparent conducting oxide,AFORS-HET,Plasma treatment,Indium Tin Oxide
更新于2025-09-16 10:30:52
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Highly efficient flexible organic light-emitting diodes based on a high-temperature durable mica substrate
摘要： Muscovite mica is expected to show great potential in flexible optoelectronics due to its superb temperature tolerance, high transmittance, chemical stability, and mechanical durability. This flexible substrate produces sputtered transparent conducting electrodes (TCEs) with excellent film quality with high transmittance and conductivity. In this study, a designed composite TCE consisting of aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) is proposed to simultaneously maximize flexibility and conductivity. Blue-, green-, and red-emitting flexible organic light-emitting diodes (FOLEDs) using composite TCEs on mica exhibited satisfactory performance with maximum respective electroluminescence efficiencies of 18.1% (38.7 cd/A), 18.7% (66.2 cd/A), and 13.3% (22.2 cd/A). Furthermore, the green-emitting FOLEDs were modified to construct tandem FOLEDs, giving a higher peak efficiency of 27.9% (93.3 cd/A) and saturated green emission. These results can serve as a useful reference for future work on composite TCEs on mica for FOLEDs in display and lighting applications.
关键词： Organic light-emitting diodes (OLEDs),Flexible,Tandem,Indium tin oxide (ITO),Muscovite mica,Aluminum-doped zinc oxide (AZO)
更新于2025-09-16 10:30:52
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Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO <sub/>2</sub> treated by H <sub/>3</sub> PO <sub/>4</sub>
摘要： Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature. The huge EDL specific capacitance is 8.2 mF cm-2 at 20 Hz, and about 0.7 mF cm-2 even at 1 MHz. Both enhancement mode (Vth = 0.15 V) and depletion mode (Vth = -0.26 V) operation are realized by controlling the thickness of the self-assembled ITO semiconducting layer. Electrical characteristics with the equivalent field-effect mobility of 65.4 cm2 V-1 s-1, current on/off ratio of 2 × 106, and subthreshold swing of 80 mV per decade are demonstrated, which are promising for fast-switching and low-power electronics on temperature-sensitive substrates.
关键词： self-assembled,thin-film transistors,H3PO4,microporous SiO2,indium tin oxide,Low-voltage
更新于2025-09-16 10:30:52
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A Lateral MOS-Capacitor Enabled ITO Mach-Zehnder Modulator for Beam Steering
摘要： Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (VπL = 63 V.μm). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field-overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an end-fire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (<3°) and >10 dB suppression of the side lobes, while electrostatically steering the emission profile up to ±80°, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches.
关键词： Electro-optic Modulator,Indium Tin Oxide (ITO),Phased Arrays,LiDAR,Mach Zehnder,Beam Steering
更新于2025-09-16 10:30:52
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Electrochemical performance of indium-tin-oxide-coated lossy-mode resonance optical fiber sensor
摘要： Analysis of liquids performed in multiple domain, e.g., optical and electrochemical (EC), has recently focus significant attention. Our previous works have shown that a simple device based on indium-tin-oxide (ITO) coated optical fiber core may be used for optical monitoring of EC processes. At satisfying optical properties and thickness of ITO a lossy-mode resonance (LMR) effect can be obtained and used for monitoring of optical properties of an analyte in proximity of the ITO surface. However, EC response of the ITO-LMR device to a redox probe has not been achieved for ITO-LMR sensor whereas it is generally observed for commercially available ITO electrodes. The changes in the response to a redox probe are typically used as a sensing parameter when EC label-free sensing is considered, so it is crucial for further development of combined LMR-EC sensing concept. In this work, we focus on enhancing the EC activity of the device by tuning ITO magnetron sputtering deposition parameters. Influence of the deposition pressure on the ITO properties has been the main consideration. Both optical and EC readouts in 0.1 M KCl containing such redox probes as 1 mM of K3[Fe(CN)6] or 1 mM 1,1′-Ferrocenedimethanol were discussed at different scan rate. The performed studies confirm that for optimized ITO properties the ITO-LMR sensor used as the EC electrode may also show excellent EC performance. The observed EC processes are quasi-reversible and diffusion-controlled. Moreover, for the devices, which offer improved EC response, an optical monitoring of the EC process is also possible. According to our best knowledge, fully functional combined optical and EC sensor, where optical effect is resonance-based and other than well-known surface plasmon resonance, is presented for the first time.
关键词： Electrochemical properties,Cyclic voltammetry,Optical properties,Lossy-mode resonance,Optical fiber sensor,Indium tin oxide,Magnetron sputtering
更新于2025-09-16 10:30:52
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Construction of Effective Polymer Solar Cell Using 1,7-Disubstituted Perylene Diimide Derivatives as Electron Transport Layer
摘要： The poor compatibility of an inorganic electron transport layer with the active layer and an ultrathin film organic material becomes a great obstacle in producing high-quality polymer solar cells with high-throughput roll-to-roll (R2R) method. Novel effective polymer solar cells had been fabricated by introducing 1, 7-disubstituted perylene diimide derivatives PDIH, PDIC, and PDIN as an electron transporting layer. It was noteworthy that PDIN could obviously improve the power conversion efficiency of solar cells that incorporated a photoactive layer composed of poly[(3-hexylthiophene)-2, 5-diyl] (P3HT) and the fullerene acceptor [6, 6-phenyl-C71-butyric acid methyl ester] (PC71BM). The power conversion efficiency varies from 1.5% for ZnO transparent cathode-based solar cells to 2.1% for PDIN-based electron transport layer-free solar cells. This improved performance could be attributed to the following reasons: the interaction between N atom in PDIN and O atom in indium tin oxide (ITO) reduced the work function of ITO, increased the built-in electric field, and thus lowered the electron transport barrier and improved the electron extraction ability of cathode, the appropriate roughness of the active layer increased the contact area with anode interfacial layer and enhanced the hole transport efficiency. These experimental results revealed that PDIN can be a promising novel effective material with a simplified synthesis process and lower cost as an electron transporting layer.
关键词： polymer solar cells,electron transport layer,perylene diimide derivatives,indium tin oxide,power conversion efficiency
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Non-Volatile Indium Tin Oxide Electro-Optic Switch
摘要： The abstract of the paper is not provided in the given text.
关键词： silicon photonics,electro-optic switch,indium tin oxide,non-volatile
更新于2025-09-12 10:27:22
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The role of NaF post-deposition treatment on the photovoltaic characteristics of semitransparent ultrathin Cu(In,Ga)Se <sub/>2</sub> solar cells prepared on indium-tin-oxide back contacts: a comparative study
摘要： Cu(In,Ga)Se2 (CIGSe) solar cells with absorber thicknesses of <500 nm are important for lowering the cost of photovoltaic (PV)-generated electricity. Moreover, ultrathin bifacial CIGSe solar cells can be prepared on indium-tin-oxide (ITO) back contacts (BCs). In contrast to Mo BCs, ITO BCs suppress the di?usion of Na from soda-lime glass (SLG) to the CIGSe absorber. Na present in the absorber is supposed to ameliorate the PV properties of CIGSe solar cells, but in the absence of Na or when the Na concentration is extremely low, the PV performance is expected to be poor. In this study, a NaF post-deposition treatment (PDT) was applied to a <500 nm thick semitrasparent CIGS absorber prepared by a 1-stage co-evaporation process. A detailed comparison is made between the CIGSe solar cell that underwent the NaF PDT (C–Na) and a reference CIGSe solar cell in which no Na was supplied from an external source (C0). All the PV parameters (i.e., the open-circuit voltage, short-circuit current density, ?ll factor, and e?ciency) of C–Na considerably improved compared with those of C0. To understand the factors that led to this improvement, the solar cells are analyzed by various characterization techniques, including JV measurements, external quantum e?ciency measurements, temperature-dependent measurements of the open-circuit voltage, capacitance–voltage measurements, drive level capacitance pro?lometry, and admittance spectroscopy. Furthermore, the reaction occurring at the CIGSe/ITO interface is investigated with transmission electron microscopy, and the implications of this reaction on the device performance are discussed.
关键词： ultrathin,solar cells,semitransparent,indium-tin-oxide back contacts,NaF post-deposition treatment,Cu(In,Ga)Se2,photovoltaic characteristics
更新于2025-09-11 14:15:04