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oe1(光电查) - 科学论文

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出版时间
  • 2019
研究主题
  • solution deposition
  • printable electronic transport layer
  • multilayer OLEDs
  • fully inkjet printed
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
  • Peking University
75 条数据
?? 中文（中国） ▾

  • Direct Patterning of Piezoelectric Thin Films by Inkjet Printing

    摘要： Inkjet printing is currently gaining momentum as a low-cost and eco-friendly additive manufacturing technique for electronics. Patterning of functional metal oxide thin films on high surface energy substrates via inkjet printing remains a challenge and requires assistance from lithographic processes. This work unveils a novel process for lithography and etching-free patterning of lead zirconate titanate (PZT) films on pristine platinized silicon through the use of inkjet-printed alkanethiolate-based templates. The technique requires neither lithography nor etching, respectively, before and after PZT printing. The described process allows for feature sizes in the sub-100 μm range with control over the thickness of the final film. Inkjet-printed PZT displays typical ferroelectric and piezoelectric properties of solution-derived thin films, with remnant polarization 13 μC cm?2, coercive field 58 kV cm?1, permittivity 900, dielectric losses 0.07, and effective longitudinal piezoelectric coefficient 50 pm V?1.

    关键词： piezoelectrics,lead zirconate titanate,inkjet printing,patterning,self-assembled monolayers

    更新于2025-09-23 15:21:01

  • [IEEE 2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC) - Honolulu, HI, USA (2018.7.18-2018.7.21)] 2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC) - Inkjet Printed Parallel Plate Capacitors Using PVP Polymer Dielectric Ink on Flexible Polyimide Substrates

    摘要： Inkjet printing (IJP) is an exciting new additive manufacturing technology that promises monolithic electronic circuit fabrication of μm thin low-cost large-area electronic low-cost body-worn flexible sensors. In this work, we demonstrate inkjet printed multilayer metal-dielectric-metal capacitors on flexible polyimide (PI) substrate by formulating a custom dielectric ink based on Poly 4-vinylphenol (PVP). Silver nanoparticle ink was used for printing the conductive parallel metal plates. We also demonstrate control over the capacitance values by varying the design parameters and succeeded in printing capacitors in the range 8.8 pF to 467 pF, with excellent repeatability on flexible PI substrates. A functional LC circuit using these printed capacitors has been designed and demonstrated to have a resonance frequency of 24.3 MHz. These results are a vital step forward towards monolithic printing of flexible electronic circuits using IJP technique for many applications such as body-worn sensors.

    关键词： Inkjet printing,PVP dielectric ink,flexible electronics,polyimide substrate,capacitors

    更新于2025-09-23 15:21:01

  • Nano-to-Microporous Networks via Inkjet Printing of ZnO Nanoparticles/Graphene Hybrid for Ultraviolet Photodetectors

    摘要： Inkjet-printed photodetectors have gained enormous attention over the last decade. However, device performance is limited without post-processing, such as annealing and UV exposure. In addition, it is difficult to manipulate the surface morphology of the printed film using an inkjet printer due to the limited options of low viscosity ink solutions. Here, we employ a concept involving the control of the inkjet-printed film morphology via modulation of co-solvent vapor pressure and surface tension for the creation of a high-performance ZnO-based photodetector on a flexible substrate. The solvent boiling point across different co-solvent systems is found to affect the film morphology, which results in not only distinct photo-response time but also photo-detectivity. ZnO-based photodetectors were printed using different solvents which display a fast photo-response in low-boiling point solvents due to the low carbon residue and larger photo-detectivity in high-boiling point solvent systems due to the porous structure. The porous structure is obtained using both gas-liquid surface tension differences and solid-liquid surface differences, and the size of porosity is modulated from nano-size to micro-size depending on the ratio between two solvents or two nanomaterials. Moreover, the conductive nature of graphene enhances the transport behavior of the photocarrier, which enables a high-performance photodetector with high photo-responsivity (7.5*102 AW-1) and fast photo-response (0.18 s) to be achieved without the use of high-boiling point solvents.

    关键词： Inkjet print,photodetector,ZnO nanoparticle (NP),flexible devices,microporous

    更新于2025-09-23 15:19:57

  • Surface Engineered Colloidal Quantum Dots Toward Complete Green Process

    摘要： The rising demand for eradicating hazardous substances in the workplace has motivated vigorous researches on environmentally-sustainable manufacturing processes of colloidal quantum dots (QDs) for their optoelectronic applications. Despite remarkable achievements witnessed in QD materials (e.g., Pb- or Cd-free QDs), the progress in the eco-friendly process is far falling behind and thus the practical use of QDs. Herein, a complete “green” process of QDs, which excludes environmentally unfriendly elements from QDs, ligands, or solvents, is presented. The implant of mono-2-(methacryloyloxy)ethyl succinate (MMES) ligands renders InP/ZnSexS1-x QDs dispersed in eco-friendly polar solvents that are widely accepted in the industry while keeping photophysical properties of QDs unchanged. The MMES-capped QDs show exceptional colloidal stabilities in a range of green polar solvents that permit uniform inkjet printing of QD dispersion. In addition, MMES-capped QDs are also compatible with commercially available photo-patternable resins, and the cross-linkable moiety within MMES further facilitates the achievement in the formation of well-defined, micrometer-scale patterning of QD optical films. The presented materials, all composed of simple, scalable, and environmentally-safe compounds, promise low environmental impact during the processing of QDs, and thus will catalyze the practicable use of QDs in a variety of optoelectronic devices.

    关键词： photo-patterning,electroluminescence devices,environmentally friendly processing,inkjet printing,quantum dots

    更新于2025-09-23 15:19:57

  • Efficient inkjet-printed blue OLED with boosted charge transport using host doping for application in pixelated display

    摘要： Inkjet-printing is a desirable technology for organic light emitting diodes (OLEDs) owing to its compatibility with large-area low-cost full-color pixelated displays. In this work, we proposed a strategy to fabricate highly efficient inkjet-printed blue OLEDs by introducing 3,5-bis(N-car-bazolyl)benzene (mCP) as the host material into organic light emitting layers. By carefully tailoring the weight ratio of mCP to poly[(9,9-dioctyl-2,7-fluorene)-co-(dibenzothiophene-S,S-dioxide)] (PFSO), the device demonstrated superior charge transport capability, leading to balanced charge transport and optimized efficiency. Furthermore, in combination with modifying the mCP: PFSO ink formulation, a low-roughness organic emissive film on Poly(ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) layer was achieved. The performance of the inkjet-printed device has been significantly improved with nearly five times, which exhibits a maximum luminance and an external quantum efficiency of 3743 cd/m2 and 5.03%, respectively. The icing on the cake is that we fabricated a 3-inch blue OLED array device successfully with a brightness uniformity of 92.7%, which shows promising potential in realizing simple structure large-area and high-efficient OLEDs by inkjet printing.

    关键词： Blue,Organic light emitting diodes,Charge transport,Inkjet-printing

    更新于2025-09-23 15:19:57

  • Inkjet-Printed Organohalide 2D Layered Perovskites for High-Speed Photodetectors on Flexible Polyimide Substrates

    摘要： The synthesis of solution-processed two-dimensional organohalide layered (CH3(CH2)3NH3)2(CH3NH3)n?1PbnI3n+1 (n = 2, 3, and 4) perovskites is presented, where inkjet printing was used to fabricate heterostructure flexible photodetector (PD) devices on polyimide (PI) substrates. Inks for the n = 4 formulation were developed to inkjet-print PD devices that were photoresponsive to broadband incoming radiation in the visible regime, where the peak photoresponsivity R was calculated to be ～0.17 A/W, which is higher compared to prior reports, while the detectivity D was measured to be ～3.7 × 1012 Jones at a low light intensity F ≈ 0.6 mW/cm2. The ON/OFF ratio was also high (～2.3 × 103), while the response time τ on the rising and falling edges was measured to be τ ≈ 24 ms and τ ≈ 65 ms, respectively. Our strain-dependent measurements, conducted here for the first time for inkjet-printed perovskite PDs, revealed that the Ip decreased by only ～27% with bending (radius of curvature of ～0.262 cm?1). This work demonstrates the tremendous potential of the inkjet-printed, composition-tunable, organohalide 2D perovskite heterostructures for high-performance PDs, where the techniques are readily translatable toward flexible solar cell platforms as well.

    关键词： organohalide 2D perovskites,flexible photodetector,inkjet printing,photoluminescence spectroscopy,strain dependency

    更新于2025-09-23 15:19:57

  • Microstructural investigation of inkjet printed Cu(In,Ga)Se2 thin film solar cell with improved efficiency

    摘要： Inkjet printed copper indium gallium diselenide (CIGS) thin film solar cell has attracted tremendous attention because of its various technological benefits as a non-vacuum process. Focused efforts in selenization of inkjet printed films to make the process feasible, are desired. In this work, microstructural investigation of inkjet printed precursor film selenized by rapid thermal processing (RTP) is presented. The optimization of selenization time for transforming metal nitrates precursor ink to CIGS thin film is investigated. Based on the results, the growth mechanism to form CIGS from inkjet printed CIG precursor films is proposed. Systematic study on the molybdenum diselenide (MoSe2) phase evolution during the two-step atmospheric pressure selenization process at the CIGS-Mo interface and its effect on device performance are carried out. Non-uniform inter-diffusion of indium (In) and gallium (Ga) during selenization, resulting in double-layered CIGS, one of the major reason limiting the performance of the devices is investigated through XRD, Raman, FESEM, EDS and Mott-Schottky analysis. The significant improvement in device efficiency from 0.4% to 4.2% is achieved due to microstructural improvement in CIGS films. Investigation on the mechanism of microstructural growth with selenization time affecting final device performance is presenting in this work.

    关键词： CIGS,Rapid thermal processing,Microstructural growth,Inkjet printing,Atmospheric pressure selenization

    更新于2025-09-23 15:19:57

  • Realizing 22.3% EQE and 7-Fold Lifetime Enhancement in QLED: via Blending Polymer TFB and Cross-linkable Small Molecule for Solvent-Resistant Hole Transport Layer

    摘要： Poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt(4,4'-(N-(4-butylphenyl))] (TFB) has been widely used as a hole transport layer (HTL) material in cadmium-based quantum dots light-emitting diodes (QLEDs) due to its high hole mobility. However, as the highest occupied molecular orbital (HOMO) energy level of TFB is -5.4 eV, the hole injection from TFB to quantum dots (QDs) layer is higher than 1.5 eV. Such high oxidation potential at the QD/HTL interface may seriously degrade the device lifetime. In addition, TFB is not resistant to most solvents, which limits its application in inkjet-printed QLEDs display. In this study, blended HTL consisting of TFB and cross-linkable small molecular 4,4 ′ -bis(3-vinyl-9H-carbazol-9-yl)1,1 ′ -biphenyl (CBP-V) was introduced into red QLEDs, because of the deep HOMO energy level of CBP-V (-6.2 eV). Compared with the TFB only devices, the external quantum efficiency (EQE) of devices with blended HTL improved from 15.9 % to 22.3 % without the increase of turn-on voltage for spin-coating fabricated device. Furthermore, the blended HTL prolonged the T90 and T70 lifetime from 5.4 h and 31.1 h to 39.4 h and 148.9 h, respectively. These enhancements in lifetime are attributed to the low hole-injection barrier at HTL/QD interface and high thermal stability of blended HTL after crosslinking. Moreover, the crosslinked blended HTL showed excellent solvent resistance after cross-linking and the EQE of the inkjet-printed red QLEDs reached 16.9 %.

    关键词： charge balance,quantum dots light-emitting diodes,blended HTL,solvent resistance,inkjet printing

    更新于2025-09-23 15:19:57

  • Fluorescent patterns by Selective Grafting of a Telechelic Polymer

    摘要： The preparation of patterned ultrathin films (sub-10 nm) composed of end-anchored fluorescently-labeled poly(methyl methacrylate) (PMMA) is presented. Telechelic PMMA was synthesized utilizing activator regenerated by electron transfer atom transfer radical polymerization (ARGET ATRP) and consecutively end-functionalized with alkynylated fluorescein by Cu-catalyzed azide-alkyne cycloaddition (CuAAC) 'click' chemistry. The polymers were grafted via the α-carboxyl groups to silica or glass substrates pre-treated with (3-aminopropyl)triethoxysilane (APTES). Patterned surfaces were prepared by inkjet printing of APTES onto glass substrates and selectively grafted with fluorescently end-labeled PMMA to obtain emissive arrays on the surface.

    关键词： ATRP,inkjet printing,click chemistry,grafting to,polymer brushes

    更新于2025-09-19 17:15:36

  • Comparison of spin-on-glass and WO <sub/>3</sub> as an insulating layer for printed resistive memory devices

    摘要： Resistive Random Access Memory (ReRAM) is a highly promising technology for various future memory applications. In this work, spin-on-glass (SOG) and WO3 nanoparticles are used as an insulating layer for completely inkjet-printed ReRAM cells. The direct comparison shows that the di?erence in switching parameters can be used to serve di?erent device requirements for various applications. While local ?lament formation with conductive atomic force microscopy con?rms the same switching mechanism for both compounds, the current–voltage characteristics di?er from each other. SOG as excellent insulator shows an OFF resistance in the range of GΩ and is therefore highly suitable for multi-bit data storage to increase memory density. ReRAM cells with WO3 face larger leakage currents and show a low degree of multi-bit data storage. However, WO3 can be used to fabricate completely sinter-free memory devices for applications which do not allow high temperatures in the fabrication process.

    关键词： spin-on-glass,?exible electronics,printed electronics,organic electronics,inkjet printing,ReRAM

    更新于2025-09-19 17:15:36